In situ study of growth mechanism of germanene segregated through Ag(111) thin films by Raman and X-ray photoelectron spectroscopy

Terasawa, Tomoo; Katsube, Daiki*; Yano, Masahiro; Ozawa, Takahiro*; Tsuda, Yasutaka; Yoshigoe, Akitaka; Asaoka, Hidehito; Suzuki, Seiya

Chemistry of Materials, 38(6), p.2933 - 2945, 2026/03

AA2025-0822.pdf:1.33MB

https://doi.org/10.1021/acs.chemmater.5c03462

Nacre-like MXene/polyacrylic acid layer-by-layer multilayers as hydrogen gas barriers

Auh, Y. H.*; Neal, N. N.*; Arole, K.*; Regis, N. A.*; Nguyen, T.*; Ogawa, Shuichi*; Tsuda, Yasutaka; Yoshigoe, Akitaka; Radovic, M.*; Green, M. J.*; et al.

ACS Applied Materials & Interfaces, 17(21), p.31392 - 31402, 2025/05

https://doi.org/10.1021/acsami.5c03632

Germanene reformation from oxidized germanene on Ag(111)/Ge(111) by vacuum annealing

Suzuki, Seiya; Katsube, Daiki*; Yano, Masahiro; Tsuda, Yasutaka; Terasawa, Tomoo; Ozawa, Takahiro*; Fukutani, Katsuyuki; Kim, Y.*; Asaoka, Hidehito; Yuhara, Junji*; et al.

Small Methods, 9(3), p.2400863_1 - 2400863_9, 2025/03

https://doi.org/10.1002/smtd.202400863

Synchrotron radiation photoemission electron microscopy study on radioactive cesium-bearing microparticle collected in Fukushima

Yoshigoe, Akitaka; Tsuda, Yasutaka; Kobata, Masaaki; Okane, Tetsuo; Satou, Yukihiko; Okochi, Takuo*

e-Journal of Surface Science and Nanotechnology (Internet), 23(1), p.16 - 21, 2025/02

https://doi.org/10.1380/ejssnt.2025-004

Electron transfer capability in atomic hydrogen reactions for imidazole groups bound to the insulating alkanethiolate layer on Au(111)

Kato, Hiroyuki S.*; Muroyama, Mizuho*; Kobayakawa, Nano*; Muneyasu, Riku*; Tsuda, Yasutaka; Murase, Natsumi*; Watanabe, Seiya*; Yamada, Takashi*; Kanematsu, Yusuke*; Tachikawa, Masanori*; et al.

Journal of Physical Chemistry Letters (Internet), 15(43), p.10769 - 10776, 2024/10

https://doi.org/10.1021/acs.jpclett.4c02306

SRPES and XPS analysis of activation and deterioration processes for Ti-Zr-V NEG coating

Kamiya, Junichiro; Abe, Kazuhide; Fujimori, Shinichi; Fukuda, Tatsuo; Kobata, Masaaki; Morohashi, Yuko; Tsuda, Yasutaka; Yamada, Ippei; Yoshigoe, Akitaka

e-Journal of Surface Science and Nanotechnology (Internet), 22(4), p.316 - 326, 2024/08

https://doi.org/10.1380/ejssnt.2024-030

The activation and deterioration mechanisms of the Ti-Zr-V non-evaporable getter (NEG) coating have been investigated. Operando analysis of the surface chemical composition change of the Ti-Zr-V coating was performed by the synchrotron radiation photoelectron spectroscopy (SRPES) during the process of raising the sample temperature to 250C, corresponding to the activation process of NEG coating. The surface oxidation process was also characterized by the SRPES during the injection of O_2 gas into the chamber while keeping the sample temperature at 250C, corresponding to the deterioration process of NEG coating, i.e. surface oxidation and oxygen diffusion to the coating interior. The depth profile of the oxidized sample was measured with X-ray photoelectron spectroscopy. The results shows, in the activation process, the surface Zr gets the oxygen from the oxides of Ti and V at the first stage, resulting in the metallic Ti and V on the surface, and the oxygen of the Zr-oxide and/or Zr sub-oxides diffuse to the interior of the coating in the continuous temperature rise, resulting in the metallic Zr on the surface. It is further suggested that the deterioration of the Ti-Zr-V NEG coating means the Zr and secondary Ti are oxidized deep into the coating, resulting in the restriction of the oxygen migration from the NEG compositions on the surface and consequently the lack of surface metallization.

Work function lowering of LaB by monolayer hexagonal boron nitride coating for improved photo- and thermionic-cathodes

Yamaguchi, Hisato*; Yusa, Ryunosuke*; Wang, G.*; Pettes, M. T.*; Liu, F.*; Tsuda, Yasutaka; Yoshigoe, Akitaka; Abukawa, Tadashi*; Moody, N. A.*; Ogawa, Shuichi*

Applied Physics Letters, 122(14), p.141901_1 - 141901_7, 2023/04

https://doi.org/10.1063/5.0142591

A lowering of work function for LaB by monolayer hexagonal BN coating is reported. Photoemission electron microcopy (PEEM) and thermionic emission electron microscopy (TEEM) both revealed that the hBN coated region of a LaB(100) single crystal has lower work function compared to the bare (i.e., non-coated) and graphene coated regions. A larger decrease of work function for the hBN coated LaB(100) compared to graphene coated LaB(100) was qualitatively supported by our density functional theory (DFT) calculations. Adding an oxide layer in the calculations improved consistency between the calculation and experimental results. We followed up our calculations with synchrotron-radiation X-ray photoelectron spectroscopy (SR-XPS) and confirmed the presence of an oxide layer on our LaB.

Evaluation of doped potassium concentrations in stacked two-Layer graphene using real-time XPS

Ogawa, Shuichi*; Tsuda, Yasutaka; Sakamoto, Tetsuya*; Okigawa, Yuki*; Masuzawa, Tomoaki*; Yoshigoe, Akitaka; Abukawa, Tadashi*; Yamada, Takatoshi*

Applied Surface Science, 605, p.154748_1 - 154748_6, 2022/12

https://doi.org/10.1016/j.apsusc.2022.154748

Immersion of graphene in KOH solution improves its mobility on SiO/Si wafers. This is thought to be due to electron doping by modification with K atoms, but the K atom concentration C in the graphene has not been clarified yet. In this study, the C was determined by XPS analysis using high-brilliance synchrotron radiation. The time evolution of C was determined by real-time observation, and the C before irradiation of synchrotron radiation was estimated to be 0.94%. The C 1s spectrum shifted to the low binding energy side with the desorption of K atoms. This indicates that the electron doping concentration into graphene is decreasing, and it is experimentally confirmed that K atoms inject electrons into graphene.

Observation of chemisorbed O molecule at SiO/Si(001) interface during Si dry oxidation

Tsuda, Yasutaka; Yoshigoe, Akitaka; Ogawa, Shuichi*; Sakamoto, Tetsuya*; Takakuwa, Yuji*

e-Journal of Surface Science and Nanotechnology (Internet), 21(1), p.30 - 39, 2022/11

https://doi.org/10.1380/ejssnt.2023-005

High reactivity of HO vapor on GaN surfaces

Sumiya, Masatomo*; Sumita, Masato*; Tsuda, Yasutaka; Sakamoto, Tetsuya; Sang, L.*; Harada, Yoshitomo*; Yoshigoe, Akitaka

Science and Technology of Advanced Materials, 23(1), p.189 - 198, 2022/00

https://doi.org/10.1080/14686996.2022.2052180

GaN is an attracting material for power-electronic devices. Understanding the oxidation at GaN surface is important for improving metal-oxide-semiconductor (MOS) devices. In this study, the oxidation at GaN surfaces depending on the GaN crystal planes (+c, -c, and m-plane) was investigated by real time XPS and DFT-MD simulation. We found that HO vapor has the highest reactivity due to the spin interaction between HO and GaN surfaces. The bond length between the Ga and N on the -c GaN surface was increased by OH attacking the back side of three-fold Ga atom. The chemisorption on the m-plane was dominant. The intense reactions of oxidation and AlGaN formation for p-GaN were observed at the interface of the AlO layer deposited by ALD using HO vapor. This study suggests that an oxidant gas other than HO and O should be used to avoid unintentional oxidation during AlGaN atomi layer deposition.