Magnetoferroelectric phase transition induced by latent spin-lattice coupling in the geometrically frustrated magnet

Tamatsukuri, Hiromu; Uchihara, Takeru*; Mitsuda, Setsuo*; Ishii, Yuta*; Nakao, Hironori*; Takehana, Kanji*; Imanaka, Yasutaka*

Physical Review B, 111(13), p.134403_1 - 134403_9, 2025/04

https://doi.org/10.1103/PhysRevB.111.134403

Dissociative adsorption of supersonic CHCl on Cu oxide Surfaces; CuO(111) and bulk CuO precursor "29"; Structure on Cu(111)

Hayashida, Koki*; Tsuda, Yasutaka; Murase, Natsumi*; Yamada, Takashi*; Yoshigoe, Akitaka; Dio, W. A.*; Okada, Michio*

Applied Surface Science, 669, p.160475_1 - 160475_6, 2024/10

https://doi.org/10.1016/j.apsusc.2024.160475

Coverage dependence upon early oxidation stages of hafnium-adsorbed Si(111)-77

Kakiuchi, Takuhiro*; Anai, Ryota*; Saiki, Taiju*; Tsuda, Yasutaka; Yoshigoe, Akitaka

Journal of Physical Chemistry C, 128(31), p.13052 - 13063, 2024/08

https://doi.org/10.1021/acs.jpcc.4c02368

0xidation at the interface and the surface of Si(111) substrate with thin Hf films were studied using synchrotron radiation photoelectron spectroscopy in conjunction with supersonic oxygen molecular beams (SOMB). An Hf/Si(111) with a coverage of 0.5 monolayer (ML) included HfSi and HfSi. Following exposures to thermal oxygen molecules with a translational energy (Et) of 0.03 eV, HfSi was oxidized into Hf valence. Following SOMB irradiation with Et of 0.39 eV, the other HfSi could be oxidized into the Hf. Following the thermal O exposures, the metallic Hf was nonlocally oxidized to HfO via trapping-mediated dissociative adsorption. Meanwhile, the segregated Si atoms were oxidized by SOMB irradiation with 2.2 eV and SiO was generated on the surface.

CHCl dissociation, CH abstraction, and Cl adsorption from the dissociative scattering of supersonic CHCl on Cu(111) and Cu(410)

Makino, Takamasa*; Tsuda, Yasutaka; Yoshigoe, Akitaka; Dio, W. A.*; Okada, Michio*

Applied Surface Science, 642, p.158568_1 - 158568_6, 2024/01

https://doi.org/10.1016/j.apsusc.2023.158568

Work function lowering of LaB by monolayer hexagonal boron nitride coating for improved photo- and thermionic-cathodes

Yamaguchi, Hisato*; Yusa, Ryunosuke*; Wang, G.*; Pettes, M. T.*; Liu, F.*; Tsuda, Yasutaka; Yoshigoe, Akitaka; Abukawa, Tadashi*; Moody, N. A.*; Ogawa, Shuichi*

Applied Physics Letters, 122(14), p.141901_1 - 141901_7, 2023/04

https://doi.org/10.1063/5.0142591

A lowering of work function for LaB by monolayer hexagonal BN coating is reported. Photoemission electron microcopy (PEEM) and thermionic emission electron microscopy (TEEM) both revealed that the hBN coated region of a LaB(100) single crystal has lower work function compared to the bare (i.e., non-coated) and graphene coated regions. A larger decrease of work function for the hBN coated LaB(100) compared to graphene coated LaB(100) was qualitatively supported by our density functional theory (DFT) calculations. Adding an oxide layer in the calculations improved consistency between the calculation and experimental results. We followed up our calculations with synchrotron-radiation X-ray photoelectron spectroscopy (SR-XPS) and confirmed the presence of an oxide layer on our LaB.

Evaluation of doped potassium concentrations in stacked two-Layer graphene using real-time XPS

Ogawa, Shuichi*; Tsuda, Yasutaka; Sakamoto, Tetsuya*; Okigawa, Yuki*; Masuzawa, Tomoaki*; Yoshigoe, Akitaka; Abukawa, Tadashi*; Yamada, Takatoshi*

Applied Surface Science, 605, p.154748_1 - 154748_6, 2022/12

https://doi.org/10.1016/j.apsusc.2022.154748

Immersion of graphene in KOH solution improves its mobility on SiO/Si wafers. This is thought to be due to electron doping by modification with K atoms, but the K atom concentration C in the graphene has not been clarified yet. In this study, the C was determined by XPS analysis using high-brilliance synchrotron radiation. The time evolution of C was determined by real-time observation, and the C before irradiation of synchrotron radiation was estimated to be 0.94%. The C 1s spectrum shifted to the low binding energy side with the desorption of K atoms. This indicates that the electron doping concentration into graphene is decreasing, and it is experimentally confirmed that K atoms inject electrons into graphene.

Observation of chemisorbed O molecule at SiO/Si(001) interface during Si dry oxidation

Tsuda, Yasutaka; Yoshigoe, Akitaka; Ogawa, Shuichi*; Sakamoto, Tetsuya*; Takakuwa, Yuji*

e-Journal of Surface Science and Nanotechnology (Internet), 21(1), p.30 - 39, 2022/11

https://doi.org/10.1380/ejssnt.2023-005

High reactivity of HO vapor on GaN surfaces

Sumiya, Masatomo*; Sumita, Masato*; Tsuda, Yasutaka; Sakamoto, Tetsuya; Sang, L.*; Harada, Yoshitomo*; Yoshigoe, Akitaka

Science and Technology of Advanced Materials, 23(1), p.189 - 198, 2022/00

https://doi.org/10.1080/14686996.2022.2052180

GaN is an attracting material for power-electronic devices. Understanding the oxidation at GaN surface is important for improving metal-oxide-semiconductor (MOS) devices. In this study, the oxidation at GaN surfaces depending on the GaN crystal planes (+c, -c, and m-plane) was investigated by real time XPS and DFT-MD simulation. We found that HO vapor has the highest reactivity due to the spin interaction between HO and GaN surfaces. The bond length between the Ga and N on the -c GaN surface was increased by OH attacking the back side of three-fold Ga atom. The chemisorption on the m-plane was dominant. The intense reactions of oxidation and AlGaN formation for p-GaN were observed at the interface of the AlO layer deposited by ALD using HO vapor. This study suggests that an oxidant gas other than HO and O should be used to avoid unintentional oxidation during AlGaN atomi layer deposition.

Oxidation of anatase TiO(001) surface using supersonic seeded oxygen molecular beam

Katsube, Daiki*; Ono, Shinya*; Takayanagi, Shuhei*; Ojima, Shoki*; Maeda, Motoyasu*; Origuchi, Naoki*; Ogawa, Arata*; Ikeda, Natsuki*; Aoyagi, Yoshihide*; Kabutoya, Yuito*; et al.

Langmuir, 37(42), p.12313 - 12317, 2021/10

https://doi.org/10.1021/acs.langmuir.1c01752

We investigated the oxidation of oxygen vacancies at the surface of anatase TiO(001) using supersonic seeded molecular beam (SSMB) of oxygen. The oxygen vacancies at the top-surface and sub-surface could be eliminated by the supply of oxygen using an SSMB. These results indicate that the interstitial vacancies can be mostly assigned to oxygen vacancies, which can be effectively eliminated by using an oxygen SSMB. Oxygen vacancies are present on the surface of anatase TiO(001) when it is untreated before transfer to a vacuum chamber. These vacancies, which are stable in the as-grown condition, could also be effectively eliminated using the oxygen SSMB.

Oxidation processes of copper-gold alloy surface induced by supersonic oxygen molecular beam

Okada, Michio*; Tsuda, Yasutaka*; Yoshigoe, Akitaka; Dio, W. A.*

Do To Dogokin, 56(1), p.232 - 236, 2017/00

We reported the our studies on the surface temperature (Ts) dependence of oxidation on the CuAu(111) surface by a supersonic O molecular beam, using synchrotron radiation X-ray photoemission spectroscopy. Clean surface shows strong Au segregation to the top layer, i.e., Au surface enrichment of the clean surface. Complete Cu segregation to the surface occurs at 0.5 ML O surface coverage. The Au-rich second and third layers of the oxidized surface demonstrate the protective layer formation against oxidation deeper into the bulk. We found that CuO formation occurs. At Ts = 300K, the CuO growth is not so effective. The surface oxidation is less effective on CuAu(111) than on Cu(111). At Ts = 400K, the protection by the Au-rich layer against oxidation into bulk is effective. At Ts = 500K, the Au protective layer is broken due to effective Au diffusion and thus CuO grows deeper into bulk.