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Iyota, Muneyoshi*; Matsuda, Tomoki*; Sano, Tomokazu*; Shigeta, Masaya*; Shobu, Takahisa; Yumoto, Hirokatsu*; Koyama, Takahisa*; Yamazaki, Hiroshi*; Semba, Yasunori*; Ohashi, Haruhiko*; et al.
Journal of Manufacturing Processes, 94, p.424 - 434, 2023/05
Times Cited Count:3 Percentile:57.26(Engineering, Manufacturing)Yoshida, Shogo*; Koyama, Takehide*; Yamada, Haruhiko*; Nakai, Yusuke*; Ueda, Koichi*; Mito, Takeshi*; Kitagawa, Kentaro*; Haga, Yoshinori
Physical Review B, 103(15), p.155153_1 - 155153_5, 2021/04
Times Cited Count:1 Percentile:0(Materials Science, Multidisciplinary)Yamada, Yoichi*; Mao, W.*; Asaoka, Hidehito; Yamamoto, Hiroyuki; Esaka, Fumitaka; Udono, Haruhiko*; Tsuru, Tomohito
Physics Procedia, 11, p.67 - 70, 2011/02
Times Cited Count:3 Percentile:82.2(Optics)Clean surfaces of the single crystalline -FeSi have been prepared and investigated. From XPS (X-ray Photoelectron Spectroscopy) measurements of the surface oxide, it is found that the surface Si is mainly oxidized while Fe isn't. After removing the surface oxide, clean surface can be obtained showing reasonable structure in LEED (Low-Energy Electron Diffraction) and STM (Scanning Tunneling Microscope). No drastic surface reconstruction is found reflecting strong Fe-Si bond. DFT (Density Functional Theory) calculation suggests the spin polarized surface DOS (Density Of State) when Fe comes at the surface.
Yamada, Yoichi; Wakaya, Ippei*; Ouchi, Shinji*; Yamamoto, Hiroyuki; Asaoka, Hidehito; Shamoto, Shinichi; Udono, Haruhiko*
Surface Science, 602(18), p.3006 - 3009, 2008/09
Times Cited Count:6 Percentile:30.34(Chemistry, Physical)Well-defined clean surfaces of single crystalline -FeSi have for the first time been prepared and characterized at the atomic scale. Surface oxide was removed by heating the crystal at 850 C in ultra-high vacuum (UHV), resulted in an atomically-flat, clean surface. Scanning tunneling microscope (STM) and low-energy electron diffraction (LEED) measurements reveal the absence of long-range surface reconstruction in the low-index (100), (101) and (110) surfaces, which is unique among compound semiconductors. However a significant number of surface defects could still be found within the clean surface. Characterizing and controlling of those surface defects will be necessary in order to use this material in applications.
Yamada, Yoichi; Yamamoto, Hiroyuki; Oba, Hironori; Sasase, Masato*; Esaka, Fumitaka; Yamaguchi, Kenji; Udono, Haruhiko*; Shamoto, Shinichi; Yokoyama, Atsushi; Hojo, Kiichi
Journal of Physics and Chemistry of Solids, 68(11), p.2204 - 2208, 2007/11
Times Cited Count:6 Percentile:31.31(Chemistry, Multidisciplinary)Si in natural Si has been widely used for a doping source, since Si can be transmuted into P by thermal neutron (Neutron Transmutation Doping, NTD). NTD of nanostructure fabricated from Si-enriched materials can serve as a controlled local doping method with tunable dopant concentration, which cannot be realized by conventional doping methods such as ion implantation. In the present study, Si-enriched thin film has been fabricated in order to demonstrate the local NTD. The Si-enriched film with thickness of 100 nm was deposited on the Si(100) substrate by plasma enhanced chemical vapor deposition using Si-enriched SiF as the source gases. The film contains 7.1 % of Si, which is twice higher than that of natural Si. Possible contaminant, fluorine, is lower than 0.6 at.% determined from X-ray photoelectron spectra. Nanostructure of films and changes of electronic properties by the neutron irradiation will also be discussed.
Tsuchiya, Kunihiko; Kikukawa, Akihiro*; Hoshino, Tsuyoshi; Nakamichi, Masaru; Yamada, Hirokazu*; Yamaki, Daiju; Enoeda, Mikio; Ishitsuka, Etsuo; Kawamura, Hiroshi; Ito, Haruhiko; et al.
Journal of Nuclear Materials, 329-333(Part2), p.1248 - 1251, 2004/08
Times Cited Count:10 Percentile:55.72(Materials Science, Multidisciplinary)no abstracts in English
Yamada, Hirokazu*; Nagao, Yoshiharu; Kawamura, Hiroshi; Nakao, Makoto*; Uchida, Munenori*; Ito, Haruhiko
Fusion Engineering and Design, 69(1-4), p.269 - 273, 2003/09
Times Cited Count:14 Percentile:66.94(Nuclear Science & Technology)no abstracts in English
Kawamura, Hiroshi; Kikukawa, Akihiro*; Tsuchiya, Kunihiko; Yamada, Hirokazu*; Nakamichi, Masaru; Ishitsuka, Etsuo; Enoeda, Mikio; Ito, Haruhiko
Fusion Engineering and Design, 69(1-4), p.263 - 267, 2003/09
Times Cited Count:3 Percentile:25.79(Nuclear Science & Technology)no abstracts in English
Kawamura, Hiroshi; Ishitsuka, Etsuo; Tsuchiya, Kunihiko; Nakamichi, Masaru; Uchida, Munenori*; Yamada, Hirokazu*; Nakamura, Kazuyuki; Ito, Haruhiko; Nakazawa, Tetsuya; Takahashi, Heishichiro*; et al.
Nuclear Fusion, 43(8), p.675 - 680, 2003/08
Times Cited Count:28 Percentile:64.08(Physics, Fluids & Plasmas)no abstracts in English
Yamada, Yoichi; Yamamoto, Hiroyuki; Oba, Hironori; Sasase, Masato*; Esaka, Fumitaka; Yamaguchi, Kenji; Udono, Haruhiko*; Shamoto, Shinichi; Yokoyama, Atsushi; Hojo, Kiichi
no journal, ,
Si in natural Si has been widely used for a doping source, since Si can be transmuted into P by thermal neutron (Neutron Transmutation Doping, NTD). NTD of nanostructure fabricated from Si-enriched materials can serve as a controlled local doping method with tunable dopant concentration, which cannot be realized by conventional doping methods such as ion implantation. In the present study, Si-enriched thin film has been fabricated in order to demonstrate the local NTD. The Si-enriched film with thickness of 100 nm was deposited on the Si(100) substrate by plasma enhanced chemical vapor deposition using Si-enriched SiF as the source gases. The film contains 7.1 % of Si, which is twice higher than that of natural Si. Possible contaminant, fluorine, is lower than 0.6 at.% determined from X-ray photoelectron spectra. Nanostructure of films and changes of electronic properties by the neutron irradiation will also be discussed.
Yamada, Yoichi; Yamamoto, Hiroyuki; Oba, Hironori; Sasase, Masato*; Esaka, Fumitaka; Yamaguchi, Kenji; Udono, Haruhiko*; Shamoto, Shinichi; Yokoyama, Atsushi; Hojo, Kiichi
no journal, ,
Si in natural Si has been widely used for a doping source, since Si can be transmuted into P by thermal neutron (Neutron Transmutation Doping, NTD). In the present study, Si-enriched thin film has been fabricated in order to demonstrate the local NTD. The Si-enriched film with thickness of 100 nm was deposited on the Si(100) substrate by plasma enhanced chemical vapor deposition using Si-enriched SiF as the source gases. Nanostructure of films and changes of electronic properties by the neutron irradiation will be discussed.
Yamada, Yoichi; Yamamoto, Hiroyuki; Oba, Hironori; Sasase, Masato*; Esaka, Fumitaka; Yamaguchi, Kenji; Udono, Haruhiko*; Shamoto, Shinichi; Yokoyama, Atsushi; Hojo, Kiichi
no journal, ,
Si in natural Si has been widely used for a doping source, since Si can be transmuted into P by thermal neutron (Neutron Transmutation Doping, NTD). In the present study, Si-enriched thin film has been fabricated in order to demonstrate the local NTD. The Si-enriched film with thickness of 100 nm was deposited on the Si(100) substrate by plasma enhanced chemical vapor deposition using Si-enriched SiF as the source gases. Nanostructure of films and changes of electronic properties by the neutron irradiation will be discussed.
Ouchi, Shinji*; Muroga, Masataka*; Udono, Haruhiko*; Yamada, Yoichi; Yamamoto, Hiroyuki; Kikuma, Isao*
no journal, ,
Thermal preannealing of single crystalline -FeSi substrate for MBE has been investigated to obtain better substrate for homo-epitaxial growth of -FeSi film.
Wakaya, Ippei*; Muroga, Masataka*; Ouchi, Shinji*; Udono, Haruhiko*; Yamada, Yoichi; Yamamoto, Hiroyuki; Kikuma, Isao*
no journal, ,
RHEED observation of surface has been performed on -FeSi single crystals.
Yamada, Yoichi; Yamamoto, Hiroyuki; Oba, Hironori; Sasase, Masato*; Esaka, Fumitaka; Yamaguchi, Kenji; Udono, Haruhiko*; Shamoto, Shinichi; Yokoyama, Atsushi; Hojo, Kiichi
no journal, ,
Fabrication and estimation of Si-enriched thin films for local neutron transmutation doping has been attempted.
Yamada, Yoichi; Yamamoto, Hiroyuki; Oba, Hironori; Sasase, Masato*; Esaka, Fumitaka; Udono, Haruhiko*; Yamaguchi, Kenji; Yokoyama, Atsushi; Hojo, Kiichi; Shamoto, Shinichi
no journal, ,
Neutron transmutation doping has been tried by using Si enriched thin film in order to fabricate nano doping devices.
Yamada, Yoichi; Wakaya, Ippei*; Ouchi, Shinji*; Yamamoto, Hiroyuki; Udono, Haruhiko*
no journal, ,
Preparation method of well defined -FeSi(110) single crystal surface has been investigated.
Ouchi, Shinji*; Wakaya, Ippei*; Udono, Haruhiko*; Yamada, Yoichi; Yamamoto, Hiroyuki; Esaka, Fumitaka
no journal, ,
Homoepitaxial formation of -FeSi thin films on various oriented substrates has been discussed.
Mao, W.; Wakaya, Ippei*; Yamada, Yoichi; Esaka, Fumitaka; Yamamoto, Hiroyuki; Shamoto, Shinichi; Yamaguchi, Kenji; Udono, Haruhiko*
no journal, ,
Thin films of semiconducting -FeSi keep attracting considerable attentions for their promising applicability to the Si-based optoelectronics devices. Recently, large single-crystalline -FeSi has successfully been synthesized, providing a substrate for a well-defined homoepitaxy film. As a first step toward good homoepitaxy of -FeSi, we prepare and characterize low-index surfaces of -FeSi single crystal. Both LEED and STM reveal the absence of the long-ranged surface reconstruction for each face, which is favorable for the homoepitaxy on this substrate. On the other hand, STM suggests a presence of a significant amount of surface defects for each face, which should be improved in the next step. In addition to structural analysis, the stoichiometry of clean surfaces will be discussed on the basis of XPS and SIMS measurements.
Wakaya, Ippei*; Ochiai, Kunihito*; Udono, Haruhiko*; Nagano, Takatoshi*; Yamada, Yoichi; Yamamoto, Hiroyuki; Esaka, Fumitaka
no journal, ,
Deposit condition in the first stage of -FeSi homoepitaxial growth has been investigated.
Yamada, Yoichi*; Wakaya, Ippei*; Ouchi, Shinji*; Udono, Haruhiko*; Tsuru, Tomohito; Esaka, Fumitaka; Yamamoto, Hiroyuki
no journal, ,
no abstracts in English