Survivability of silicon-doped diamond-like carbon films in energetic atomic/molecular oxygen beam environments

田川 雅人*; 岸田 和博*; 横田 久美子*; 松本 康司*; 吉越 章隆; 寺岡 有殿; Zhang, J.*; Minton, T. K.*

Protection of Materials and Structures from the Space Environment; Astrophysics and Space Science Proceedings, Vol.32, p.547 - 555, 2012/08

https://doi.org/10.1007/978-3-642-30229-9_51

Volatile products were measured from two types of diamond-like carbon films under the hyperthermal atomic oxygen (AO) beam bombardment. It was clearly observed that CO and CO were formed at the conventional hydrogenated DLC surface by hyperthermal AO beam exposure. Desorption rates of CO and CO are constant with AO fluence which reflects the constant erosion rate of the hydrogenated DLC. In contrast, Si-doped DLC shows decrease in amount of CO and CO with increasing AO fluence. Oxidation of Si atoms at the DLC surface was detected by X-ray photoelectron spectroscopy. This is the evidence that SiO film formed at the DLC surface could prevent AO reaction with C atoms in DLC which leads to loss of DLC. Since a self-healing capability can be expected on Si-doped DLC, metal doping is a promising technology for space application of DLC.