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standardization method; Development of irradiation silicon technology in productivity using research reactor (Joint research)Motohashi, Jun; Takahashi, Hiroyuki; Magome, Hirokatsu; Sasajima, Fumio; Tokunaga, Okihiro*; Kawasaki, Kozo*; Onizawa, Koji*; Isshiki, Masahiko*
JAEA-Technology 2009-036, 50 Pages, 2009/07
JAEA-Technology-2009-036.pdf:32.66MB
JRR-3 and JRR-4 have been providing neutron-transmutation-doped silicon (NTD-Si) by using the silicon NTD process. We have been considering to introduce the neutron filter, which is made of high-purity-titanium, into uniform doping. Silicon carbide (SiC) semiconductors doped with NTD technology are considered suitable for high power devices with superior performances to conventional Si-based devices. The impurity contents in the high-purity-titanium and SiC were analyzed by neutron activation analyses (NAA) using k standardization method. Analyses showed that the number of impurity elements detected from the high-purity-titanium and SiC were 6 and 9, respectively. Among these impurity elements, Sc detected from the high-purity-titanium and Fe detected from SiC were comparatively long half life nuclides. From the viewpoint of exposure in handling them, we need to examine the impurity control of materials.
Oshima, Takeshi; Tokunaga, Okihiro*; Isshiki, Masahiko*; Sasajima, Fumio; Ito, Hisayoshi
Materials Science Forum, 556-557, p.457 - 460, 2007/00
no abstracts in English
Tokunaga, Okihiro
Genshiryoku eye, 44(8), p.27 - 30, 1998/08
no abstracts in English
Tokunaga, Okihiro
Genshiryoku Shisutemu Nyusu, 9(1), 6 Pages, 1998/06
no abstracts in English
Tokunaga, Okihiro
Environmental Applications of Ionizing Radiation, p.99 - 112, 1998/00
no abstracts in English
Tokunaga, Okihiro
Hikari Oyobi Kassei Kagakushu No Hanno Kogaku; Kagaku Kogaku Shimpojiumu Shirizu 62, p.21 - 27, 1998/00
no abstracts in English
Namba, Hideki; Hashimoto, Shoji; Tokunaga, Okihiro; *
Radiation Physics and Chemistry, 53(6), p.673 - 681, 1998/00
Times Cited Count：11 Percentile：66.43(Chemistry, Physical)no abstracts in English
Tokunaga, Okihiro
Sci. Technol. Jpn., 16(64), p.47 - 50, 1998/00
no abstracts in English
Hirota, Koichi; J.Maekelae*; Tokunaga, Okihiro
Industrial & Engineering Chemistry Research, 35(10), p.3362 - 3368, 1996/00
Times Cited Count：17 Percentile：72.47(Engineering, Chemical)no abstracts in English
Tokunaga, Okihiro
Kankyo To Shoenerugi No Tameno Enerugi Shingijutsu Taikei, 0, p.506 - 508, 1996/00
no abstracts in English
Hashimoto, Shoji; Tokunaga, Okihiro
OHM (Sougou Denki Zasshi), 82(9), p.55 - 59, 1995/09
no abstracts in English
*; *; Tokunaga, Okihiro; Hashimoto, Shoji; Namba, Hideki; *; *
Denki Hyoron, 0(8), p.70 - 73, 1995/08
no abstracts in English
Namba, Hideki; Tokunaga, Okihiro; Hashimoto, Shoji; *; *; *; *; *
JAERI-Tech 95-013, 6 Pages, 1995/03
no abstracts in English
Hashimoto, Shoji; Namba, Hideki; Tokunaga, Okihiro; *; *; *; *; *
1995 SO
Control Symp., Book 3, 0, 10 Pages, 1995/03
no abstracts in English
*; *; *; *; Namba, Hideki; Tokunaga, Okihiro; Hashimoto, Shoji; *; *
Ebara Jiho, (166), p.56 - 64, 1995/00
no abstracts in English
Tokunaga, Okihiro
Genshiryoku Kogyo, 41(7), p.24 - 29, 1995/00
no abstracts in English
Tokunaga, Okihiro
Hoshasen To Sangyo, 0(66), p.59 - 60, 1995/00
no abstracts in English
*; *; *; *; *; Tokunaga, Okihiro; Namba, Hideki
Proc. of Power-Gen Asia 94,Conf. Papers, 1, p.457 - 465, 1995/00
no abstracts in English
*; Hirota, Koichi; *; *; *; *; *; *; *; Miyata, Teijiro; et al.
Radiation Physics and Chemistry, 45(6), p.1021 - 1027, 1995/00
Times Cited Count：7 Percentile：59.17(Chemistry, Physical)no abstracts in English
Namba, Hideki; Tokunaga, Okihiro; Hashimoto, Shoji; *; *; *; *; *
Radiation Physics and Chemistry, 46(4-6), p.1103 - 1106, 1995/00
Times Cited Count：35 Percentile：93.82(Chemistry, Physical)no abstracts in English
