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Journal Articles

Transient ionization of the mesosphere during auroral breakup; Arase satellite and ground-based conjugate observations at Syowa Station

Kataoka, Ryuho*; Nishiyama, Takanori*; Tanaka, Yoshimasa*; Kadokura, Akira*; Uchida, Herbert Akihito*; Ebihara, Yusuke*; Ejiri, Mitsumu*; Tomikawa, Yoshihiro*; Tsutsumi, Masaki*; Sato, Kaoru*; et al.

Earth, Planets and Space (Internet), 71(1), p.9_1 - 9_10, 2019/12

 Times Cited Count:7 Percentile:40.92(Geosciences, Multidisciplinary)

Transient ionization of the mesosphere was detected at around 65 km altitude during the isolated auroral expansion occurred at 2221-2226 UT on June 30, 2017. A general-purpose Monte Carlo particle transport code PHITS suggested that significant ionization is possible in the middle atmosphere due to auroral X-rays from the auroral electrons of $$<$$10 keV.

Journal Articles

$$E_1/E_2$$ traps in 6H-SiC studied with Laplace deep level transient spectroscopy

Koizumi, Atsushi*; Markevich, V. P.*; Iwamoto, Naoya; Sasaki, Sho*; Oshima, Takeshi; Kojima, Kazutoshi*; Kimoto, Tsunenobu*; Uchida, Kazuo*; Nozaki, Shinji*; Hamilton, B.*; et al.

Applied Physics Letters, 102(3), p.032104_1 - 032104_4, 2013/01

 Times Cited Count:11 Percentile:44.27(Physics, Applied)

Journal Articles

Defects in an electron-irradiated 6H-SiC diode studied by alpha particle induced charge transient spectroscopy; Their impact on the degraded charge collection efficiency

Iwamoto, Naoya*; Koizumi, Atsushi*; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Uchida, Kazuo*; Nozaki, Shinji*

Materials Science Forum, 717-720, p.267 - 270, 2012/05

 Times Cited Count:1 Percentile:54.91

In this study, we carried out an attempt to identify the defects responsible for the degraded charge collection efficiency of the 6H-SiC p$$^{+}$$n diode irradiated with 1 MeV electrons by the alpha particle induced charge transient spectroscopy. To form defects in the SiC crystal, one of the diodes was irradiated with 1 MeV electrons at a fluence of 1$$times$$10$$^{15}$$ /cm$$^{2}$$. Collected charges of the diodes were measured in room temperature using 5.486 MeV alpha particles from $$^{241}$$Am source. After the electron irradiation, the collected charge of the diode at a reverse bias of 100 V decreased to 84% of its initial value. In order to investigate the relationship between degradation of collected charge and defects in detail, time-dependent collected charges of the diodes were measured in temperature ranges from 170 K to 310 K. As a result, two distinct peaks labeled X$$_{1}$$ and X$$_{2}$$ are found for the electron-irradiated diode, and their activation energies are estimated to be 0.30 and 0.47 eV, respectively. These two peaks are considered to correspond to the defect levels introduced by the electron irradiation. In particular, when the diodes are used in room temperature, X$$_{2}$$ is more critical to the charge collection than X$$_{1}$$.

Journal Articles

Single-alpha-particle-induced charge transient spectroscopy of the 6H-SiC p$$^+$$n diode irradiated with high-energy electrons

Iwamoto, Naoya; Koizumi, Atsushi*; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Uchida, Kazuo*; Nozaki, Shinji*

IEEE Transactions on Nuclear Science, 58(6), p.3328 - 3332, 2011/12

 Times Cited Count:5 Percentile:38.79(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Transient analysis of an extended drift region in a 6H-SiC diode formed by a single alpha particle strike and its contribution to the increased charge collection

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

IEEE Transactions on Nuclear Science, 58(1), p.305 - 313, 2011/02

 Times Cited Count:10 Percentile:61.04(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Time-dependent collected charges of 6H-SiC p$$^+$$n diodes measured using alpha particles

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.222 - 225, 2010/10

Journal Articles

Charge collection efficiency of 6H-SiC P$$^{+}$$N diodes degraded by low-energy electron irradiation

Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

Materials Science Forum, 645-648, p.921 - 924, 2010/00

Electron irradiation effects on the charge collection efficiency (CCE) of the 6H-SiC p$$^{+}$$n diodes were investigated. The diodes were irradiated with electrons at energies from 100 keV to 1 MeV. The value of CCE of the diodes using alpha particles compared before and after the electron irradiations. In the case of 100 keV electron, no significant change in CCE was observed. On the other hand, above 200 keV, the values of CCE decreased with increasing fluence. The degradation was larger with increasing incident electron energy.

Journal Articles

Application of real time PCR for the quantitative detection of radiation-induced genomic DNA strand breaks

Yamauchi, Emiko*; Watanabe, Ritsuko; Oikawa, Miyoko*; Fujimoto, Hirofumi*; Yamada, Akinori*; Saito, Kimiaki; Murakami, Masahiro*; Hashido, Kazuo*; Tsuchida, Kozo*; Takada, Naoko*; et al.

Journal of Insect Biotechnology and Sericology, 77(1), p.17 - 24, 2008/02

The frequency of single strand breaks (SSBs) occurring on both strands of the pBR322 plasmid DNA region flanked by a pair of primers used for polymerase chain reaction (PCR) amplifications was determined after irradiation with $$^{137}$$Cs $$gamma$$-rays. We refined that real time PCR is suitable for the detection and quantitative analysis of SSBs caused by $$gamma$$-ray irradiation. The utility of this approach was also supported by the comparison of the practical experimental data with the Monte Carlo simulation. The potential application of this PCR method for the detection of genomic DNA damage was also confirmed.

JAEA Reports

Example of answers to the problems of 31st to 35th examinations for the chief engineer of nuclear fuel, 1999 to 2003

Yachi, Shigeyasu; Sato, Tadashi; Suga, Shinichi*; Komuro, Yuichi; Uchida, Masaaki; Nakajima, Kunihisa; Nakamura, Jinichi; Amezawa, Hiroo; Omura, Hideaki*; Minato, Kazuo; et al.

JAERI-Review 2003-025, 162 Pages, 2003/09

JAERI-Review-2003-025.pdf:5.96MB

The report contains example of answers to the Problems of 31st(1999) to 35th(2003) Examinations for the Chief Engineer of Nuclear Fuel which were conducted as a national qualification examination. Brief explanations or references are given to some answers.

JAEA Reports

Example of answers to problems of the 22nd$$sim$$25th examination for the chief technician of nuclear fuel

Uchida, Masaaki; ; Arai, Yasuo; Minato, Kazuo; ; Takada, Kazuo; Ikawa, Katsuichi

JAERI-Review 94-001, 94 Pages, 1994/08

JAERI-Review-94-001.pdf:2.74MB

no abstracts in English

Oral presentation

TOF mass spectrometry of secondary ions from HOPG target bombarded by fast cluster ion beams

Shibata, Hiromi*; Tsuchida, Hidetsugu*; Ito, Akio*; Saito, Yuichi; Chiba, Atsuya; Narumi, Kazumasa; Arakawa, Kazuo

no journal, , 

no abstracts in English

Oral presentation

Decreases in charge collection efficiencies of 6H-SiC diodes due to low-energy electron irradiations

Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Relationship between decrease in charge collection efficiency of 6H-SiC pn diodes and energy of electron irradiation

Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Effects of electron irradiation induced defects on the transient charge collections of SiC diodes

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Defects characterization of 6H-SiC p$$^+$$n diode by laplace transform DLTS

Koike, Shumpei*; Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Ono, Hiroshi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Characterization of defects in SiC diodes using alpha particles

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Observation of negative-U centers in n-type 6H-SiC using laplace DLTS

Koizumi, Atsushi*; Markevich, V. P.*; Iwamoto, Naoya; Sasaki, Sho*; Koike, Shumpei*; Oshima, Takeshi; Kojima, Kazutoshi*; Kimoto, Tsunenobu*; Uchida, Kazuo*; Nozaki, Shinji*; et al.

no journal, , 

no abstracts in English

Oral presentation

Defects characterization of 4H-SiC p$$^+$$n diode by laplace DLTS

Koike, Shumpei*; Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Ono, Hiroshi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Accelerator based BNCT using solid Li target at OIST

Matsumoto, Hiroshi*; Suzuki, Fumiko*; Sugawara, Hirotaka*; Yoshioka, Masakazu*; Higashi, Yasuo*; Matsumoto, Noriyuki*; Hasegawa, Kazuo; Kondo, Yasuhiro; Uchida, Kazuhide*; Kurokawa, Shinichi*

no journal, , 

19 (Records 1-19 displayed on this page)
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