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4 surfaceTakahashi, Masamitsu; Yoneda, Yasuhiro; Yamamoto, Naomasa*; Mizuki, Junichiro
Physical Review B, 68(8), p.085321_1 - 085321_5, 2003/08
Times Cited Count：17 Percentile：62.72(Materials Science, Multidisciplinary)The 
, 
and 
phases of the GaAs(001)-24 surface have been investigated by 
surface X-ray diffraction in an As flux and at temperatures ranging from 480
C to 610C. It has been found that the fractional-order peaks originating from the fourfold symmetry show shift in the [110] direction as well as significant broadening of the peaks in the and phases. The direction of the peak shift is characteristic in each phase. This behavior is explained by the formation of the antiphase domain boundaries. The atomic structure of the domain boundaries is discussed.
Takahashi, Masamitsu; Yoneda, Yasuhiro; Inoue, Hirotane*; Yamamoto, Naomasa*; Mizuki, Junichiro
Journal of Crystal Growth, 251(1-4), p.51 - 55, 2003/04
Times Cited Count：3 Percentile：22.01(Crystallography)The reflection high energy electron diffraction (RHEED) oscillation has been widely adopted for studies on growth kinetics and dynamics in molecular beam epitaxy (MBE). Recent development in brilliant X-ray source has enabled similar experiments with X-rays, which has great advantage in a straightforward interpretation of results and in a high angular resolution. In general, the diffracted intensity from surface is proportional to the surface structure factor associated with the surface reconstruction, F, multiplied by a damping factor associated with the surface roughness, m. We show that the two factors, F and m, can be obtained separately by measuring diffuse scattering around the two-dimensional Bragg peak during growth.
Takahashi, Masamitsu; Yoneda, Yasuhiro; Inoue, Hirotane*; Yamamoto, Naomasa*; Mizuki, Junichiro
Japanese Journal of Applied Physics, Part 1, 41(10), p.6247 - 6251, 2002/10
Times Cited Count：55 Percentile：85.2(Physics, Applied)An X-ray diffractometer connected with a molecular-beam epitaxy (MBE) system has been constructed for in situ studies on the growing surfaces of III-V compound semiconductors. This diffractometer is based on the (4+2) type and equipped with an axis for rotating the receiving slit about the normal of the slit plane. This additional axis is used to align the resolution of the receiving slit properly for the surface X-ray diffraction measurement. For the alignment of the sample and the whole setup with respect to the X-ray beam, an XYZ-stage and an adjustable base plate are available. X-rays enter and leave the chamber through two cylindrical Be windows welded onto the MBE chamber. A graphite sheet which can be heated up to 250C is placed along the inside of the Be windows to protect the Be windows from being coated with evaporated materials. Preliminary data are presented to demonstrate the feasibility of static and dynamic measurements of growing surfaces using this instrument.
