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Journal Articles

Synchrotron radiation-based techniques available at JAEA advanced characterization nanotechnology platform (Japan Atomic Energy Agency)

Yoneda, Yasuhiro; Yoshigoe, Akitaka; Takeda, Yukiharu; Shiwaku, Hideaki; Matsumura, Daiju; Shobu, Takahisa; Tamura, Kazuhisa

Materia, 58(12), p.763 - 769, 2019/12

This is an introduction to the equipment provided for each implementation period belonging to the structure analysis platform in the nanotechnology platform.

Journal Articles

Synchrotron radiation real-time photoelectron spectroscopy study on adsorption reactions of oxygen molecule at semiconductor surfaces

Yoshigoe, Akitaka

Hoshako, 32(4), p.185 - 198, 2019/07

Synchrotron radiation photoelectron spectroscopy is a beneficial technique for precise analysis of chemical states of solid surfaces. Owing to its high luminosity, it ensures availability of termed synchrotron radiation real-time photoelectron spectroscopy which enables "${it in situ}$" observation of chemical reactions with gas molecules occurring at surfaces. In this review, oxygen adsorption reactions in the oxidation of silicon single crystal surfaces are focused. Through the demonstration of our research, the usefulness of synchrotron radiation real-time photoelectron spectroscopy to study molecular adsorption reactions at solid surfaces is briefly described and the future perspective would also be shown.

Journal Articles

Mass transport in the PdCu phase structures during hydrogen adsorption and absorption studied by XPS under hydrogen atmosphere

Tang, J.*; Yamamoto, Susumu*; Koitaya, Takanori*; Yoshigoe, Akitaka; Tokunaga, Takuma*; Mukai, Kozo*; Matsuda, Iwao*; Yoshinobu, Jun*

Applied Surface Science, 480, p.419 - 426, 2019/06

 Times Cited Count:1 Percentile:76.22(Chemistry, Physical)

Mass transports during hydrogen adsorption and absorption processes of PdCu alloys that has advantages of higher hydrogen diffusivity and economically lower-cost than the other Pd-alloys were studied. The research was made with a comparison of the well-known ordered phase of the bcc structure (the B2 phase) and a mixed phase of the fcc and B2 structures. ${it In-situ}$ ultrahigh vacuum X-ray photoelectron spectroscopy and ambient pressure X-ray photoelectron spectroscopy using synchrotron radiation were carried out to trace the chemical states of the Pd and Cu atoms as a function of temperatures. It is elucidated that the initial adsorption and absorption processes were similar in the two phases, but a hydrogen diffusion rate to the bulk was higher in the ordered phase than in the mixed one. We found the dynamics of the Pd and Cu atoms during the hydrogen adsorption/absorption processes largely depend on temperature. In the hydrogen atmosphere, the Pd atoms segregate at the surface below 373 K and Cu atoms segregate at the surface above 373 K. The present results agree well with the previous theoretical calculations and, thus, provide appropriate inputs toward developments of the hydrogen permeation materials.

Journal Articles

Simultaneous observation of Si oxidation rate and oxidation-induced strain using XPS

Ogawa, Shuichi*; Yoshigoe, Akitaka; Takakuwa, Yuji*

Vacuum and Surface Science, 62(6), p.350 - 355, 2019/06

Thermal oxidation of Si substrate is an indispensable process for the Si device fabrication. However, the influence of oxidation induced strain cannot be ignored for thin films. Synchrotron radiation real-time photoelectron spectroscopy was used as a method to measure simultaneously oxidation induced strain and oxidation rate. It was found that the acceleration of interfacial oxidation induced by thermal strain was observed for the rapid thermal oxidation. The results can be explained by the model in which point defects caused by strain become reaction sites at the SiO$$_{2}$$/Si interface.

Journal Articles

Exploring the development of cesium removal processes via nanoscale chemical state analysis of cesium-containing clay minerals; Application of soft X-ray synchrotron radiation photoelectron microscopy to observe insulating materials

Yoshigoe, Akitaka

Hoshako Riyo No Tebiki, p.130 - 138, 2019/02

The educational book on next-generation synchrotron radiation usage is partially written. This book is being planned by several professors at Tohoku University. In this book, the contents which have already reported in our recent paper [Appl. Phys. Lett. 112 (2018) 021603.] are mainly written. The future perspective on photoemission electron microscopy using next generation synchrotron radiation and its possibility to analyze environmental samples and insulating functional materials are also described.

Journal Articles

Biodegradability of disulfide-organosilica nanoparticles evaluated by soft X-ray photoelectron spectroscopy; Cancer therapy implications

Mekaru, Harutaka*; Yoshigoe, Akitaka; Nakamura, Michihiro*; Doura, Tomohiro*; Tamanoi, Fuyuhiko*

ACS Applied Nano Materials (Internet), 2(1), p.479 - 488, 2019/01

Organosilica nanoparticles are attractive for use as drug delivery systems for cancer therapy. Ideally, the nanoparticles need to degrade in the body after drug delivery to minimize their risk. However, the biodegradation of organosilica nanoparticles has not been thoroughly investigated. In this study, we used X-ray photoelectron spectroscopy and field-emission scanning electron microscopy to investigate the degradation of organosilica nanoparticles by glutathione, a peptide found in cells. Our results indirectly indicate that glutathione is able to reduce the disulfide bonds present in the network of one type of the nanoparticles, promoting dissociation of these nanoparticles. The dissociated nanoparticles form large maple leaf-shaped structures under certain conditions. We consider the formation mechanism of these symmetrical structures.

Journal Articles

Application of combination between time-resolved synchrotron radiation photoelectron spectroscopy and supersonic oxygen molecular beams to surface reaction dynamics study

Yoshigoe, Akitaka

X-sen Kodenshi Bunkoho, p.271 - 282, 2018/12

Based on the series of author's studies, the author explains the time-resolved synchrotron radiation X-ray photoelectron spectroscopy and supersonic oxygen molecular beam study on the adsorption reaction dynamics of oxygen molecules at the Si single crystal surface in the section 5.10 of the new textbook "X-ray Photoelectron Spectroscopy" (Kodan-sha) edited by Yuji Takakuwa.

Journal Articles

STM-induced SiO$$_{2}$$ decomposition on Si(110)

Yano, Masahiro; Uozumi, Yuki*; Yasuda, Satoshi; Asaoka, Hidehito; Tsukada, Chie*; Yoshida, Hikaru*; Yoshigoe, Akitaka

e-Journal of Surface Science and Nanotechnology (Internet), 16, p.370 - 374, 2018/08

Journal Articles

Characterization of SiO$$_{2}$$ reduction reaction region at void periphery on Si(110)

Yano, Masahiro; Uozumi, Yuki*; Yasuda, Satoshi; Tsukada, Chie*; Yoshida, Hikaru*; Yoshigoe, Akitaka; Asaoka, Hidehito

Japanese Journal of Applied Physics, 57(8S1), p.08NB13_1 - 08NB13_4, 2018/07

 Times Cited Count:1 Percentile:88.11(Physics, Applied)

Journal Articles

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

Yamada, Takahiro*; Watanabe, Kenta*; Nozaki, Mikito*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA07_1 - 06KA07_6, 2018/06

 Times Cited Count:3 Percentile:64.52(Physics, Applied)

Thermal oxidation of AlGaN surface and its impact on the electrical properties of AlGaN/GaN MOS capacitors were investigated by means of synchrotron radiation photoelectron spectroscopy (SR-PES), atomic force microscopy (AFM) and C-V measurements. SR-PES analysis revealed that the AlGaN surface is oxidized even at low temperature of 400$$^{circ}$$C, in contrast to no oxide formation on GaN surface. However, since no noticeable change in the surface morphology was observed at temperatures up to 800$$^{circ}$$C, it can be concluded that an ultrathin oxide overlayer is formed on the AlGaN surface. On the other hand, for the oxidation treatments above 850$$^{circ}$$C, the formation of small oxide grains was observed over the entire area of the AlGaN surface, and the growth of oxide grains significantly degraded the surface morphology. Therefore, the AlGaN/GaN MOS capacitors were fabricated on the AlGaN surface oxidized at moderate temperatures up to 800$$^{circ}$$C. While we have confirmed that relatively good interface properties are obtained for direct AlON deposition without oxidation treatment, it was found that the oxidation treatment at 400$$^{circ}$$C leads to further improvement of interface properties and reduction of C-V hysteresis.

Journal Articles

SiO$$_{2}$$/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Watanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA03_1 - 06KA03_6, 2018/06

 Times Cited Count:8 Percentile:32.09(Physics, Applied)

The advantage of SiO$$_{2}$$/AlON stacked gate dielectrics over SiO$$_{2}$$, AlON and Al$$_{2}$$O$$_{3}$$ single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.

Journal Articles

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Nozaki, Mikito*; Watanabe, Kenta*; Yamada, Takahiro*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA02_1 - 06KA02_7, 2018/06

 Times Cited Count:8 Percentile:32.09(Physics, Applied)

We fabricated AlON dielectric films by repeating thin AlN deposition and in situ O$$_{3}$$ oxidation for AlGaN/GaN MOS-HFETs. Uniform nitrogen distribution is achievable by the proposed ALD-based process and that nitrogen concentration can be precisely controlled by changing AlN thickness (ALD cycle number) in each step. It was found that AlON films grown by ALD system offers significant advantages in terms of practical application while keeping superior Vth stability and electrical properties at the insulator/AlGaN interface in AlGaN/GaN MOS-HFETs.

Journal Articles

Control of Ga-oxide interlayer growth and Ga diffusion in SiO$$_{2}$$/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability

Yamada, Takahiro*; Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Hisashi*; Takahashi, Tokio*; Shimizu, Mitsuaki*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 11(1), p.015701_1 - 015701_4, 2018/01

 Times Cited Count:18 Percentile:12.49(Physics, Applied)

A simple and feasible method for fabricating high-quality and highly reliable GaN-based metal-oxide-semiconductor (MOS) devices was developed on the basis of systematic physical and electrical characterizations. Chemical vapor deposition of SiO$$_{2}$$ films directly onto GaN substrates forming Ga-oxide interlayers was used to fabricate SiO$$_{2}$$/GaO$$_{x}$$/GaN stacked structures. Although well-behaved hysteresis-free GaN-MOS capacitors with extremely low interface state density below 10$$^{10}$$cm$$^{-2}$$eV$$^{-1}$$ were obtained by post-deposition annealing, Ga diffusion into overlying SiO$$_{2}$$ layers severely degraded the insulating property and dielectric breakdown characteristics of the MOS devices. However, this problem was found to be solved by employing rapid thermal processing, leading to superior performance of the GaN-MOS devices in terms of interface quality, insulating property and gate dielectric reliability.

Journal Articles

Nanoscale spatial analysis of clay minerals containing cesium by synchrotron radiation photoemission electron microscopy

Yoshigoe, Akitaka; Shiwaku, Hideaki; Kobayashi, Toru; Shimoyama, Iwao; Matsumura, Daiju; Tsuji, Takuya; Nishihata, Yasuo; Kogure, Toshihiro*; Okochi, Takuo*; Yasui, Akira*; et al.

Applied Physics Letters, 112(2), p.021603_1 - 021603_5, 2018/01

 Times Cited Count:2 Percentile:75.59(Physics, Applied)

A synchrotron radiation photoemission electron microscope (SR-PEEM) was applied to demonstrate pinpoint analysis of micrometer-sized weathered biotite clay particles with artificially adsorbed cesium (Cs) atoms. Despite the insulating properties of the clay, we observed the spatial distributions of constituent elements (Si, Al, Cs, Mg, Fe) without charging issues. We found that Cs atoms were likely to be adsorbed evenly over the entire particle. Spatially-resolved X-ray absorption spectra (XAS) of the Cs M$$_{4,5}$$-edge region showed Cs to be present in a monocation state (Cs$$^{+}$$). Further pinpoint XAS measurements were also performed at the Fe L$$_{2,3}$$-edge to determine the chemical valence of the Fe atoms. Our results demonstrate the utility of SR-PEEM as a tool for spatially-resolved chemical analyses of various environmental substances, which is not limited by the poor conductivity of samples.

Journal Articles

Design and control of interface reaction between Al-based dielectrics and AlGaN Layer in AlGaN/GaN metal-oxide-semiconductor structures

Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Applied Physics Letters, 111(4), p.042102_1 - 042102_5, 2017/07

 Times Cited Count:14 Percentile:23.77(Physics, Applied)

AlGaN/GaN HFET (hetero-junction field-effect transitor) has gained much attention as next-generation high frequency and high power devices. In this study, we systematically investigated the interface reaction between Al-based dielectrics (Al$$_{2}$$O$$_{3}$$ and AlON) and AlGaN layer during deposition and post-deposition annealing (PDA), and revealed high thermal stability of AlON/AlGaN interface.

Journal Articles

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Yamada, Takahiro*; Ito, Joyo*; Asahara, Ryohei*; Watanabe, Kenta*; Nozaki, Mikito*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; et al.

Journal of Applied Physics, 121(3), p.035303_1 - 035303_9, 2017/01

 Times Cited Count:34 Percentile:7.7(Physics, Applied)

Initial oxidation of GaN(0001) epilayers and subsequent growth of thermal oxides in dry oxygen ambient were investigated by means of X-ray photoelectron spectroscopy, spectroscopic ellipsometry, atomic force microscopy and X-ray diffraction measurements. It was found that, whereas initial oxide formation tends to saturate at temperatures below 800$$^{circ}$$C, selective growth of small oxide grains proceeds at dislocations in the epilayers, followed by noticeable grain growth leading to rough surface morphology at higher oxidation temperatures. This indicates that oxide growth and its morphology are crucially dependent on the defect density in the GaN epilayers. Structural characterizations also revealed that polycrystalline $$alpha$$- and $$beta$$-phase Ga$$_{2}$$O$$_{3}$$ grains in an epitaxial relation with the GaN substrate are formed from the initial stage of the oxide growth. On the basis of these experimental findings, we also developed a comprehensive model for GaN oxidation mediated by nitrogen removal and mass transport.

Journal Articles

Oxidation processes of copper-gold alloy surface induced by supersonic oxygen molecular beam

Okada, Michio*; Tsuda, Yasutaka*; Yoshigoe, Akitaka; Di$~n$o, W. A.*

Do To Dogokin, 56(1), p.232 - 236, 2017/00

We reported the our studies on the surface temperature (Ts) dependence of oxidation on the Cu$$_{3}$$Au(111) surface by a supersonic O$$_{2}$$ molecular beam, using synchrotron radiation X-ray photoemission spectroscopy. Clean surface shows strong Au segregation to the top layer, i.e., Au surface enrichment of the clean surface. Complete Cu segregation to the surface occurs at 0.5 ML O surface coverage. The Au-rich second and third layers of the oxidized surface demonstrate the protective layer formation against oxidation deeper into the bulk. We found that Cu$$_{2}$$O formation occurs. At Ts = 300K, the Cu$$_{2}$$O growth is not so effective. The surface oxidation is less effective on Cu$$_{3}$$Au(111) than on Cu(111). At Ts = 400K, the protection by the Au-rich layer against oxidation into bulk is effective. At Ts = 500K, the Au protective layer is broken due to effective Au diffusion and thus Cu$$_{2}$$O grows deeper into bulk.

Journal Articles

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal-oxide-semiconductor structures

Asahara, Ryohei*; Nozaki, Mikito*; Yamada, Takahiro*; Ito, Joyo*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Applied Physics Express, 9(10), p.101002_1 - 101002_4, 2016/10

 Times Cited Count:28 Percentile:13.18(Physics, Applied)

The superior physical and electrical properties of AlON gate dielectrics on AlGaN/GaN substrates in terms of thermal stability, reliability, and interface quality were demonstrated by direct AlON deposition and subsequent annealing. Nitrogen incorporation into alumina was proven to be beneficial both for suppressing intermixing at the insulator/AlGaN interface and reducing the number of electrical defects in Al$$_{2}$$O$$_{3}$$ films. Consequently, we achieved high-quality AlON/AlGaN/GaN metal-oxide-semiconductor capacitors with improved stability against charge injection and a reduced interface state density as low as 1.2$$times$$10$$^{11}$$ cm$$^{-2}$$eV$$^{-1}$$. The impact of nitrogen incorporation into the insulator was discussed on the basis of experimental findings.

Journal Articles

Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN; Key role of Al capping layers in interface scavenging reactions

Nozaki, Mikito*; Ito, Joyo*; Asahara, Ryohei*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 9(10), p.105801_1 - 105801_4, 2016/10

 Times Cited Count:4 Percentile:69.33(Physics, Applied)

Interface reactions between Ti-based electrodes and n-type GaN epilayers were investigated by synchrotron radiation X-ray photoelectron spectroscopy. Metallic Ga and thin TiN alloys were formed at the interface by subsequently depositing Al capping layers on ultrathin Ti layers even at room temperature. By comparing results from stacked Ti/Al and single Ti electrodes, the essential role of Al capping layers serving as an oxygen-scavenging element to produce reactive Ti underlayers was demonstrated. Further growth of the metallic interlayer during annealing was observed. A strategy for achieving low-resistance ohmic contacts to n-GaN with low-thermal-budget processing is discussed.

Journal Articles

Detection of molecular oxygen adsorbate during room-temperature oxidation of Si(100)2$$times$$1 surface; In situ synchrotron radiation photoemission study

Yoshigoe, Akitaka; Yamada, Yoichi*; Taga, Ryo*; Ogawa, Shuichi*; Takakuwa, Yuji*

Japanese Journal of Applied Physics, 55(10), p.100307_1 - 100307_4, 2016/09

 Times Cited Count:1 Percentile:92.08(Physics, Applied)

Synchrotron radiation photoelectron spectroscopy during the oxidation of the Si(100)2$$times$$1 surface at room temperature revealed the existence of the molecularly adsorbed oxygen, which was considered to be absent. The O 1s spectra was found to be similar to that of the oxidation of Si(111)7$$times$$7 surfaces. Also the molecular oxygen was appeared after the initial surface oxides, indicating that this was not a precursor for dissociation oxygen adsorption onto the clean surface. We have proposed presumable structural models for atomic configurations, where the molecular oxygen was resided on the oxidized silicon with two oxygen atoms at the backbonds.

673 (Records 1-20 displayed on this page)