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-forbidden 1/2
3/2 
transition in 
SnLic
, R.*; Mach, H.*; Fraile, L. M.*; Gargano, A.*; Borge, M. J. G.*; Mrginean, N.*; Sotty, C. O.*; Vedia, V.*; Andreyev, A. N.; Benzoni, G.*; et al.
Physical Review C, 93(4), p.044303_1 - 044303_7, 2016/04
Times Cited Count：5 Percentile：39.53(Physics, Nuclear)Sato, Shinichiro; Schmieder, K. J.*; Hubbard, S. M.*; Forbes, D. V.*; Warner, J. H.*; Oshima, Takeshi; Walters, R. J.*
Proceedings of 42nd IEEE Photovoltaic Specialists Conference (PVSC-42) (CD-ROM), 5 Pages, 2015/06
GaAs pn-junction diodes with embedded InAs quantum dots (QDs) are irradiated with protons and the generated deep level traps are investigated using Deep Level Transient Spectroscopy (DLTS). The results are compared to GaAs pn-junction diodes without QDs in order to identify the origin of the deep level traps. The fluence dependence of trap density is investigated, and it is shown that majority carrier traps induced by irradiation increase in proportion to the fluence whereas the EL2 trap, which appears before irradiation, is not affected by irradiation. In addition, minority carrier traps in the QD layer and electron/hole emission from QD levels are investigated by various reverse bias and pulse voltage conditions.
NiChiara, C. J.*; Weisshaar, D.*; Janssens, R. V. F.*; Tsunoda, Yusuke*; Otsuka, Takaharu*; Harker, J. L.*; Walters, W. B.*; Recchia, F.*; Albers, M.*; Alcorta, M.*; et al.
Physical Review C, 91(4), p.044309_1 - 044309_10, 2015/04
Times Cited Count：39 Percentile：91.59(Physics, Nuclear)The neutron-rich isotope Ni was produced by multi-nucleon transfer reactions of Zn in the Argonne National Laboratory, and an in-beam 
-ray experiment were performed using the GRETINA array. The 
and 
levels of Ni were observed for the first time. Those levels are regarded as large deformed states associated with proton excitation from the 
orbit because they cannot be reproduced by a shell-model calculation assuming a small valence space without . A theoretical analysis based on the Monte Carlo shell model published in 2014 indicates that those levels corresponds to a prolate deformed band. The present result demonstrates the occurrence of shape coexistence in neutron-rich Ni isotopes other than a known case of 
Ni, and confirms the predictive power of the Monte Carlo shell-model calculation.
Maximenko, S.*; Lumb, M.*; Hoheisel, R.*; Gonz
lez, M.*; Scheiman, D.*; Messenger, S.*; Tibbits, T. N. D.*; Imaizumi, Mitsuru*; Oshima, Takeshi; Sato, Shinichiro; et al.
Proceedings of 40th IEEE Photovoltaic Specialists Conference (PVSC-40) (CD-ROM), p.2144 - 2148, 2014/06
In this paper, a complex analysis of the radiation response of GaAs solar cells with multi quantum wells (MQW) incorporated in the i-region of the device is presented. Electronic transport properties of the MQW i-region were assessed experimentally by the electron beam induced current (EBIC) technique. A 2-D EBIC diffusion model was applied to simulate EBIC line scans across device structure for different radiation doses. The results are interpreted using numerical modeling of the electrical field distribution at different radiation levels. Type conversion from n- to p-type was found in MQW i-region at displacement damage dose as low as low as 1
MeV MeV/g. This is supported by experimental and simulated EBIC and electric field distribution results.
Hoheisel, R.*; Gonzlez, M.*; Lumb, M.*; Scheiman, D.*; Messenger, S. R.*; Bailey, C. G.*; Lorentzen, J.*; Tibbits, T. N. D.*; Imaizumi, Mitsuru*; Oshima, Takeshi; et al.
IEEE Journal of Photovoltaics, 4(1), p.253 - 259, 2014/01
Times Cited Count：19 Percentile：60.33(Energy & Fuels)Analysis on the radiation response of solar cells with multi quantum wells (MQW) included in the quasi-intrinsic region between the emitter and the base layer is presented. We found that in the case of MQW devices, carrier removal (CR) effects are also observed. Experimental measurements and numerical simulations reveal that with increasing radiation dose, CR can cause the initially quasi-intrinsic background doping of the MQW region to become specifically n- or p-type. This can result in a significant narrowing and even the collapse of the electric field between the emitter and the base where the MQWs are located. The implications of the CR-induced modification of the electric field on the current-voltage characteristics and on the collection efficiency of carriers generated within the emitter, the MQW region, and the base are discussed for different radiation dose conditions. This paper concludes with a discussion of improved radiation hard MQW device designs.
Gonzlez, M.*; Hoheisel, R.*; Lumb, M.*; Scheiman, D.*; Bailey, C. G.*; Lorentzen, J.*; Maximenko, S.*; Messenger, S. R.*; Jenkins, P. P.*; Tibbits, T. N. D.*; et al.
Proceedings of 39th IEEE Photovoltaic Specialists Conference (PVSC-39) (CD-ROM), p.3233 - 3236, 2013/06
The radiation response of multi quantum wall (MQW) triple junction and component cells was analyzed. Initial results show that for 1MeV electron irradiation the middle MQW cell governs the degradation of the triple junction. This is attributed the specific middle cell design, in particular the thick 0.98 
m depletion region, and alternative, more radiation hard, designs are presented. Additionally, characterization studies, including dark IV, external quantum efficiency, electroluminescence, as well as defect characterization were investigated.
GeToh, Yosuke; Chiara, C. J.*; McCutchan, E. A.*; Walters, W. B.*; Janssens, R. V. F.*; Carpenter, M. P.*; Zhu, S.*; Broda, R.*; Fornal, B.*; Kay, B. P.*; et al.
Physical Review C, 87(4), p.041304_1 - 041304_5, 2013/04
Times Cited Count：81 Percentile：96.82(Physics, Nuclear)Excited states of Ge have been investigated via the Ge + 
U reaction with 
Ge
MeV by use of in-beam -ray spectroscopy using the sphere array. The band was extended considerably and one new band was identified. Comparisons of the band with collective- and shell-model calculations suggest that Ge may be a rare example of a nucleus exhibiting rigid triaxial deformation in the low-lying states.
Roach, C. M.*; Walters, M.*; Budny, R. V.*; Imbeaux, F.*; Fredian, T. W.*; Greenwald, M.*; Stillerman, J. A.*; Alexander, D. A.*; Carlsson, J.*; Cary, J. R.*; et al.
Nuclear Fusion, 48(12), p.125001_1 - 125001_19, 2008/12
Times Cited Count：35 Percentile：28.57(Physics, Fluids & Plasmas)This paper documents the public release PR08 of the International Tokamak Physics Activity profile database, which should be of particular interest to the magnetic confinement fusion community. Data from a wide variety of interesting discharges from many of the world's leading tokamak experiments are now made available in PR08, which also includes predictive simulations of an initial set of operating scenarios for ITER. In this paper we describe the discharges that have been included and the tools that are available to the reader who is interested in accessing and working with the data.
Hoheisel, R.*; Gonzlez, M.*; Lumb, M.*; Scheiman, D.*; Messenger, S. R.*; Bailey, C. G.*; Lorentzen, J.*; Tibbits, T. N. D.*; Imaizumi, Mitsuru*; Oshima, Takeshi; et al.
no journal, ,
In this paper a detailed analysis on the radiation response of solar cells with multi quantum-wells (MQW) included in the quasi-intrinsic region between the emitter and the base layer is presented. Whilst the primary source of radiation damage of photovoltaic devices is generally associated with minority carrier lifetime reduction, we found that in the case of MQW devices another effect of radiation damage, the so called carrier removal (CR) requires additional consideration. Experimental measurements and numerical simulations reveal that with increasing radiation dose, CR can alter the initially quasi-intrinsic background doping of the MQW region to become further n or p type. This can result in a significant narrowing and even in a collapse of the electrical field between the emitter and the base where the MQWs are located. Eventually, remarks for improved radiation hard MQW device designs are provided.
