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伊藤 啓太*; 安富 陽子*; Zhu, S.*; Nurmamat, M.*; 田原 昌樹*; 都甲 薫*; 秋山 了太*; 竹田 幸治; 斎藤 祐児; 小口 多美夫*; et al.
Physical Review B, 101(10), p.104401_1 - 104401_8, 2020/03
被引用回数:18 パーセンタイル:73.04(Materials Science, Multidisciplinary)Spintronics devices utilizing a magnetic domain wall motion have attracted increasing attention, and ferrimagentic materials with almost compensated magnetic moments are highly required to realize the fast magnetic domain wall motion. Here, we report a key function for this purpose in anti-perovskite CoMnN films. Perpendicular magnetization emerges for , and the saturation magnetization reaches a minimum value at .
伊藤 啓太*; 佐内 辰徳*; 安富 陽子*; Zhu, S.-Y.*; 都甲 薫*; 竹田 幸治; 斎藤 祐児; 木村 昭夫*; 末益 崇*
Journal of Applied Physics, 115(17), p.17C712_1 - 17C712_3, 2014/05
被引用回数:18 パーセンタイル:60.33(Physics, Applied)We evaluated orbital () and spin magnetic moments () of CoFeN (x = 0, 3, 4) epitaxial thin films grown by molecular beam epitaxy using X-ray magnetic circular dichroism, and discussed the dependence of these values on x. Site-averaged value of Fe atoms was deduced to be 1.91 per atom, and that of Co atoms to be 1.47 per atom in CoFeN at 300 K. These values are close to 1.87 per Fe atom in FeN and 1.43 per Co atom in CoN, respectively. This result implies that the Fe and Co atoms in the CoFeN films were located both at corner and face-centered sites in the anti-perovskite lattice. Spin magnetic moments per unit cell were decreased linearly with increasing x in CoFeN. This tendency is in good agreement with theory predicted by the first-principle calculation.