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Komatsu, Yuya*; Shimizu, Ryota*; Sato, Ryuhei*; Wilde, M.*; Nishio, Kazunori*; Katase, Takayoshi*; Matsumura, Daiju; Saito, Hiroyuki*; Miyauchi, Masahiro*; Adelman, J. R.*; et al.
Chemistry of Materials, 34(8), p.3616 - 3623, 2022/04
Times Cited Count：9 Percentile：75.5(Chemistry, Physical)Komatsu, Yuya*; Shimizu, Ryota*; Wilde, M.*; Kobayashi, Shigeru*; Sasahara, Yuki*; Nishio, Kazunori*; Shigematsu, Kei*; Otomo, Akira*; Fukutani, Katsuyuki; Hitosugi, Taro*
Crystal Growth & Design, 20(9), p.5903 - 5907, 2020/09
Times Cited Count：5 Percentile：46.4(Chemistry, Multidisciplinary)
(101) surfaceNagatsuka, Naoki*; Wilde, M.*; Fukutani, Katsuyuki
Journal of Chemical Physics, 152(7), p.074708_1 - 074708_6, 2020/02
Times Cited Count：10 Percentile：59.98(Chemistry, Physical)Fujieda, Shinji*; Terai, Masayuki*; Saito, Motofumi*; Toda, Akio*; Miura, Yoshinao*; Liu, Z.*; Teraoka, Yuden; Yoshigoe, Akitaka; Wilde, M.*; Fukutani, Katsuyuki*
ECS Transactions, 6(3), p.185 - 202, 2007/00
In order to find how bias temperature instability occurs in advanced gate stacks, we will review experimental results of our investigation on SiO, plasma-nitrided SiON, HfSiON and HfSiON with Ni-silicide electrodes. It thus seems that we need to clarify and control the chemical and physical influences on the insulator bulk and the insulator/Si interface caused by newly incorporated materials and process technologies, in order to ensure the reliability of bias temperature instability for advanced gate stacks.
Wilde, M.*; Fukutani, Katsuyuki*; Moritani, Kosuke; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
Our previous real-time synchrotron X-ray photoelectron spectroscopy (XPS) investigations of the growth kinetics of ultra-thin AlO
films on NiAl(100) in O have revealed a strong acceleration of the oxidation reaction by water. To clarify the oxidation mechanism, the present study examines whether the growth rate acceleration by HO correlates with an increased oxide thickness, as would be expected within the Cabrera-Mott model at large surface hydroxyl (OH) coverages. We thus evaluate the saturation thickness of the AlO films from the take-off angle dependence of Al2p XPS emission signals from the oxide overlayer (Al
) and the metallic NiAl substrate (Al
). The results confirm our expectation that at temperatures where OH is stable on AlO, HO oxidation should yield slightly thicker AlO films than those grown in O. This confirms our hypothesis that the rate acceleration by HO below 500K is due to its ability to provide a higher stationary oxidant (OH) coverage than O. Consistent with the thermal stability of surface OH groups, the HO-related effects decrease at higher oxidation temperatures.
