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C in dry oxygen ambient on silicon carbide and their thermal annealing effectsYoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*
Denshi Joho Tsushin Gakkai Rombunshi, C, 86(4), p.426 - 433, 2003/04
no abstracts in English
Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Yoshida, Sadafumi*
Materials Science Forum, 389-393, p.1033 - 1036, 2002/05
no abstracts in English
Iida, Takeshi*; Tomioka, Yuichi*; Yoshimoto, Kimihiro*; Midorikawa, Masahiko*; Tsukada, Hiroyuki*; Orihara, Misao*; Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Ito, Hisayoshi; et al.
Japanese Journal of Applied Physics, Part 1, 41(2A), p.800 - 804, 2002/02
Times Cited Count：16 Percentile：53.60(Physics, Applied)no abstracts in English
interfaces by optical and electrical measurementsIshida, Yuki*; Takahashi, Tetsuo*; Okumura, Hajime*; Jikimoto, Tamotsu*; Tsuchida, Hidekazu*; Yoshikawa, Masahito; Tomioka, Yuichi*; Midorikawa, Masahiko*; Hijikata, Yasuto*; Yoshida, Sadafumi*
Materials Science Forum, 389-393, p.1013 - 1016, 2002/00
Times Cited Count：5 Percentile：23.66(Materials Science, Multidisciplinary)no abstracts in English
Tomioka, Yuichi*; Iida, Takeshi*; Midorikawa, Masahiko*; Tsukada, Hiroyuki*; Yoshimoto, Kimihiro*; Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Ishida, Yuki*; Kosugi, Ryoji*; et al.
Materials Science Forum, 389-393, p.1029 - 1032, 2002/00
Times Cited Count：4 Percentile：20.01(Materials Science, Multidisciplinary)no abstracts in English
Ito, Hisayoshi; Kawasuso, Atsuo; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okada, Sohei; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*
Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.23 - 29, 1999/00
no abstracts in English
Oshima, Takeshi; Ito, Hisayoshi; Uedono, Akira*; Suzuki, Ryoichi*; Ishida, Yuki*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Kojima, Kazutoshi; Odaira, Toshiyuki*; Nashiyama, Isamu; et al.
Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.469 - 476, 1999/00
no abstracts in English
Suzuki, Ryoichi*; ; Uedono, Akira*; Y.K.Cho*; Yoshida, Sadafumi*; Ishida, Yuki*; Oshima, Takeshi; Ito, Hisayoshi; ; Mikado, Tomohisa*; et al.
Japanese Journal of Applied Physics, Part 1, 37(8), p.4636 - 4643, 1998/08
Times Cited Count：28 Percentile：74.06(Physics, Applied)no abstracts in English
Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; ; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*
Denshi Joho Tsushin Gakkai Rombunshi, C-II, 81(1), p.140 - 150, 1998/01
no abstracts in English
Kawasuso, Atsuo; Morishita, Norio; Oshima, Takeshi; Okada, Sohei; Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; Yoshida, Sadafumi*; Okumura, Hajime*
Applied Physics A, 67(2), p.209 - 212, 1998/00
Times Cited Count：46 Percentile：84.69(Materials Science, Multidisciplinary)no abstracts in English
-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structuresYoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*
Electronics and Communication in Japan., Part2, 81(10), p.37 - 47, 1998/00
no abstracts in English
T.Henkel*; ; ; I.Koutzarov*; Okumura, Hajime*; Yoshida, Sadafumi*; Oshima, Takeshi
Mat. Res. Soc. Symp. Proc., 512, p.163 - 168, 1998/00
no abstracts in English
-raysYoshikawa, Masahito; ; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; ; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*
Mater. Sci. Forum, 264-268, p.1017 - 1020, 1998/00
no abstracts in English
Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Abe, Koji*; Suzuki, Ryoichi*; ; Aoki, Yasushi; Tanigawa, Shoichiro*; Yoshikawa, Masahito; Mikado, Tomohisa*; et al.
Mater. Sci. Forum, 264-268, p.745 - 748, 1998/00
no abstracts in English
/4H-SiC interface by using high temperature hydrogen annealing at 1000CFukuda, Kenji*; Nagai, Kiyoko*; Sekigawa, Toshihiro*; Yoshida, Sadafumi*; Arai, Kazuo*; Yoshikawa, Masahito
Proceedings of 1998 International Conference on Solid State Devices and Materials (SSDM 1998), p.100 - 101, 1998/00
no abstracts in English
Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Abe, Koji*; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; Uedono, Akira*; Tanigawa, Shoichiro*
Journal of Applied Physics, 82(11), p.5339 - 5347, 1997/12
Times Cited Count：13 Percentile：57.19(Physics, Applied)no abstracts in English
Uedono, Akira*; Ito, Hisayoshi; Oshima, Takeshi; Suzuki, Ryoichi*; ; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*; et al.
Japanese Journal of Applied Physics, Part 1, 36(11), p.6650 - 6660, 1997/11
Times Cited Count：16 Percentile：62.96(Physics, Applied)no abstracts in English
Ito, Hisayoshi; Kawasuso, Atsuo; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*
JAERI-Conf 97-003, p.253 - 255, 1997/03
no abstracts in English
Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*
JAERI-Conf 97-003, p.265 - 268, 1997/03
no abstracts in English
Ito, Hisayoshi; Uedono, Akira*; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*
Applied Physics A, 65(3), p.315 - 323, 1997/00
Times Cited Count：16 Percentile：62.96(Materials Science, Multidisciplinary)no abstracts in English
