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Journal Articles

Crystallization of an amorphous layer in P$$^{+}$$-implanted 6H-SiC studied by monoenergetic positron beams

Uedono, Akira*; Tanigawa, Shoichiro*; Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; Frank, T.*; Pensl, G.*; Suzuki, Ryoichi*; Odaira, Toshiyuki*; et al.

Journal of Applied Physics, 87(9), p.4119 - 4125, 2000/05

 Times Cited Count:12 Percentile:49.35(Physics, Applied)

no abstracts in English

Journal Articles

Relationship between donor activation and defect annealing in 6H-SiC hot-implanted with phosphrous ions

Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Yoshikawa, Masahito; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu; Abe, Koji*; Tanigawa, Shoichiro*; Frank, T.*; et al.

Materials Science Forum, 338-342, p.857 - 860, 2000/00

no abstracts in English

Journal Articles

Study of residual defects in ion-implanted and subsequently annealed 3C-SiC

Oshima, Takeshi; Ito, Hisayoshi; Uedono, Akira*; Suzuki, Ryoichi*; Ishida, Yuki*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Kojima, Kazutoshi; Odaira, Toshiyuki*; Nashiyama, Isamu; et al.

Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.469 - 476, 1999/00

no abstracts in English

Journal Articles

Characterization of point defects in cubic silicon carbide using positron annihilation

Ito, Hisayoshi; Kawasuso, Atsuo; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okada, Sohei; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*

Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.23 - 29, 1999/00

no abstracts in English

Journal Articles

Oxygen-related defects in O$$^{+}$$-implanted 6H-SiC studied by monoenergetic positron beams

Uedono, Akira*; Tanigawa, Shoichiro*; Oshima, Takeshi; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu

Journal of Applied Physics, 86(10), p.5392 - 5398, 1999/00

 Times Cited Count:10 Percentile:46.04(Physics, Applied)

no abstracts in English

Journal Articles

Annealing behaviours of defects in electron-irradiated diamond probed by positron annihilation

Uedono, Akira*; *; Morishita, Norio; Ito, Hisayoshi; Tanigawa, Shoichiro*; Fujii, Satoshi*; *

Journal of Physics; Condensed Matter, 11(25), p.4925 - 4934, 1999/00

 Times Cited Count:12 Percentile:57.1(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Defects in synthesized and natural diamond probed by positron annihilation

Uedono, Akira*; Fujii, Satoshi*; Morishita, Norio; Ito, Hisayoshi; Tanigawa, Shoichiro*; *

Journal of Physics; Condensed Matter, 11(20), p.4109 - 4122, 1999/00

 Times Cited Count:8 Percentile:45.7(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Investigation of positron moderator materials for electron-linac-based slow positron beamlines

Suzuki, Ryoichi*; *; Uedono, Akira*; Y.K.Cho*; Yoshida, Sadafumi*; Ishida, Yuki*; Oshima, Takeshi; Ito, Hisayoshi; *; Mikado, Tomohisa*; et al.

Japanese Journal of Applied Physics, Part 1, 37(8), p.4636 - 4643, 1998/08

 Times Cited Count:28 Percentile:74.45(Physics, Applied)

no abstracts in English

Journal Articles

Investigation of vacancy-type defects in P$$^{+}$$-implanted 6H-SiC using monoenergetic positron beams

Uedono, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Suzuki, Ryoichi*; *; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*

Japanese Journal of Applied Physics, Part 1, 37(5A), p.2422 - 2429, 1998/05

 Times Cited Count:13 Percentile:53.63(Physics, Applied)

no abstracts in English

Journal Articles

Characterization of vacancy-type defects and phosphorus donors introduced in 6H-SiC by ion implantation

Oshima, Takeshi; Uedono, Akira*; Abe, Koji*; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Tanigawa, Shoichiro*; Nashiyama, Isamu

Applied Physics A, 67(4), p.407 - 412, 1998/00

 Times Cited Count:26 Percentile:72.59(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Study of thermal annealing of vacancies in ion implanted 3C-SiC by positron annihilation

Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Abe, Koji*; Suzuki, Ryoichi*; *; Aoki, Yasushi; Tanigawa, Shoichiro*; Yoshikawa, Masahito; Mikado, Tomohisa*; et al.

Mater. Sci. Forum, 264-268, p.745 - 748, 1998/00

no abstracts in English

Journal Articles

Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Abe, Koji*; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; Uedono, Akira*; Tanigawa, Shoichiro*

Journal of Applied Physics, 82(11), p.5339 - 5347, 1997/12

 Times Cited Count:13 Percentile:57.48(Physics, Applied)

no abstracts in English

Journal Articles

Annealing properties of defects in ion-implanted 3C-SiC studied using monoenergetic positron beams

Uedono, Akira*; Ito, Hisayoshi; Oshima, Takeshi; Suzuki, Ryoichi*; *; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*; et al.

Japanese Journal of Applied Physics, Part 1, 36(11), p.6650 - 6660, 1997/11

 Times Cited Count:16 Percentile:63.34(Physics, Applied)

no abstracts in English

Journal Articles

Positron annihilation studies of defects in 3C-SiC hot-implanted with nitrogen and aluminum ions

Ito, Hisayoshi; Uedono, Akira*; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*

Applied Physics A, 65(3), p.315 - 323, 1997/00

 Times Cited Count:16 Percentile:63.34(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Intrinsic defects in cubic silicon carbide

Ito, Hisayoshi; Kawasuso, Atsuo; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Tanigawa, Shoichiro*; *; Okumura, Hajime*; Yoshida, Sadafumi*

Physica Status Solidi (A), 162, p.173 - 198, 1997/00

 Times Cited Count:132 Percentile:97.83(Materials Science, Multidisciplinary)

no abstracts in English

15 (Records 1-15 displayed on this page)
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