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Journal Articles

Electrical characteristics of interface defects in oxides grown at 1200 $$^{circ}$$C in dry oxygen ambient on silicon carbide and their thermal annealing effects

Yoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C, 86(4), p.426 - 433, 2003/04

no abstracts in English

Journal Articles

X-ray photoelectron spectroscopy studies of post-oxidation process effects on oxide/SiC interfaces

Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Yoshida, Sadafumi*

Materials Science Forum, 389-393, p.1033 - 1036, 2002/05

no abstracts in English

Journal Articles

Measurements of the depth profile of the refractive indices in oxide films on SiC by spectroscopic ellipsometry

Iida, Takeshi*; Tomioka, Yuichi*; Yoshimoto, Kimihiro*; Midorikawa, Masahiko*; Tsukada, Hiroyuki*; Orihara, Misao*; Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Ito, Hisayoshi; et al.

Japanese Journal of Applied Physics, Part 1, 41(2A), p.800 - 804, 2002/02

 Times Cited Count:15 Percentile:53.6(Physics, Applied)

no abstracts in English

Journal Articles

Study of residual defects in ion-implanted and subsequently annealed 3C-SiC

Oshima, Takeshi; Ito, Hisayoshi; Uedono, Akira*; Suzuki, Ryoichi*; Ishida, Yuki*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Kojima, Kazutoshi; Odaira, Toshiyuki*; Nashiyama, Isamu; et al.

Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.469 - 476, 1999/00

no abstracts in English

Journal Articles

Characterization of point defects in cubic silicon carbide using positron annihilation

Ito, Hisayoshi; Kawasuso, Atsuo; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okada, Sohei; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*

Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.23 - 29, 1999/00

no abstracts in English

Journal Articles

Investigation of positron moderator materials for electron-linac-based slow positron beamlines

Suzuki, Ryoichi*; *; Uedono, Akira*; Y.K.Cho*; Yoshida, Sadafumi*; Ishida, Yuki*; Oshima, Takeshi; Ito, Hisayoshi; *; Mikado, Tomohisa*; et al.

Japanese Journal of Applied Physics, Part 1, 37(8), p.4636 - 4643, 1998/08

 Times Cited Count:24 Percentile:71.47(Physics, Applied)

no abstracts in English

Journal Articles

Effects of gamma-ray irradiation and the mechanisms on electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; *; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C-II, 81(1), p.140 - 150, 1998/01

no abstracts in English

Journal Articles

Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance

Kawasuso, Atsuo; Morishita, Norio; Oshima, Takeshi; Okada, Sohei; Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; Yoshida, Sadafumi*; Okumura, Hajime*

Applied Physics A, 67(2), p.209 - 212, 1998/00

 Times Cited Count:39 Percentile:82.57(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Effects of $$gamma$$-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Y.*; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Electronics and Communication in Japan., Part2, 81(10), p.37 - 47, 1998/00

no abstracts in English

Journal Articles

Scandium and gallium implantation doping of silicon carbide

T.Henkel*; *; *; I.Koutzarov*; Okumura, Hajime*; Yoshida, Sadafumi*; Oshima, Takeshi

Mat. Res. Soc. Symp. Proc., 512, p.163 - 168, 1998/00

no abstracts in English

Journal Articles

Study of thermal annealing of vacancies in ion implanted 3C-SiC by positron annihilation

Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Abe, Koji*; Suzuki, Ryoichi*; *; Aoki, Yasushi; Tanigawa, Shoichiro*; Yoshikawa, Masahito; Mikado, Tomohisa*; et al.

Mater. Sci. Forum, 264-268, p.745 - 748, 1998/00

no abstracts in English

Journal Articles

Generation mechanisms of trapped charges in oxide layers of 6H-SiC MOS structures irradiated with $$gamma$$-rays

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; *; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Mater. Sci. Forum, 264-268, p.1017 - 1020, 1998/00

no abstracts in English

Journal Articles

Improvement of SiO$$_{2}$$/4H-SiC interface by using high temperature hydrogen annealing at 1000$$^{circ}$$C

Fukuda, Kenji*; Nagai, Kiyoko*; Sekigawa, Toshihiro*; Yoshida, Sadafumi*; Arai, Kazuo*; Yoshikawa, Masahito

Proceedings of 1998 International Conference on Solid State Devices and Materials (SSDM 1998), p.100 - 101, 1998/00

no abstracts in English

Journal Articles

Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Abe, Koji*; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; Uedono, Akira*; Tanigawa, Shoichiro*

Journal of Applied Physics, 82(11), p.5339 - 5347, 1997/12

 Times Cited Count:13 Percentile:58.41(Physics, Applied)

no abstracts in English

Journal Articles

Annealing properties of defects in ion-implanted 3C-SiC studied using monoenergetic positron beams

Uedono, Akira*; Ito, Hisayoshi; Oshima, Takeshi; Suzuki, Ryoichi*; *; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*; et al.

Japanese Journal of Applied Physics, Part 1, 36(11), p.6650 - 6660, 1997/11

 Times Cited Count:16 Percentile:64.19(Physics, Applied)

no abstracts in English

Journal Articles

Positron annihilation studies of defects in 3C-SiC hot-implanted with nitrogen and aluminum ions

Ito, Hisayoshi; Uedono, Akira*; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*

Applied Physics A, 65(3), p.315 - 323, 1997/00

 Times Cited Count:16 Percentile:64.19(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Nemoto, N.*; Ito, Hisayoshi; Okumura, Hajime*; *; Yoshida, Sadafumi*; Nashiyama, Isamu

Mater. Sci. Eng., B, 47(3), p.218 - 223, 1997/00

 Times Cited Count:1 Percentile:12.05(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Intrinsic defects in cubic silicon carbide

Ito, Hisayoshi; Kawasuso, Atsuo; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Tanigawa, Shoichiro*; *; Okumura, Hajime*; Yoshida, Sadafumi*

Physica Status Solidi (A), 162, p.173 - 198, 1997/00

 Times Cited Count:131 Percentile:97.98(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Formation of oxide-trapped charges in 6H-SiC MOS structures

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

Radiation Physics and Chemistry, 50(5), p.429 - 433, 1997/00

 Times Cited Count:0 Percentile:0.01(Chemistry, Physical)

no abstracts in English

Journal Articles

Defects in ion-implanted 3C-SiC probed by a monoenergetic positron beam

Uedono, Akira*; Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; *; *; et al.

Japanese Journal of Applied Physics, Part 1, 35(12A), p.5986 - 5990, 1996/12

no abstracts in English

43 (Records 1-20 displayed on this page)