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論文

Manipulation of saturation magnetization and perpendicular magnetic anisotropy in epitaxial Co$$_{x}$$Mn$$_{4-x}$$N films with ferrimagnetic compensation

伊藤 啓太*; 安富 陽子*; Zhu, S.*; Nurmamat, M.*; 田原 昌樹*; 都甲 薫*; 秋山 了太*; 竹田 幸治; 斎藤 祐児; 小口 多美夫*; et al.

Physical Review B, 101(10), p.104401_1 - 104401_8, 2020/03

 被引用回数:18 パーセンタイル:73.04(Materials Science, Multidisciplinary)

Spintronics devices utilizing a magnetic domain wall motion have attracted increasing attention, and ferrimagentic materials with almost compensated magnetic moments are highly required to realize the fast magnetic domain wall motion. Here, we report a key function for this purpose in anti-perovskite Co$$_{x}$$Mn$$_{4-x}$$N films. Perpendicular magnetization emerges for $$0.8 leq x$$, and the saturation magnetization reaches a minimum value at $$x = 0.8$$.

論文

X-ray magnetic circular dichroism for Co$$_{x}$$Fe$$_{4-x}$$N (x = 0, 3, 4) films grown by molecular beam epitaxy

伊藤 啓太*; 佐内 辰徳*; 安富 陽子*; Zhu, S.-Y.*; 都甲 薫*; 竹田 幸治; 斎藤 祐児; 木村 昭夫*; 末益 崇*

Journal of Applied Physics, 115(17), p.17C712_1 - 17C712_3, 2014/05

 被引用回数:18 パーセンタイル:60.33(Physics, Applied)

We evaluated orbital ($$m_{rm orb}$$) and spin magnetic moments ($$m_{rm spin}$$) of Co$$_{x}$$Fe$$_{4-x}$$N (x = 0, 3, 4) epitaxial thin films grown by molecular beam epitaxy using X-ray magnetic circular dichroism, and discussed the dependence of these values on x. Site-averaged $$m_{rm spin}$$ value of Fe atoms was deduced to be 1.91 $$mu$$$$_{B}$$ per atom, and that of Co atoms to be 1.47 $$mu$$$$_{B}$$ per atom in Co$$_{3}$$FeN at 300 K. These values are close to 1.87 $$mu$$$$_{B}$$ per Fe atom in Fe$$_{4}$$N and 1.43 $$mu$$$$_{B}$$ per Co atom in Co$$_{4}$$N, respectively. This result implies that the Fe and Co atoms in the Co$$_{3}$$FeN films were located both at corner and face-centered sites in the anti-perovskite lattice. Spin magnetic moments per unit cell were decreased linearly with increasing x in Co$$_{x}$$Fe$$_{4-x}$$N. This tendency is in good agreement with theory predicted by the first-principle calculation.

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