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Journal Articles

New SiC kicker power supply for J-PARC

Takayanagi, Tomohiro; Ono, Ayato; Sugita, Moe; Yamamoto, Kazami; Oguri, Hidetomo; Kinsho, Michikazu; Horino, Koki*; Ueno, Tomoaki*; Oda, Kodai*; Tokuchi, Akira*; et al.

Journal of Physics; Conference Series, 2687(8), p.082021_1 - 082021_7, 2024/01

 Times Cited Count:0 Percentile:0.00(Physics, Atomic, Molecular & Chemical)

A new kicker power supply using SiC-MOSFETs is under development at J-PARC. The base circuit uses an induction voltage superposition circuit of the LTD method, and the semiconductor module circuit consists of a radial symmetry type that achieves low noise. The three main parts of an existing kicker power supply, the thyratron, PFN circuit, and end clipper, can be configured in a single module circuit. The power supply consists of a main circuit module board that forms a trapezoidal pulse and a correction circuit module board that compensates for droop of the flat section. The thirty-two main circuit module boards and twenty correction circuit module boards are connected in series in a hierarchical manner to achieve the waveform specifications required for J-PARC RCS kicker power supplies. In addition, an insulating cylinder for conductors has been developed that suppresses corona discharge and withstands continuous operation for long periods of time.

Journal Articles

Development of semiconductor switches for high-power crowbar circuits for J-PARC accelerator

Ono, Ayato; Takayanagi, Tomohiro; Fuwa, Yasuhiro; Shinozaki, Shinichi; Ueno, Tomoaki*; Horino, Koki*; Sugita, Moe; Yamamoto, Kazami; Kinsho, Michikazu; Ikoma, Naoya*; et al.

Proceedings of 20th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.871 - 876, 2023/11

In J-PARC, an ignitron is used for the crowbar device of the klystron power supply to excite the RF acceleration voltage in a Linac cavity. Mercury, that is used in the ignitron, would be prohibition of use in the future due to environmental protection. Therefore, we designed a semiconductor crowbar switch for short-circuit protection of klystron using a MOS gate thyristor. We have manufactured an oval-type board module that realizes an operating output of 3kV, 40kA, and 50us per board. Because a high voltage of 120 kV is applied on each board, we adopted a self-power supply method to supply a electricity for the control system. This method can create the electricity from a high-voltage DCDC converter. We confirmed the operating performance on a 1/2 scale (60 kV, 40 kA) of the voltage in the existing ignitron system (120 kV, 40 kA). We also studied a test circuit in a higher voltage range of more than 90 kV. Our latest result is well promising for an alternative system of ignitron.

Journal Articles

SiC-based semiconductor switch power supply for kicker magnets

Takayanagi, Tomohiro; Ono, Ayato; Horino, Koki*; Ueno, Tomoaki*; Sugita, Moe; Kinsho, Michikazu; Tokuchi, Akira*; Ikoma, Naoya*; Nakata, Kyosuke*; Kamezaki, Hiroaki*; et al.

Proceedings of 20th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.235 - 239, 2023/08

The kicker system used for injection and extraction of accelerated beams requires a pulsed power supply with high speed and high repetition rate of short pulses acting only on a specified bunch of beams. We have developed a semiconductor switch power supply with a rated output of 40kV/2kA using SiC-MOSFETs, one of the next-generation power semiconductors. Then, we reconfigured this semiconductor switch power supply into two units with 20kV/2kA output and conducted energization tests using an actual kicker electromagnet. It was also demonstrated with magnetic field waveforms that the flat-top correction function of this power supply can suppress ringing in the waveform by less than half. This achievement enables the reduction of the kick angle difference caused by ringing, which is a factor in beam loss. In the presentation, specifications, test equipment, and evaluation results of the developed SiC semiconductor switch power supply will be reported.

Journal Articles

Construction of low-jitter circuit for new kicker power supply using next-generation power semiconductor

Oda, Kodai; Takayanagi, Tomohiro; Ono, Ayato; Horino, Koki*; Ueno, Tomoaki*; Sugita, Moe; Morishita, Takatoshi; Iinuma, Hiromi*; Tokuchi, Akira*; Kamezaki, Hiroaki*; et al.

Proceedings of 19th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.610 - 614, 2023/01

Kicker system is being used to kick the accelerated 3 GeV beam into the transport lines in RCS of J-PARC. The current kicker power supply applies thyratrons to discharge switches. We are developing a new kicker power supply using next-generation power semiconductors. The timing of the semiconductor switch operation is determined by the input of an external trigger signal. Large timing jitter causes unstable output pulses and beam loss due to beam orbit deviate from reference orbit. Therefore, a low jitter circuit that achieves high repeatability of 2 ns or less will be developed for the new kicker power supply. A prototype trigger generator has been fabricated, and jitter has been evaluated. The results of the evaluation test and the circuit configuration plan for reducing jitter will be reported.

Journal Articles

Development of semiconductor switches for high-power crowbar circuits

Ono, Ayato; Takayanagi, Tomohiro; Fuwa, Yasuhiro; Shinozaki, Shinichi; Ueno, Tomoaki*; Horino, Koki*; Sugita, Moe; Yamamoto, Kazami; Kinsho, Michikazu; Ikoma, Naoya*; et al.

Proceedings of 19th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.395 - 399, 2023/01

At J-PARC, an ignitron is used for the crowbar device of the klystron power supply for high-frequency acceleration of a linear accelerator. Ignitron uses mercury, which is of limited use worldwide, and is expected to be discontinued in the future. Therefore, we designed a semiconductor crowbar switch for short-circuit protection of klystron using a MOS gate thyristor. We have manufactured an oval-type board module that realizes an operating output of 3 kV, 40 kA, and 50 $$mu$$s per board. For the control power supply to each board module assuming a high voltage of 120 kV, we adopted a self-power supply method that creates a control power supply with a high-voltage DCDC converter from the voltage shared and charged by each board module. It was possible to confirm the operating performance on a 1/2 scale (60 kV, 40 kA) against the voltage of the existing equipment (120 kV, 40 kA) by connecting twenty oval board modules in series. The output test result will be reported.

Journal Articles

Semiconductor pulse power supplies for accelerators at J-PARC

Takayanagi, Tomohiro; Ono, Ayato; Fuwa, Yasuhiro; Shinozaki, Shinichi; Horino, Koki*; Ueno, Tomoaki*; Sugita, Moe; Yamamoto, Kazami; Oguri, Hidetomo; Kinsho, Michikazu; et al.

Proceedings of 19th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.242 - 246, 2023/01

At J-PARC, semiconductor short pulse power supplies to replace kicker power supplies and semiconductor long pulse power supplies to replace klystron power supply systems are under construction. We have fabricated a 40kV/2kA/1.2$$mu$$s unit power supply that employs a linear transformer drivers (LTD) system for kickers. Currently, we are working on a high voltage insulating cylinder insulator that suppresses corona discharges using only the insulator structure, without using insulating oil. In addition, the MARX system was adopted for klystron power supply system. A main circuit unit for 8kV/60A/830$$mu$$s rectangular pulse output and an 800V/60A correction circuit unit that improves the flat top droop from 10% to 1% were manufactured. Furthermore, a 2.2kV/2.4kW high voltage SiC inverter charger has been fabricated for this MARX power supply. The presentation will report the evaluation results of each test and prospects for semiconductor pulse power supplies.

Journal Articles

Development of a new power supply for the RCS kicker magnet with the LTD circuit of SiC-MOSFETs

Takayanagi, Tomohiro; Kinsho, Michikazu; Yamamoto, Kazami; Ueno, Tomoaki*; Horino, Koki*; Tokuchi, Akira*; Mushibe, Yoichi*

Proceedings of 14th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.45 - 49, 2017/12

J-PARC RCS needs updating of equipment after 10 years since the start of operation. Therefore, a pulse power supply applying a next generation semiconductor (SiC-MOSFET) with low switching loss and high breakdown voltage are investigated This supply constructs a serial / parallel multiplexing circuit using a SiC-MOSFET and a plurality of large capacity capacitors with one circuit board (LTD). By using this board as a main board and adopting a multistage hierarchical structure, it is possible to satisfy the specifications of the RCS kicker power supply with a voltage of 40 kV, a current of 4 kA and a rectangular wave pulse width of 1500 ns. Moreover, by adding a plurality of correction boards of 40 V and arbitrarily setting the operation trigger of the board, flatness correction is also possible. It was confirmed that the results of the preliminary test with the maximum output of 4 kV / 2 kA by are effective for maintaining stable operation at the RCS high intensity beam output.

Journal Articles

An Innovative high-power constant-current pulsed-arc power-supply for a high-density pulsed-arc-plasma ion-source using a LaB$$_{6}$$-filament

Ueno, Akira; Oguri, Hidetomo; Ikegami, Kiyoshi*; Namekawa, Yuya; Okoshi, Kiyonori; Tokuchi, Akira*

Review of Scientific Instruments, 81(2), p.02A718_1 - 02A718_3, 2010/02

 Times Cited Count:2 Percentile:12.75(Instruments & Instrumentation)

Oral presentation

Development of a fast-rising short-pulse high-voltage power supply using SiC-MOSFETs for the J-PARC kicker system

Takayanagi, Tomohiro; Ono, Ayato*; Horino, Koki*; Ueno, Tomoaki*; Sugita, Moe; Fuwa, Yasuhiro; Shinozaki, Shinichi; Tokuchi, Akira*; Ikoma, Naoya*; Kamezaki, Hiroaki*

no journal, , 

9 (Records 1-9 displayed on this page)
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