Gamma-ray spectroscopy with a CeBr scintillator under intense -ray fields for nuclear decommissioning

Kaburagi, Masaaki; Shimazoe, Kenji*; Kato, Masahiro*; Kurosawa, Tadahiro*; Kamada, Kei*; Kim, K. J.*; Yoshino, Masao*; Shoji, Yasuhiro*; Yoshikawa, Akira*; Takahashi, Hiroyuki*; et al.

Nuclear Instruments and Methods in Physics Research A, 988, p.164900_1 - 164900_8, 2021/02

https://doi.org/10.1016/j.nima.2020.164900

An increasing number of nuclear facilities have been decommissioned worldwide following the 2011 accident of the TEPCO' Fukushima Daiichi Nuclear Power Station. During the decommissioning, radioactive materials have to be retrieved under proper management. In this study, a small cubic CeBr spectrometer with dimensions of 5 mm 5 mm 5 mm was manufactured to perform -ray spectroscopy under intense -ray fields. Furthermore, thanks to a fast digital process unit and a customized photomultiplier, the device could perform -ray spectroscopy at dose rates of over 1 Sv/h. The energy resolution (FWHM) at 662 keV ranged from 4.4% at 22 mSv/h to 5.2% at 1407 mSv/h for a Cs radiation field. Correspondingly, at 1333 keV, it ranged from 3.1% at 26 mSv/h to 4.2% at 2221 mSv/h for a Co radiation field, which suggested to realize -ray assessment of Cs, Cs, Co, and Eu at dose rates of over 1 Sv/h.

A Cubic CeBr gamma-ray spectrometer suitable for the decommissioning of the Fukushima Daiichi Nuclear Power Station

Kaburagi, Masaaki; Shimazoe, Kenji*; Otaka, Yutaka*; Uenomachi, Mizuki*; Kamada, Kei*; Kim, K. J.*; Yoshino, Masao*; Shoji, Yasuhiro*; Yoshikawa, Akira*; Takahashi, Hiroyuki*; et al.

Nuclear Instruments and Methods in Physics Research A, 971, p.164118_1 - 164118_8, 2020/08

https://doi.org/10.1016/j.nima.2020.164118

A New measurement of the astrophysical Li(d,t)Li reaction

Hashimoto, Takashi; Ishiyama, Hironobu*; Watanabe, Yutaka*; Hirayama, Yoshikazu*; Imai, Nobuaki*; Miyatake, Hiroari; Jeong, S.-C.*; Tanaka, Masahiko*; Yoshikawa, Nobuharu*; Nomura, Toru*; et al.

Physics Letters B, 674(4-5), p.276 - 280, 2009/04

https://doi.org/10.1016/j.physletb.2009.03.031

The excitation function of the Li(d,t)Li reaction was directly measured using Li beams at E = 0.3, 0.4, 0.5, 0.7, 0.8, 1.0, 1.1, and 1.2 MeV with CD targets. The beam energies covered the Gamow peaks for 1310 K. Large cross sections were observed at around E = 0.8 MeV, implying a resonance state located at 22.4 MeV in Be. The present astrophysical reaction rate is higher in one order magnitude than the presently adopted rate at around 110 K.

Beam commissioning software and database for J-PARC LINAC

Sako, Hiroyuki; Sakaki, Hironao; Shen, G.; Takahashi, Hiroki; Yoshikawa, Hiroshi; Ikeda, Hiroshi*; Allen, C. K.*

Proceedings of International Conference on Accelerator and Large Experimental Physics Control Systems (ICALEPCS '07) (CD-ROM), p.698 - 700, 2007/10

A beam commissioning software system based on a relational database has been developed for J-PARC LINAC. A high level application framework with SAD script interperter, JCE was developed in Java. JCE and XAL developed in SNS has been used to write commissioning applications with functions of device control, online modeling and data analysis. A commissioning database system has been developed a base data source for commissioning tools.

A New measurement of the astrophysical Li(, n)B reaction

Ishiyama, Hironobu*; Hashimoto, Takashi; Ishikawa, Tomoko*; Watanabe, Yutaka*; Das, S. K.*; Miyatake, Hiroari; Mizoi, Yutaka*; Fukuda, Tomokazu*; Tanaka, Masahiko*; Fuchi, Yoshihide*; et al.

Physics Letters B, 640(3), p.82 - 85, 2006/09

https://doi.org/10.1016/j.physletb.2006.07.036

The excitation function of the Li(,n)B reaction was measured while identifying the final state event by event in the region of E = 0.7 - 2.6 MeV using a highly efficient detector system and a low-energy Li beam. The results are much improved both in statistics and precisions, and show smaller cross sections than those of previous measurements by a factor of more than 2 in the low-energy region of E 1.5 MeV. A resonance-like structure is found at around E = 0.85 MeV.

Production of a low-energy radioactive nuclear beam with high purity using JAERI-RMS

Ishiyama, Hironobu*; Ishikawa, Tomoko*; Hashimoto, Takashi; Watanabe, Yutaka*; Hirayama, Yoshikazu*; Imai, Nobuaki*; Miyatake, Hiroari; Tanaka, Masahiko*; Fuchi, Yoshihide*; Yoshikawa, Nobuharu*; et al.

Nuclear Instruments and Methods in Physics Research A, 560(2), p.366 - 372, 2006/05

https://doi.org/10.1016/j.nima.2005.12.244

Thanks to the nature of inverse transfer-reactions, low-energy radioactive nuclear beams in light neutron-rich region were produced. The mass-separation and velocity-separation of the JAERI recoil mass-separator help to form high purity beams. The beams of Li, B, and N-RNBs are utilized to the experiments, so far, with those beam intensities and purities of 1.410 pps and 99, 7.810 pps and 98, and 4.710 pps and 98.5, respectively.

Relationship between the current direction in the inversion layer and the electrical characteristics of metal-oxide-semiconductor field effect transistors on 3C-SiC

Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro

Materials Science Forum, 457-460(Part2), p.1405 - 1408, 2004/06

The electrical characteristics of cubic silicon carbide (3C-SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with the current direction in the inversion layer perpendicular to [-110] ([-110]-perpendicular MOSFETs) were compared to those of 3C-SiC MOSFETs with the current direction in the inversion layer parallel to [-110] ([-110]-parallel MOSFETs). The threshold voltage (V) for both MOSFETs shows -0.5 V although enhancement type MOSFETs were designed. The values of channel mobility which was estimated from linear region of drain current (I) - drain voltage (V) curves are 230 cm/Vs for [-110]-perpendicular MOSFETs and 215 cm/Vs for [-110]-parallel MOSFETs, indicating no significant difference between both MOSFETs. The value of I for [-110]-perpendicular MOSFETs is of order of 10-8 A at V = 10V and gate voltage (V) of -2V. However, for [-110]-parallel MOSFETs, I shows of order of -10-6 A at V = 10V and V = -2V.

The Electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide

Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro

Japanese Journal of Applied Physics, Part 2, 42(6B), p.L625 - L627, 2003/06

https://doi.org/10.1143/JJAP.42.L625

The n-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm/Vs. The leakage current of gate oxide was of a few tens of nA/cm at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.

Gamma-ray irradiation effects on the electrical characteristics of 6H-SiC MOSFETs with annealed gate-oxide

Oshima, Takeshi; Lee, K. K.; Oi, Akihiko; Yoshikawa, Masahito; Ito, Hisayoshi

Materials Science Forum, 389-393, p.1093 - 1096, 2002/05

Gamma-ray irradiation effects on the electrical characteristics such as threshold voltage (V) and channel mobility () for 6H-SiC MOSFETs were studied.The gate oxide of the MOSFETs were annealed in hydrogen at 700 or steam at 800 in fabrication process to improve the initial electrical characteristics of the MOSFETs.As for the hydrogen-annealed MOSFETs,V was changed from 0.9V to 3.1 V by irradiation at 530kGy. decreased after irradiation above 60 kGy. As for the steam-annealed MOSFETs,V was changed from 2.7 to 3.3 V by irradiation at 530kGy. decreased above 180 kGy. This indicates that radiation resistance for the steam-annealed MOSFETs is higher than that for the hydrogen-annealed MOSFETs.

Mssbauer isomer shifts of Cs-impurity atoms implanted into metallic matrices

Muramatsu, Hisakazu*; Yoshikawa, K.*; ; ; Miura, Taichi*; Watanabe, Satoshi; Koizumi, Mitsuo; Osa, Akihiko; Sekine, Toshiaki

JAERI-Review 99-025, TIARA Annual Report 1998, p.211 - 213, 1999/10

https://jopss.jaea.go.jp/pdfdata/JAERI-Review-99-025.pdf

no abstracts in English