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Journal Articles

Charge enhancement effects in 6H-SiC MOSFETs induced by heavy ion strike

Onoda, Shinobu; Makino, Takahiro; Iwamoto, Naoya*; Vizkelethy, G.*; Kojima, Kazutoshi*; Nozaki, Shinji*; Oshima, Takeshi

IEEE Transactions on Nuclear Science, 57(6), p.3373 - 3379, 2010/12

no abstracts in English

Journal Articles

Enhanced charge collection in drain contact of 6H-SiC MOSFETs induced by heavy ion microbeam

Onoda, Shinobu; Vizkelethy, G.*; Makino, Takahiro; Iwamoto, Naoya; Kojima, Kazutoshi*; Nozaki, Shinji*; Oshima, Takeshi

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.230 - 233, 2010/10

Journal Articles

Change in ion beam induced current from Si metal-oxide-semiconductor capacitors after $$gamma$$-ray irradiation

Oshima, Takeshi; Onoda, Shinobu; Hirao, Toshio; Takahashi, Yoshihiro*; Vizkelethy, G.*; Doyle, B. L.*

AIP Conference Proceedings 1099, p.1014 - 1017, 2009/03

https://doi.org/10.1063/1.3119985

Metal-Oxide-Semiconductor (MOS) capacitors were made on both n- and p-type Si substrates (n-MOS, and p-MOS). These MOS capacitors were irradiated with $$gamma$$-rays at a dose of 6.3 kGy (SiO$$_{2}$$) at room temperature. The capacitance-voltage characteristics for MOS capacitors were measured before and after irradiation. The flat band shift for n-MOS and p-MOS capacitors due to $$gamma$$-ray irradiation was -12.3 V and -15.2 V, respectively. As for the generation of interface traps, the values for n-MOS and p-MOS capacitors were estimated to be 0.5$$times$$10$$^{11}$$ and 1.7$$times$$10$$^{11}$$/cm$$^{2}$$, respectively. Transient Ion Beam Induced Current (TIBIC) obtained from these MOS capacitors were compared before and after $$gamma$$-ray irradiation. For n-MOS capacitors, the peak height of TIBIC signals decreased after $$gamma$$-ray irradiation. On the other hand, the peak height of TIBIC signals for p-MOS capacitors increased after $$gamma$$-ray irradiation. The applied bias dependence of the peak height of TIBIC signals for MOS capacitors irradiated with $$gamma$$-rays can be matched to that for ones before $$gamma$$-rays irradiation by shifting the voltage by -13 V for n-MOS capacitors and by -15 V for p-MOS capacitors. These voltage values are in good agreement with the flat band voltage shifts due to $$gamma$$-ray irradiation. Since flat band shift occurs due to the generation of positive charge trapped in gate oxide, the change in TIBIC signals observed for MOS capacitors due to $$gamma$$-ray irradiation can be interpreted in terms of positive charge generated in oxide.

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