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Journal Articles

Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams

Kada, Wataru*; Kambayashi, Yuya*; Iwamoto, Naoya*; Onoda, Shinobu; Makino, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; et al.

Nuclear Instruments and Methods in Physics Research B, 348, p.240 - 245, 2015/04

 Times Cited Count:4 Percentile:40.75(Instruments & Instrumentation)

Journal Articles

In-plane orientation control of 2,7-diphenyl[1]benzothieno[3,2-$$b$$][1]benzothiophene monolayer on bismuth-terminated Si(111) vicinal surfaces with wettability optimization

Otomo, Manabu; Tsuchida, Yuya*; Muraya, Naoki*; Yanase, Takashi*; Sakai, Seiji; Yonezawa, Tetsu*; Nagahama, Taro*; Hasegawa, Tetsuya*; Shimada, Toshihiro*

Journal of Physical Chemistry C, 117(22), p.11555 - 11561, 2013/06

 Times Cited Count:2 Percentile:9.84(Chemistry, Physical)

We report in-plane orientation control of newly developed high-mobility organic semiconductor: 2,7-diphenyl[1]benzothieno[3,2-$$b$$][1]benzothiophene (DPh-BTBT). As previously reported on monolayer pentacene, it was revealed that bunched steps on vicinal Si(111) with bismuth termination break the surface symmetry and reduce three-fold symmetry of DPh-BTBT grains into quasi-single orientation. Interestingly, the critical step height necessary for the orientation control was different from that of pentacene. We examined several mechanisms of orientation control and concluded that the facet nano structure fabricated by step bunching is working as an anisotropic template. We will also show the wettability control of bismuth terminated silicon surface and show that the growth mode of DPh-BTBT is dependent on the surface nanostructure of Bi-Si.

Oral presentation

Orientation control and photoemission studies of organic films on Bi terminated Si(331)

Otomo, Manabu; Tsuchida, Yuya*; Sakai, Seiji; Hasegawa, Tetsuya*; Shimada, Toshihiro*

no journal, , 

no abstracts in English

Oral presentation

Evaluation of the defect level in 4H-SiC schottky barrier diode by alpha particle induced charge transient spectroscopy

Kambayashi, Yuya; Onoda, Shinobu; Kada, Wataru*; Makino, Takahiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi; Kamiya, Tomihiro; Hanaizumi, Osamu*

no journal, , 

no abstracts in English

Oral presentation

Investigation of deep levels in silicon carbide using ion-induced charge transient spectroscopy

Kada, Wataru*; Onoda, Shinobu; Iwamoto, Naoya*; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Makino, Takahiro; Kambayashi, Yuya; Koka, Masashi; Hanaizumi, Osamu*; Kamiya, Tomihiro; et al.

no journal, , 

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