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Tanaka, Takuro*; Fukuoka, Masafumi*; Toda, Kanako*; Nakanishi, Takahiro; Terashima, Motoki; Fujiwara, Kenso; Niwano, Yuma*; Kato, Hiroaki*; Kobayashi, Natsuko*; Tanoi, Keitaro*; et al.
ACS ES&T Water (Internet), 4(8), p.3579 - 3586, 2024/08
Nozaki, Mikito*; Terashima, Daiki*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
Japanese Journal of Applied Physics, 59(SM), p.SMMA07_1 - SMMA07_7, 2020/07
Times Cited Count:5 Percentile:23.41(Physics, Applied)AlGaN/GaN metal-oxide-semiconductor (MOS) structures were fabricated by low-power inductively coupled plasma reactive ion etching and chemical vapor deposition of SiO
dielectrics on the etched surfaces, and they were systematically investigated by physical and electrical characterizations in an effort to develop a low-damage recessed gate process. The comprehensive research demonstrates the significant advantages of the proposed low-damage recessed gate process for fabricating next-generation AlGaN/GaN MOS-HFET devices.
/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistorsWatanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.
Japanese Journal of Applied Physics, 57(6S3), p.06KA03_1 - 06KA03_6, 2018/06
Times Cited Count:12 Percentile:45.23(Physics, Applied)The advantage of SiO
/AlON stacked gate dielectrics over SiO
, AlON and Al
O
single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.
Saito, Takumi*; Aoyagi, Noboru; Terashima, Motoki
Journal of Nuclear Science and Technology, 54(4), p.444 - 451, 2017/04
Times Cited Count:7 Percentile:50.10(Nuclear Science & Technology)Humic substances (HSs) are ubiquitous in various environments including deep underground and play an important role in the speciation and mobility of radionuclides. The binding of Eu
, a chemical homologue of trivalent actinide ions, to HSs isolated from sedimentary groundwater at -250 m below the surface was studied by time-resolved laser fluorescence spectroscopy combined with parallel factor analysis (PARAFAC) as a function of pH and salt concentration. PARAFAC modeling reveals the presence of multiple factors that corresponds to different Eu
species. These factors resemble those observed for Eu
binding to HSs from surface environments; however, detailed comparison shows that there are some particularities in Eu
binding to the deep groundwater HSs. The distribution coefficients (
) of Eu
binding to the HSs calculated from the PARAFAC modeling exhibits a rather strong salt effect. At 0.01 M NaClO
the
values are relatively large and comparable to those to the surface HSs; they are decreaed at 0.1 M NaClO
by more than an order of the magnitude. The
values are larger for humic acid fraction of the deep underground HSs than fulvic acid over the entire range of pH and salt concentration investigated in this study.
-YbAlB
at high magnetic fieldsTerashima, Taku*; Matsuda, Yasuhiro*; Kuga, Kentaro*; Suzuki, Shintaro*; Matsumoto, Yosuke*; Nakatsuji, Satoru*; Kondo, Akihiro*; Kindo, Koichi*; Kawamura, Naomi*; Mizumaki, Masaichiro*; et al.
Journal of the Physical Society of Japan, 84(11), p.114715_1 - 114715_4, 2015/11
Times Cited Count:4 Percentile:32.47(Physics, Multidisciplinary)Saito, Takumi; Terashima, Motoki; Aoyagi, Noboru; Nagao, Seiya*; Fujitake, Nobuhide*; Onuki, Toshihiko
Environmental Science; Processes & Impacts, 17(8), p.1386 - 1395, 2015/08
Times Cited Count:9 Percentile:29.33(Chemistry, Analytical)The deep groundwater HSs were different from surface HSs, having high aliphaticities, sulfur contents, and small molecular sizes. The amounts of their acidic functional groups were comparable to or slightly larger than those of surface HSs; however, the magnitude of Cu
binding to the deep groundwater HSs was smaller. The NICA-Donnan model attributed this to the binding of Cu
to chemically homogeneous carboxylic-type sites via mono-dentate coordination at relatively low pH. The binding mode tended to shift to multi-dentate coordination with carboxylic-type and probably more heterogeneous alcoholic hydroxide-type groups at higher pH. This study shows the particularity of the deep groundwater HSs in terms of their physicochemical and ion-binding properties, compared with surface HSs.
-YbAl
Fe
B
(
) at low temperatures and high magnetic fieldsTerashima, Taku*; Matsuda, Yasuhiro*; Kuga, Kentaro*; Suzuki, Shintaro*; Matsumoto, Yosuke*; Nakatsuji, Satoru*; Kondo, Akihiro*; Kindo, Koichi*; Kawamura, Naomi*; Mizumaki, Masaichiro*; et al.
Journal of Physics; Conference Series, 592(1), p.012020_1 - 012020_6, 2015/03
Times Cited Count:1 Percentile:41.18(Physics, Atomic, Molecular & Chemical)Valence fluctuation phenomena in rare-earth intermetallic compounds have attracted attention because the quantum criticality of the valence transition has been proposed theoretically. Recently, it was found that
-YbAlB
shows quantum criticality without tuning and has a strong mixed-valence state. In this study, we measured the magnetization curve and X-ray magnetoabsorption in
-YbAl
Fe
B
(
), which is a locally isostructural polymorph of
-YbAlB
. The magnetization and X-ray experiments were performed in fields up to 55 and 40 T, respectively. A small increase in the Yb valence was observed at fields where the magnetization curve exhibited a change in slope.
Amano, Yuki; Amamiya, Hiroki; Murakami, Hiroaki; Iwatsuki, Teruki; Terashima, Motoki; Mizuno, Takashi; Kirishima, Akira*; Kuno, Atsushi*; Sasaki, Takayuki*; Kubota, Takumi*; et al.
no journal, ,
no abstracts in English
Terashima, Motoki; Saito, Takumi*; Iijima, Kazuki; Yoshikawa, Hideki
no journal, ,
no abstracts in English
Terashima, Motoki; Saito, Takumi; Ishii, Tomoko*; Akagi, Yosuke*; Tachi, Yukio
no journal, ,
no abstracts in English
Terashima, Motoki; Saito, Takumi*; Ito, Miki*; Akagi, Yosuke*; Tachi, Yukio
no journal, ,
no abstracts in English
binding by dissolved organic matters in groundwaterTerashima, Motoki; Saito, Takumi*; Akagi, Yosuke*; Endo, Takashi*
no journal, ,
no abstracts in English
Cs in Fukushima rivers by diffusive gradients in thin films (DGT), 3; Relations between geochemical parametersTanaka, Takuro*; Saito, Takumi*; Toda, Kanako*; Fujiwara, Kenso; Terashima, Motoki; Nakanishi, Takahiro; Kobayashi, Natsuko*; Tanoi, Keitaro*; Kato, Hiroaki*
no journal, ,
Cs dispersed by the Fukushima Daiichi Nuclear Power Plant accident deposited in Fukushima area, that are not decontaminated in mountainous areas, may migrate through river water to animals and plants. Most of
Cs in river are fixed in clay minerals, but there are some Cs that can be easily desorbed, named as labile components. It has been suggested that labile components affect the bioavailability of
Cs. In this study, the labile
Cs was sampled in situ from upstream to downstream in several rivers of Fukushima using a passive sampler called diffusive gradients in thin films (DGT). The desorption behavior of the labile component and factors affecting it will be discussed by examining the relationship with particulate
Cs and geochemical parameters in river water.
Terashima, Motoki; Tachi, Yukio; Saito, Takumi*; Iijima, Kazuki; Shimoda, Satoko*; Nakazawa, Toshiyuki*; Yoshikawa, Hideki
no journal, ,
no abstracts in English
Terashima, Motoki; Saito, Takumi*; Okazaki, Mitsuhiro*; Tachi, Yukio; Iijima, Kazuki
no journal, ,
no abstracts in English
Saito, Takumi; Terashima, Motoki
no journal, ,
no abstracts in English
Kimuro, Shingo*; Kirishima, Akira*; Akiyama, Daisuke*; Sato, Nobuaki*; Nagao, Seiya*; Saito, Takumi*; Amano, Yuki; Miyakawa, Kazuya; Terashima, Motoki
no journal, ,
no abstracts in English
/AlON stacked gate dielectrics for AlGaN/GaN MOS-HFETWatanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.
no journal, ,
The advantage of SiO
/AlON stacked gate dielectrics over SiO
, AlON and Al
O
single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.
Koarai, Kazuma; Matsueda, Makoto; Aoki, Jo; Yanagisawa, Kayo*; Fujiwara, Kenso; Terashima, Motoki; Kino, Yasushi*; Oka, Toshitaka; Okutsu, Kenichi*; Yamashita, Takuma*; et al.
no journal, ,
We demonstrated a method of
Sr measurement in small pieces of hard tissues with radioactivity measurement or ICP-MS measurement. Interference elements of the measurements were removed by chemical separation. We could determine
Sr in 0.1 g of hard tissues by radioactivity measurement method and ICP-MS method. Limit of detection of the ICP-MS method was lower than that of the radioactivity measurement. The ICP-MS method is adequate method for distribution analysis of
Sr in the hard tissues.
Murakami, Masao*; Demizu, Yusuke*; Niwa, Yasue*; Nagayama, Shinichi*; Maeda, Takuya*; Baba, Masashi*; Miyawaki, Daisuke*; Terashima, Kazuki*; Arimura, Takeshi*; Mima, Masayuki*; et al.
no journal, ,