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Journal Articles

Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation

Kato, Masashi*; Yoshihara, Kazuki*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

Japanese Journal of Applied Physics, 53(4S), p.04EP09_1 - 04EP09_5, 2014/04

 Times Cited Count:3 Percentile:16.04(Physics, Applied)

Oral presentation

Observation of deep levels in p-type 4H-SiC induced by low-energy electron irradiation

Yoshihara, Kazuki*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Deep-levels near the valence band of p-type 4H-SiC induced by low-energy electron irradiation

Yoshihara, Kazuki*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

no journal, , 

no abstracts in English

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