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Tran Duy, T.*; Sawada, Shinichi; Hasegawa, Shin; Yoshimura, Kimio; Oba, Yojiro*; Onuma, Masato*; Katsumura, Yosuke*; Maekawa, Yasunari
Macromolecules, 47(7), p.2373 - 2383, 2014/04
Times Cited Count：30 Percentile：70.08(Polymer Science)The hierarchical structures of graft-type ETFE-based polymer electrolyte membranes (ETFE-PEMs) were investigated using small- and ultrasmall-angle X-ray cattering experiments. The ETFE-PEMs with IECs 
2.4 mmol/g possessed conducting graft domains around lamellar crystals, with a d-spacing of 21.8-29.1 nm, and oriented crystallites with short and long correlation distances of 218-320 and 903-1124 nm, respectively. The membranes with IECs 
2.7 mmol/g showed a new phase of crystallite network domains with a d-range of 225-256 nm, indicating a phase transition from oriented crystallite to crystallite network structures in the IEC range of 2.4-2.7 mmol/g. Noted that for the ETFE-PEMs with high IECs higher conductivity at 30% RH and compatible tensile strengths at 100% RH and 80 
C, compared with Nafion, originated from the well-interconnected ion channels around the crystallites and the remaining lamellar crystals and crystallites, respectively.
Maekawa, Masaki; Kawasuso, Atsuo; Tran Duy, T.*
no journal, ,
The irradiation defect and induced structure formed by helium ion irradiation into silicon were observed by the positron annihilation method. The positron trapping to the helium bubbles has not been confirmed. Helium ions were implanted to the silicon (irradiation dose: 2
10
/cm
at room temperature) with the energy of 50-200 keV. The peak intensities of annihilation 
rays (S parameter) and its annealing behaviors were measured. S parameter decreased after 300C annealing. This means that positrons are trapped to the irradiation defects filled up with the helium atoms. S parameter slightly increased with 800C annealing and increased rapidly at 900C. This is caused by the growth of helium bubbles and subsequent desorption of helium atoms. From the first principle calculation, positron trapping at the defect cluster of approximately 1nm filled up with 36 helium atoms is suggested.
Hata, Kuniki; Katsumura, Yosuke*; Kudo, Hisaaki*; Yamashita, Shinichi*; Ueda, Toru*; Nakazono, Yoshihisa*; Iwamatsu, Kazuhiro*; Yo, S.*; Okaya, Keiko*; Amemiya, Takuya*; et al.
no journal, ,
no abstracts in English
