Design and manufacture of synchrotron radiation beamline for high speed etching with XeF

Nakai, Tadafumi*; Uno, Hidetaka*; Zhang, Z.*; Tero, Ryogo*; Suzui, Koichi*; Teraoka, Yuden; Yoshigoe, Akitaka; Makinura, Tetsuya*; Murakami, Koichi*; Urisu, Tsuneo*

no journal, , 

A synchrotron radiation beamline has been designed and manufactured at UVSOR facilities in Institute for Molecular Science to achieve high speed etching of Si by simultaneous irradiation of white synchrotron radiation and XeF molecules. A previously-found beamline was modified by a differential pumping system. A new experimental apparatus was manufactured. In that apparatus, a silicon wafer, exposed to XeF molecules sublimated from the solid, was irradiated by the white synchrotron radiation to be etched with a high speed. This high speed etching phenomenon is due to desorption of silicon fluorides formed by a surface reaction of silicon and fluorin atoms from the XeF molecules.