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Journal Articles

Hydrothermal-method-grown ZnO single crystal as fast EUV scintillator for future lithography

Nakazato, Tomoharu*; Furukawa, Yusuke*; Tanaka, Momoko; Tatsumi, Toshihiro*; Nishikino, Masaharu; Yamatani, Hiroshi*; Nagashima, Keisuke; Kimura, Toyoaki*; Murakami, Hidetoshi*; Saito, Shigeki*; et al.

Journal of Crystal Growth, 311(3), p.875 - 877, 2009/01

 Times Cited Count:24 Percentile:87.06(Crystallography)

The temperature dependence of scintillation properties of a hydrothermal-method-grown zinc oxide (ZnO) emission is investigated using a nickel-like silver laser emitting at 13.9 nm. A broad peak at 386 nm with a full-width at half-maximum (FWHM) of 15 nm at room temperature (298 K) is obtained. The peak position tends to be blue shifted while the FWHM becomes narrower when the crystal temperature is decreased to 25 K. Streak images fitted by a double exponential decay reveal that the measured emission decay at 105 K was $$tau$$$$_{1}$$ = 0.88 ns and $$tau$$$$_{2}$$ = 2.7 ns. This decay time of a few nanoseconds is suitable for lithographic applications and is sufficiently short for the characterization of laser plasma extreme ultraviolet (EUV) sources with nanosecond durations.

Journal Articles

Time-resolved fluorescence spectrum of wide-gap semiconductors excited by 13.9 nm X-ray laser

Tanaka, Momoko; Furukawa, Yusuke*; Nakazato, Tomoharu*; Tatsumi, Toshihiro*; Murakami, Hidetoshi*; Shimizu, Toshihiko*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Kawachi, Tetsuya; Kagamitani, Yuji*; et al.

X-Ray Lasers 2008; Springer Proceedings in Physics Series, Vol.130, p.501 - 505, 2009/00

We measured the time-resolved fluorescence spectra of ZnO and GaN single crystals excited by an X-ray laser operating at 13.9 nm and evaluated their scintillation properties for EUV excitation as compared with UV excitation case. For ZnO, a clear fluorescence peak of excitonic origin was observed at around 380 nm and the decay lifetime of less than 3 ns is found to be almost similar to the UV excitation case. The fluorescence at 380 nm is ideal for scintillator device design in the EUV and further applications. For GaN, the lifetimes are much longer than ZnO and the temporal profile of the EUV-excited fluorescence differs with the UV excitation case. As such, the EUV scintillation properties of ZnO is said to be more favorable than GaN. Finally, it is also demonstrated that an X-ray laser is an excellent tool for spectroscopic characterization of materials intended for next-generation lithography applications.

Journal Articles

Temperature dependence of scintillation properties for a hydrothermal-method-grown zinc oxide crystal evaluated by nickel-like silver laser pulses

Furukawa, Yusuke*; Tanaka, Momoko; Nakazato, Tomoharu*; Tatsumi, Toshihiro*; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; Kimura, Toyoaki; Murakami, Hidetoshi*; Saito, Shigeki*; et al.

Journal of the Optical Society of America B, 25(7), p.B118 - B121, 2008/07

 Times Cited Count:24 Percentile:74.95(Optics)

Using EUV laser operated at 13.9 nm ZnO and GaN are shown to be excellent scintillators in this wavelength region. Especially ZnO has short response time of 3 ns and prominent peak fluorescence from excitation at 380 nm.

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