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Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*
no journal, ,
no abstracts in English
Takahashi, Masamitsu; Kaizu, Toshiyuki; Mizuki, Junichiro
no journal, ,
no abstracts in English
Koike, Masato; Ishino, Masahiko; Imazono, Takashi
no journal, ,
no abstracts in English
-FeSi
fabricated by ion beam sputter deposition methodZhuravlev, A. V.; Yamamoto, Hiroyuki; Shimura, Kenichiro*; Yamaguchi, Kenji; Shamoto, Shinichi; Hojo, Kiichi; Terai, Takayuki*
no journal, ,
no abstracts in English
Nishitani, Tomohiro; Hajima, Ryoichi; Takeda, Yoshikazu*; Tabuchi, Masao*; Noritake, Yosuke*; Hayashitani, Haruhiko*
no journal, ,
no abstracts in English
/SiC interface structure by the first-principles, 2Miyashita, Atsumi; Onuma, Toshiharu*; Iwasawa, Misako*; Tsuchida, Hidekazu*; Yoshikawa, Masahito
no journal, ,
no abstracts in English
/4H-SiC(0001) interfaceOnuma, Toshiharu*; Miyashita, Atsumi; Iwasawa, Misako*; Yoshikawa, Masahito; Tsuchida, Hidekazu*
no journal, ,
no abstracts in English
n diodes irradiated with oxygen and nickel ionsIwamoto, Naoya; Onoda, Shinobu; Hishiki, Shigeomi; Mishima, Kenta; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Kamiya, Tomihiro; Sakamoto, Airi*; Nakano, Itsuo*; et al.
no journal, ,
Transient currents induced in 6H-SiC np by Ni and O ions were evaluated using Transient Ion Beam Induced Current (TIBIC). Charge Collection Efficiency (CCE) was estimated from TIBIC signals. As a results, CCE for 9 MeV-Ni and 9 MeV-O-irradiated 6H-SiC np diodes are 75 and 90 % respectively. From a simulation of ion tracks in which charge distribution and Auger recombination are considered, the origin of the decrease in CCE is explained in terms of the recombination of electron-hole pairs by Auger recombination in high ion beam induced carrier concentration.
-ray irradiation on electrical characteristics of SiC schottky barrier diodeKinoshita, Akimasa*; Tanaka, Yasunori*; Tanaka, Tomoyuki*; Fukuda, Kenji*; Arai, Kazuo*; Oshima, Takeshi; Hishiki, Shigeomi
no journal, ,
no abstracts in English
Maekawa, Masaki; Kawasuso, Atsuo
no journal, ,
no abstracts in English
Kawachi, Tetsuya
no journal, ,
Laser-driven X-ray laser, spatially coherent noble X-ray source, which is generated through the control of plasma parameter such as electron temperature and electron density, is one of the plasma photo-device. In Japan Atomic Energy Agency (JAEA), we have intensively studied the compact and efficient X-ray laser using collisional-excitation scheme and now we obtained strong Ni-like ion X-ray laser beam with the wavelength of up to 8.8 nm. Especially for the 13.9 nm Ni-like Ag laser, fully spatial coherent X-ray laser hase been demonstrated by use of double target geometry. Fully spatial coherent X-ray laser has a potential as the diagnostic tools for the surface physics using X-ray speckle technique, X-ray hologram, interferometer for the solid density plasma, and nonlinear phenomena in X-ray region. In this presentation, recent progress in X-ray laser research and its application will be reviewed.
ferrelectric materialKomiya, Shoko*; Idemoto, Yasushi*; Iikubo, Satoshi; Shamoto, Shinichi
no journal, ,
no abstracts in English
Taniyama, Satoshi*; Idemoto, Yasushi*; Iikubo, Satoshi; Shamoto, Shinichi
no journal, ,
no abstracts in English
Takai, Mamiko; Daido, Hiroyuki; Sagisaka, Akito; Ogura, Koichi; Orimo, Satoshi; Kado, Masataka; Yogo, Akifumi; Mori, Michiaki; Hayashi, Yukio; Bulanov, S. V.; et al.
no journal, ,
We obtain a highly collimated sub-MeV proton beam with divergence angle of 10 degrees during the interaction of a few terawatt table-top Titanium Sapphaire laser pulse with a thin-metalic foil. By using the proton beam, we obtain a good quality projection imaging of a micrometer size mesh structure. The quantitative characterization of the beam is carried out. The transverse emittance of the beam is obtained to be less than 0.1 
mm mrad.
Sasase, Masato*; Yamamoto, Hiroyuki; Okayasu, Satoru; Yamaguchi, Kenji; Shamoto, Shinichi; Hojo, Kiichi
no journal, ,
Radiation effects for film formation and nano-structural changes of iron disilicide thin films have been studied.
-FeSi substrate for MBEOuchi, Shinji*; Muroga, Masataka*; Udono, Haruhiko*; Yamada, Yoichi; Yamamoto, Hiroyuki; Kikuma, Isao*
no journal, ,
Thermal preannealing of single crystalline -FeSi substrate for MBE has been investigated to obtain better substrate for homo-epitaxial growth of -FeSi film.
-FeSi single crystalsWakaya, Ippei*; Muroga, Masataka*; Ouchi, Shinji*; Udono, Haruhiko*; Yamada, Yoichi; Yamamoto, Hiroyuki; Kikuma, Isao*
no journal, ,
RHEED observation of surface has been performed on -FeSi single crystals.
Sagisaka, Akito; Daido, Hiroyuki; Yogo, Akifumi; Ogura, Koichi; Orimo, Satoshi; Ma, J.-L.; Mori, Michiaki; Pirozhkov, A. S.; Takai, Mamiko; Oishi, Yuji*; et al.
no journal, ,
no abstracts in English
Ishino, Masahiko; Koike, Masato; Sano, Kazuo*
no journal, ,
no abstracts in English
Akahane, Yutaka; Aoyama, Makoto; Ogawa, Kanade; Tsuji, Koichi; Harimoto, Tetsuo*; Kawanaka, Junji*; Nishioka, Hajime*; Fujita, Masayuki*; Yamakawa, Koichi
no journal, ,
no abstracts in English