Refine your search:     
Report No.
 - 
Search Results: Records 1-20 displayed on this page of 25

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Effect of $$B$$-site randomness on the antiferroelectric/relaxor nature of the ground state; Diffuse and inelastic X-ray scattering study of Pb(In$$_{1/2}$$Nb$$_{1/2}$$)O$$_3$$

Owada, Kenji*; Tsukada, Shinya*; Fukuda, Tatsuo; Tsutsui, Satoshi*; Baron, A. Q. R.*; Mizuki, Junichiro*; Owa, Hidehiro*; Yasuda, Naohiko*; Terauchi, Hikaru*

Physical Review B, 98(5), p.054106_1 - 054106_10, 2018/08

 Times Cited Count:0 Percentile:100(Materials Science, Multidisciplinary)

Journal Articles

Effect of B-site randomness on the antiferroelectric/relaxor nature of the ground state; Inelastic X-ray scattering study of Pb(In$$_{1/2}$$Nb$$_{1/2}$$)O$$_{3}$$

Owada, Kenji; Fukuda, Tatsuo; Mizuki, Junichiro; Hirota, Kazuma*; Terauchi, Hikaru*; Tsutsui, Satoshi*; Baron, A. Q. R.*; Owa, Hidehiro*; Yasuda, Naohiko*

Journal of the Korean Physical Society, 59(3), p.2509 - 2514, 2011/09

 Times Cited Count:2 Percentile:77.51(Physics, Multidisciplinary)

Pb(In$$_{1/2}$$Nb$$_{1/2}$$)O$$_{3}$$ (PIN) can be antiferroelectric (AFE), ferroelectric (FE) or a relaxor depending upon the perovskite B-site randomness. Orderd PIN (O-PIN, without B-site randomness) is supposed to be an ideal system of lead-based complex perovskite Pb(B'B'')O$$_{3}$$ and expected to give us a clear picture of the AFE/relaxor nature of the ground state by the B-site randomness. We studied the dynamics of O-PIN by inelastic X-ray scattering. The quasielastic (QE) scattering shows the critical slowing down and the transverse acoustic (TA) mode shows the softening towards $$T_{rm N}$$. On the other hand, the transverse optic (TO) mode shows the softening toward low temperature with no clear anomaly at $$T_{rm N}$$. These results represent that the antiferroelectric (AFE) phase transition is associated with the TA and the origin of the QE scattering, while ferroelectric correlation does exist behind the AFE ordering. The effect of B-site randomness is finally discussed on the basis of the results.

Journal Articles

Antiferroelectric correlation in relaxor Pb(In$$_{1/2}$$Nb$$_{1/2}$$)O$$_{3}$$ and ferroelectric correlation in antiferroelectric Pb(In$$_{1/2}$$Nb$$_{1/2}$$)O$$_{3}$$

Owada, Kenji; Hirota, Kazuma*; Terauchi, Hikaru*; Fukuda, Tatsuo; Tsutsui, Satoshi*; Baron, A. Q. R.*; Mizuki, Junichiro; Owa, Hidehiro*; Yasuda, Naohiko*

Transactions of the Materials Research Society of Japan, 34(1), p.19 - 22, 2009/03

Pb(In$$_{1/2}$$Nb$$_{1/2}$$)O$$_{3}$$ (PIN) can be antiferroelectric (AFE), ferroelectric (FE) or a relaxor depending upon the perovskite B-site randomness. This is characterized by measurements of dielectric response, which shows behavior that is usually clearly in one of those three classes. In contrast, X-ray scattering studies suggest the presence of AFE correlation in the relaxor state and FE in AFE state. Weak phonon softening at zone boundary in relaxor state shows that the AFE correlation intrinsically exists in PIN, as does the corresponding elastic scattering at (${it h}$/2 ${it k}$/2 0), while weak diffuse scattering around 333 Bragg reflection appears in AFE state suggesting FE correlation. These results will support our previous speculation that the AFE and FE correlations coexist in PIN (K. Owada ${it et al}$., Phys, Rev. B${bf 77}$ 094136 (2008)). Such a coexistence or competition is widely seen in the perovskite relaxor and the coexistence of FE and AFE correlations is essential for generating relaxor state.

Journal Articles

Intrinsic ferroelectric instability in Pb(In$$_{1/2}$$Nb$$_{1/2}$$)O$$_{3}$$ revealed by changing B-site randomness; Inelastic X-ray scattering study

Owada, Kenji; Hirota, Kazuma*; Terauchi, Hikaru*; Fukuda, Tatsuo; Tsutsui, Satoshi*; Baron, A. Q. R.*; Mizuki, Junichiro; Owa, Hidehiro*; Yasuda, Naohiko*

Physical Review B, 77(9), p.094136_1 - 094136_8, 2008/03

 Times Cited Count:16 Percentile:39.67(Materials Science, Multidisciplinary)

Antiferroelectric (AFE), ferroelectric (FE) or relaxor states can appear in Pb(In$$_{1/2}$$Nb$$_{1/2}$$)O$$_{3}$$ (PIN) depending upon the perovskite B-site randomness. We studied the effects of this randomness on the dynamics of PIN by high resolution inelastic X-ray scattering using ordered PIN (AFE) and disordered PIN (relaxor) single crystals. We have found a clear softening of a transverse optic mode at the $$Gamma$$ point in both the samples, indicating a robust and intrinsic ferroelectric instability regardless of the actual ground state. We interpret that AFE is stabilized only when In and Nb ions are spatially ordered enough to overwhelm the FE instability. As the B-site randomness becomes larger, AFE is suppressed and the hidden FE state starts appearing. Ultimately, the randomness begins to predominate over the development of FE regions and blocks a long range FE order, which we believe yields polar nanoregions resulting in relaxor behaviors.

Journal Articles

Spatial distribution of the B-site inhomogeneity in an ${it as-grown}$ Pb(In$$_{1/2}$$Nb$$_{1/2}$$)O$$_{3}$$ single crystal studied by a complementary use of X-ray and neutron scatterings

Owada, Kenji; Hirota, Kazuma*; Terauchi, Hikaru*; Owa, Hidehiro*; Yasuda, Naohiko*

Journal of the Physical Society of Japan, 75(2), p.024606_1 - 024606_6, 2006/12

 Times Cited Count:6 Percentile:55.88(Physics, Multidisciplinary)

Structural properties of ${it as-grown}$ Pb(In$$_{1/2}$$Nb$$_{1/2}$$)O$$_{3}$$ (PIN) single crystals at room temperature (RT) were investigated by X-ray and neutron scattering techniques, taking much account of the difference in the penetration depth and spatial resolution of X-rays and those of neutrons. A strong diffuse scattering was observed by X-ray while h/4, k/4, 0 superlattice reflections were found by neutron, indicating a relaxor state in the outer-layer of the crystal and an antiferroelectric (AFE) state in the bulk. The phonon dispersion was measured for the first time for the PIN series. Two transverse optic (TO1 and TO2) modes were clarified near the zone center though neither water-fall behavior nor folding of phonon branches was confirmed. We have thus concluded that a major part of the ${it as-grown}$ PIN crystal at RT is ferroelectric (FE). These results imply that the $$B$$-site chemical ordering, i.e. inhomogeneity, which controls the structural properties of PIN, is unevenly distributed throughout the crystal. We speculate that small AFE grains coexist with the FE matrix while the outer-layer is in a relaxor state in the ${it as-grown}$ PIN.

Journal Articles

Stacking-fault-induced intermediate structure in bismuth titanate

Yoneda, Yasuhiro; Mizuki, Junichiro; Katayama, Ryoko*; Yagi, Kenichiro*; Terauchi, Hikaru*; Hamazaki, Shinichi*; Takashige, Masaaki*

Applied Physics Letters, 83(2), p.275 - 277, 2003/07

 Times Cited Count:18 Percentile:40.38(Physics, Applied)

We observed an intermediate structure during the re-crystallization process from the amorphous state of Bi$$_4$$Ti$$_3$$O$$_{12}$$ prepared by rapid quenching. The intermediate structure which appears during the re-crystallization process consists of two phases; one is pyrochlore Bi$$_2$$Ti$$_2$$O$$_7$$ phase and the other is a stacking-fault induced structure under the excessive Bi condition. The microstructure of the stacking-fault induced structure was investigated by synchrotron X-ray diffraction. In the case of a large number of Bi$$_2$$O$$_2$$, some are inserted between the pseudo-perovskite layers of Bi$$_4$$Ti$$_3$$O$$_{12}$$, and a non-stoichiometric Bi$$_2$$WO$$_6$$-like structure is stabilized.

Journal Articles

RHEED observation of BaTiO$$_3$$ thin films grown by MBE

Yoneda, Yasuhiro; Sakaue, Kiyoshi*; Terauchi, Hikaru*

Surface Science, 529(3), p.283 - 287, 2003/04

 Times Cited Count:7 Percentile:58.83(Chemistry, Physical)

Ferroelectric BaTiO$$_3$$ thin filmwith a thickness of 10ML were epitaxally grown on SrTiO$$_3$$ (001) substrate by very slow deposition using MBE. The investigation were carried out by two growth methods: (i) codeposition and (ii) alternate deposition. In-situ observation of RHEED confirmed that an epitaxial cube-on-cube structure was prepared. After the deposition, X-ray diffraction measurements were carried out. The 10-ML-thick BaTiO$$_3$$ films were highly ${it c}$-axis oriented single crystals with good film quality.

Journal Articles

Defect-induced phase separation in relaxor Pb(In$$_{1/2}$$Nb$$_{1/2}$$)O$$_3$$ crystals

Yoneda, Yasuhiro; Matsumoto, Norimasa; Terauchi, Hikaru*; Yasuda, Naohiko*

Journal of Physics; Condensed Matter, 15(3), p.467 - 474, 2003/01

 Times Cited Count:5 Percentile:67.04(Physics, Condensed Matter)

Thermal properties of ordered and disordered Pb(In$$_{1/2}$$Nb$$_{1/2}$$)O$$_3$$ (PIN) single clystals were investigated. The defect-induced phase separation provided a good agreement of the instability of the relaxor nd antiferroelectric states of the PIN crystals.

Journal Articles

Dielectric investigation of [(SrTiO$$_{3}$$)$$_{6}$$(BaTiO$$_{3}$$)$$_{6}$$]$$_{2}$$ multilayer capacitor

Yoneda, Yasuhiro; Sakaue, Kiyoshi*; Terauchi, Hikaru*

Japanese Journal of Applied Physics, Part 1, 40(12), p.6888 - 6892, 2001/12

 Times Cited Count:2 Percentile:87.55(Physics, Applied)

no abstracts in English

Journal Articles

Phase transition of BaTiO$$_{3}$$ thin films

Yoneda, Yasuhiro; Sakaue, Kiyoshi*; Terauchi, Hikaru*

Journal of Physics; Condensed Matter, 13(42), p.9575 - 9582, 2001/10

 Times Cited Count:18 Percentile:32.96(Physics, Condensed Matter)

no abstracts in English

Journal Articles

The Phase transition of BaTiO$$_{3}$$ thin film on Pt/MgO substrate

Yoneda, Yasuhiro; Sakaue, Kiyoshi*; Terauchi, Hikaru*

Journal of Physics; Condensed Matter, 12(39), p.8523 - 8529, 2000/10

 Times Cited Count:9 Percentile:50.65(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Dielectric investigation of BaTiO$$_{3}$$ thin-film capacitor

Yoneda, Yasuhiro; Sakaue, Kiyoshi*; Terauchi, Hikaru*

Japanese Journal of Applied Physics, Part 1, 39(8), p.4839 - 4842, 2000/08

 Times Cited Count:15 Percentile:42.48(Physics, Applied)

no abstracts in English

Journal Articles

High energy XAFS study of Sm: K-edge in Sm$$_{2}$$Fe$$_{17}$$Nx

Kasatani, Hirofumi*; Omura, Masashi*; Yokoyama, Katsumi*; Kobayashi, Kurima*; Nishihata, Yasuo; Yagi, Kenichiro*; Terauchi, Hikaru*

Japanese Journal of Applied Physics, 38(Suppl.38-1), p.433 - 435, 1999/06

 Times Cited Count:3 Percentile:80.33(Physics, Applied)

High energy XAFS studies of Sm: K-edge in Sm2Fe17Nx with x = 0.0, <= 0.1, 0.5, 2.0 and 3.0 were carried out at room temperature in order to clarify the relation between the local structure around the Sm-atom and the change of the magnetic property due to the absorption of nitrogen atom. In the XANES region, we firstly found the change of Sm electron state by nitriding because of the change of the shape in the absorption edge junp. In the result of the EXAFS spectra, we confirmed that the Sm-Fe distance was expanded monotonously due to the absorption of N-atom.

Journal Articles

Study on ferroelectric domains in BaTiO$$_3$$ crystalline films and bulk crystals by atomic force and scanning electron microscopies

Tsunekawa, Shin*; Fukuda, Tsuguo*; Ozaki, Toru*; Yoneda, Yasuhiro; Okabe, Toru*; Terauchi, Hikaru*

Journal of Applied Physics, 84(2), p.999 - 1002, 1998/06

 Times Cited Count:15 Percentile:40.84(Physics, Applied)

no abstracts in English

Journal Articles

Structural characterization of BaTiO$$_{3}$$ thin films grown by molecular beam epitaxy

Yoneda, Yasuhiro*; *; Sakaue, Kiyoshi*; Terauchi, Hikaru*; *; *

Journal of Applied Physics, 83(5), p.2458 - 2461, 1998/03

 Times Cited Count:93 Percentile:5.24(Physics, Applied)

no abstracts in English

Journal Articles

Substrate effects on the growth of epitaxial BaTiO$$_{3}$$ thin films

Yoneda, Yasuhiro*; *; Sakaue, Kiyoshi*; Terauchi, Hikaru*

Journal of the Korean Physical Society, 32, p.S1393 - S1396, 1998/02

no abstracts in English

Journal Articles

X-ray diffraction of SrTiO$$_{3}$$/BaTiO$$_{3}$$ multilayer films

Yoneda, Yasuhiro*; *; Sakaue, Kiyoshi*; Terauchi, Hikaru*

Journal of the Korean Physical Society, 32, p.S1636 - S1638, 1998/02

no abstracts in English

Journal Articles

Growth of ultrathin BaTiO$$_{3}$$ films on SrTiO$$_{3}$$ and MgO substrates

Yoneda, Yasuhiro*; *; Sakaue, Kiyoshi*; Terauchi, Hikaru*

Surface Science, 410(1), p.62 - 69, 1998/00

 Times Cited Count:19 Percentile:30.64(Chemistry, Physical)

no abstracts in English

Oral presentation

X-ray and neutron scattering study of Pb(In$$_{1/2}$$Nb$$_{1/2}$$)O$$_{3}$$

Owada, Kenji; Hirota, Kazuma*; Terauchi, Hikaru*; Owa, Hidehiro*; Yasuda, Naohiko*

no journal, , 

no abstracts in English

Oral presentation

Phonon measurements of relaxor Pb(In$$_{1/2}$$Nb$$_{1/2}$$)O$$_{3}$$

Owada, Kenji; Hirota, Kazuma*; Fukuda, Tatsuo; Tsutsui, Satoshi*; Baron, A. Q. R.*; Terauchi, Hikaru*; Yasuda, Naohiko*; Owa, Hidehiro*; Mizuki, Junichiro

no journal, , 

no abstracts in English

25 (Records 1-20 displayed on this page)