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Journal Articles

Current transient effect in N-channel 6H-SiC MOSFET induced by heavy ion irradiation

Lee, K. K.*; Laird, J. S.*; Oshima, Takeshi; Onoda, Shinobu; Hirao, Toshio; Ito, Hisayoshi

Materials Science Forum, 645-648, p.1013 - 1016, 2010/04

no abstracts in English

Journal Articles

Radiation hardness evaluation of SiC-BGSIT

Tanaka, Yasunori*; Onoda, Shinobu; Takatsuka, Akio*; Oshima, Takeshi; Yatsuo, Tsutomu*

Materials Science Forum, 645-648, p.941 - 944, 2010/04

no abstracts in English

Journal Articles

Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide

Tomita, Takuro*; Iwami, Masahiro*; Yamamoto, Minoru*; Deki, Manato*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Nakagawa, Yoshinori*; Kitada, Takahiro*; Isu, Toshiro*; Saito, Shingo*; et al.

Materials Science Forum, 645-648, p.239 - 242, 2010/04

no abstracts in English

Journal Articles

New lines and issues associated with deep defect spectra in electron, proton and $$^{4}$$He ion irradiated 4H SiC

Yan, F.*; Devaty, R. P.*; Choyke, W. J.*; Kimoto, Tsunenobu*; Oshima, Takeshi; Pensl, G.*; Gali, A.*

Materials Science Forum, 645-648, p.411 - 414, 2010/00

Silicon Carbide (SiC) samples were irradiated with electron, proton and $$^{4}$$He ions and defects in the irradiated SiC were investigated by Low Temperature Photo Luminescence (LTPL). After irradiation, PL spectra between 2.48 and 2.62 eV were measured at 7 K. As a results, several PL lines were observed. These lines showed the same annealing behavior and were annealed out between 1300 and 1400$$^{circ}$$C. Therefore, it is concluded that these line have the same origin. In addition, as a result of simulation, the structure of the defect is determined to be di-carbon antisite.

Journal Articles

Shallow defects observed in as-grown and electron-irradiated or He$$^{+}$$-implnated Al-doped 4H-SiC epilayers

Beljakowa, S.*; Reshanov, S. A.*; Zippelius, B.*; Krieger, M.*; Pensl, G.*; Danno, Katsunori*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Yan, F.*; et al.

Materials Science Forum, 645-648, p.427 - 430, 2010/00

Defects in Al-doped p-type 4H-SiC were investigated using admittance spectroscopy (AS). Also, defects in 4H-SiC irradiated with electrons and He ions were studied using AS. As a result, a shallow level with activation energy at 170 meV was found and is has the capture cross section of 3.5$$times$$10$$^{-16}$$/cm$$^{2}$$ which is extremely low value. The concentration of the defect did not change even after electron and He irradiations. Also, the defect can be found after annealing at 1800 $$^{circ}$$C. Therefore, we can conclude that the defect is a very stable intrinsic defect in SiC.

Journal Articles

Charge collection efficiency of 6H-SiC P$$^{+}$$N diodes degraded by low-energy electron irradiation

Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

Materials Science Forum, 645-648, p.921 - 924, 2010/00

Electron irradiation effects on the charge collection efficiency (CCE) of the 6H-SiC p$$^{+}$$n diodes were investigated. The diodes were irradiated with electrons at energies from 100 keV to 1 MeV. The value of CCE of the diodes using alpha particles compared before and after the electron irradiations. In the case of 100 keV electron, no significant change in CCE was observed. On the other hand, above 200 keV, the values of CCE decreased with increasing fluence. The degradation was larger with increasing incident electron energy.

Journal Articles

Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method

Matsushita, Yoshinori*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

Materials Science Forum, 645-648, p.207 - 210, 2010/00

Silicon carbide (SiC) is a promising material for radiation hardness devices. In this study, we evaluated excess carrier decay curves in both as-grown and electron-irradiated p-type 4H-SiC layers by the microwave photoconductivity decay ($$mu$$-PCD) method. The samples used in this study were an Al-doped p-type epitaxial layer grown on a Si-face B doped bulk p-type 4H-SiC. The samples were irradiated with electrons at an energy of 160 keV and at a doses of 1$$times$$10$$^{16}$$ cm$$^{-2}$$ (ele-16) and 1$$times$$10$$^{17}$$ cm$$^{-2}$$ (ele-17). As a results of $$mu$$-PCD measurements, the lifetimes of free carriers for as-grown, ele-16 and ele-17 were estimated to be 0.14 $$mu$$s, 0.07 $$mu$$s and 0.04 $$mu$$s, respectively. This result indicates that defects acting as recombination centers were introduced by the electron irradiation.

Journal Articles

The Carbon vacancy related EI4 defect in 4H SiC

Son, N. T.*; Carlsson, P.*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Magnusson, B.*; Janz$'e$n, E.*

Materials Science Forum, 645-648, p.399 - 402, 2010/00

Defects in high-purity semi-insulating 4H SiC irradiated with 2 MeV electrons at room temperature were studied using Electron paramagnetic resonance (EPR). The EPR signal named EI4 defect increased with annealing temperature up to 750 $$^{circ}$$C. Additional large-splitting $$^{29}$$Si hyperfine (hf) structures and $$^{13}$$C hf lines by the interaction with one $$^{13}$$C nucleus were investigated. Based on the observed hf structures, the C$$_{1h}$$ symmetry as well as the annealing behaviour, the EI4 defects is determined to be the complex between two carbon vacancies and a carbon antisite in the neutral charge state, V$$_{C}$$V$$_{C}$$C$$_{Si}$$$$^{0}$$. The formation of the complex is interpreted in terms of the migration of the silicon vacancy and the formation of the carbon vacancy-carbon antisite pair next to a carbon vacancy.

Journal Articles

Metastable defects in low-energy electron irradiated n-type 4H-SiC

Beyer, F. C.*; Hemmingsson, C.*; Pedersen, H.*; Henry, A.*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Janz$'e$n, E.*

Materials Science Forum, 645-648, p.435 - 438, 2010/00

By low-energy electron irradiation of epitaxial n-type 4H-SiC, the Deep Level Transient Spectroscopy (DLTS) peaks called the defects Z1/2 and EH6/7 were observed, which were also observed in as-grown layer and the commonly found peaks EH1 and EH3 (M-center) also appeared. New defect named the EB-centers increased after annealing out of EH1 and EH3. Since low energy electron irradiation (less than 220 keV) affects mainly the carbon atom in SiC, both the M- and EB-centers might be carbon related defects.

Journal Articles

Deep defects in 3C-SiC generated by H$$^{+}$$- and He$$^{+}$$-implantation or by irradiation with high-energy electrons

Weidner, M.*; Trapaidze, L.*; Pensl, G.*; Reshanov, S. A.*; Sch$"o$ner, A.*; Ito, Hisayoshi; Oshima, Takeshi; Kimoto, Tsunenobu*

Materials Science Forum, 645-648, p.439 - 442, 2010/00

Intrinsic defects in 3C-SiC generated by implantation of H$$^{+}$$ and He$$^{+}$$ ions or by irradiation of high energy electrons were investigated using DLTS (Deep Level Transient Spectroscopy). The defect parameters and the thermal stability of the observed defects are determined. The dominant DLTS peak was named W6-center and its capture-cross-section was directly measured by variation of the filling pulse length. The charge state of the W6-center is obtained from double-correlated DLTS investigations according to the Poole-Frenkel effect.

Journal Articles

Thermal stability of defects centers in n- and p-type 4H-SiC epilayers generated by irradiation with high-energy electrons

Reshanov, S. A.*; Beljakowa, S.*; Zippelius, B.*; Pensl, G.*; Danno, Katsunori*; Alfieri, G.*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Yan, F.*; et al.

Materials Science Forum, 645-648, p.423 - 426, 2010/00

n- and p-type 4H-SiC epilayers were irradiated with electrons at 170 keV or 1 MeV. Subsequent annealing (in Ar, 30 min) up to 1700 $$^{circ}$$C was carried out. Defects in the samples were investigated using DLTS (Deep Level Transient Spectroscopy). As a results, for n-type, dominant defects were Z1/Z2 and EH7, and they can observed for both 170 keV- and 1 MeV-irradiated samples. Both defects decreased with increasing temperature up to 1100 $$^{circ}$$C, although they appeared again at 1400 $$^{circ}$$C. Then they disappeared at 1600 $$^{circ}$$C. For p-type, defects named UK1 and HK2 were observed and they were very stable. No significant decrease was observed after 1700 $$^{circ}$$C annealing.

Journal Articles

Thermal histories of defect centers as measured by low temperature photoluminescence in n- and p-type 4H SiC epilayers generated by irradiation with 170 KeV or 1 MeV electrons

Yan, F.*; Devaty, R. P.*; Choyke, W. J.*; Danno, Katsunori*; Alfieri, G.*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Reshanov, S. A.*; Beljakowa, S.*; et al.

Materials Science Forum, 645-648, p.419 - 422, 2010/00

Defects in n- and p-type 4H-SiC epitaxial layer were investigated by low temperature photoluminescence spectroscopy (LTPL) and deep level transient spectroscopy (DLTS). Defects were introduced by either 170 keV or 1 MeV electron irradiation into samples at RT. The samples were annealed from 25$$^{circ}$$C to 1700$$^{circ}$$C in 100$$^{circ}$$C steps. As a result of LTPL measurements, L$$_{1}$$ line was observed after irradiation. In previous studies, L$$_{1}$$ line is thought to correlate with Z$$_{1}$$/Z$$_{2}$$ centers in DLTS measurements. However, in this study, no correlation between L$$_{1}$$ and Z$$_{1}$$1/Z$$_{2}$$ was observed.

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