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Journal Articles

Design and fabrication of novel photonic crystal waveguide consisting of Si-ion implanted SiO$$_{2}$$ layers

Umenyi, A. V.*; Hommi, Masashi*; Kawashiri, Shinya*; Shinagawa, Teruyoshi*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Inoue, Aichi; Yoshikawa, Masahito

Key Engineering Materials, 459, p.168 - 172, 2011/04

A new type of two-dimensional photonic crystal (2-D PhC) waveguide was designed using finite difference time domain method to operate at a wavelength of 1.55 $$mu$$m applicable to optical fiber-communication systems. We estimated that a triangular-lattice 2-D PhC structure formed by air holes with a diameter of 465 nm and a period of 664 nm suit our purpose. To form a core of the waveguide, Si ions were implanted into a SiO$$_{2}$$ layer by using a 400-kV ion implanter. The implantation energy was 80 keV and the implantation amount was 1$$times$$10$$^{17}$$ ions/cm$$^{2}$$. The electron beam resist was spin-coated on a substrate and the designed pattern was written lithographically in the resist using Electron Beam. Atomic force microscope measurements revealed that the diameter and the period of air holes of the waveguide were 466 and 666 nm. These values were nearly equal to the designed ones. We thus succeeded in fabricating 2-D PhC waveguides in a Si-ion-implanted SiO$$_{2}$$ layer.

Oral presentation

UV and visible light emitting fused-silica substrates fabricated by Si-ion implantation

Umenyi, A. V.*; Hommi, Masashi*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Inoue, Aichi; Yoshikawa, Masahito

no journal, , 

Various works on silicon (Si)-based luminescent materials utilizing the quantum confinement effect, such as Si nanocrystals (Si-NC's), have been reported. Typical fabrication methods of Si-NC's are co-sputtering of Si and SiO$$_{2}$$, Si-ion implantation into SiO$$_{2}$$ plates, and so on. In this work, we observed ultraviolet (UV)-light emission from Si-ion-implanted fused-silica substrates under different implanting conditions. The implantation energy was 80 keV, and the implantation amount was 2$$times$$10$$^{17}$$ ions/cm$$^{2}$$. The Si-implanted substrates were annealed at 1100$$sim$$1250$$^{circ}$$C. Photoluminescence (PL) spectra were measured with excitation using a He-Cd laser. UV-PL spectra having peaks around a wavelength of 370 nm were observed from all the samples. The UV-peak wavelengths of the samples are almost the same in spite of the various annealing temperatures. Si-ion-implanted fused-silica are expected to be useful as light sources for next-generation optical-disk systems.

Oral presentation

Fabrication and evaluation of light-emitting SiO$$_{2}$$ substrates implanted with Ge ions

Shinagawa, Teruyoshi*; Umenyi, A. V.*; Kikuchi, Shusuke*; Aiba, Mizuki*; Inada, Kazuki*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yoshikawa, Masahito

no journal, , 

Light emission between ultraviolet and blue from SiO$$_{2}$$ substrates implanted with Ge ions in comparatively shallow depth ($$sim$$100 nm) has been reported. In this paper, we report the photoluminescence (PL) properties of SiO$$_{2}$$ substrates implanted with Ge ions deeper than previous works ($$sim$$200 nm depth) in order to enlarge the spot size of the photonic crystals waveguides. Ge ions were implanted into an SiO$$_{2}$$ substrate with 350 keV, and the implantation amount was 1$$times$$10$$^{17}$$ ions/cm$$^{2}$$. PL peaks around a wavelength of 400 nm were observed. Stronger PL peaks were measured after annealing (900 $$^{circ}$$C), which confirmed an effect of improving the emission intensity by the annealing process. Though Ge ions were implanted more deeply than the earlier reported depth, similar results were confirmed. The expectation for a new light-emitting waveguide device that combines Ge-ion-implanted SiO$$_{2}$$ substrates with photonic crystal characteristics has risen.

Oral presentation

Fabrication and evaluation of light-emitting SiO$$_{2}$$ substrate co-implanted with Si and C ions

Kikuchi, Shusuke*; Umenyi, A. V.*; Inada, Kazuki*; Kawashima, Akihiro*; Noguchi, Katsuya*; Sasaki, Tomoyuki*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro; et al.

no journal, , 

Light emission around a wavelength ($$lambda$$) of 500 nm from SiO$$_{2}$$ substrates implanted with Si and C ions and annealed at 1100$$^{circ}$$C has been reported. In this report, we investigated photoluminescence (PL) properties of SiO$$_{2}$$ substrates implanted with Si and C ions and annealed at the lower temperature of 700$$^{circ}$$C. PL peaks by Si-ion implantation were observed around $$lambda$$ = 650 nm, and PL peaks by C-ion implantation were observed around $$lambda$$ = 450 nm from SiO$$_{2}$$ substrates annealed at 700$$^{circ}$$C. The PL peak wavelength became shorter by increasing the ratio of C to Si ions. Consequently, it was confirmed that it is possible to control the emission wavelength by the ratio of C to Si ions. Our samples showed typical light-emission though the annealing temperature was lower than the temperature reported by other groups.

Oral presentation

Development of fabrication technique of optical devices using ion beam

Miura, Kenta*; Umenyi, A. V.*; Hanaizumi, Osamu*; Sato, Takahiro; Ishii, Yasuyuki; Okubo, Takeru; Yamazaki, Akiyoshi; Koka, Masashi; Yokoyama, Akihito; Kada, Wataru; et al.

no journal, , 

no abstracts in English

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