Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Abderrahmane, A.*; Takahashi, Hiroki*; Tashiro, Tatsuya*; Ko, P. J.*; Okada, Hiroshi*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*
AIP Conference Proceedings 1585, p.123 - 127, 2014/02
Times Cited Count：1 Percentile：51.08(Physics, Applied)The effect of annealing at 673 K on irradiated micro-Hall sensors irradiated with protons at 380 keV and fluences of 1
cm
, 1
cm, 1
cm is reported. Cathodoluminescence measurements were carried out at room temperature before and after annealing and showed improvement in the band edge band emission of the GaN layer. After annealing a sensor irradiated by 1 cm the device became operational with improvements in its magnetic sensitivity. All irradiated sensors showed improvement in their electrical characteristics after annealing.
Abderrahmane, A.*; Tashiro, Tatsuya*; Takahashi, Hiroki*; Ko, P. J.*; Okada, Hiroshi*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*
Applied Physics Letters, 104(2), p.023508_1 - 023508_4, 2014/01
Times Cited Count：6 Percentile：26.85(Physics, Applied)The effect of annealing on the magnetoelectrical properties of proton-irradiated micro-Hall sensors at an energy of 380 keV and very high proton fluences was studied. Recovery of the electron mobility and a decrease in the sheet resistance of the annealed micro-Hall sensors, as well as an enhancement in their magnetic sensitivity were reported. Trap removal and an improvement in the crystal quality by removing defects were confirmed through current-voltage measurements and Raman spectroscopy, respectively.
