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Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*
no journal, ,
no abstracts in English
Oikawa, Masakazu*; Sato, Takahiro; Kashiwagi, Hirotsugu; Miyawaki, Nobumasa; Kurashima, Satoshi; Okumura, Susumu; Yokota, Wataru; Kamiya, Tomihiro
no journal, ,
no abstracts in English
Sasaki, Akira; Nishihara, Katsunobu*; Sunahara, Atsushi*; Nishikawa, Takeshi*; Koike, Fumihiro*; Kagawa, Takashi*; Tanuma, Hajime*
no journal, ,
no abstracts in English
Yamauchi, Toshihiko; Nakagaki, Keita*; Kanno, Yoshinori*; Kobayashi, Seiji*; Saigusa, Mikio*; Takemoto, Ryo*; Yamashita, Naohito*; Kawashima, Tomohiro*
no journal, ,
no abstracts in English
Takahashi, Masamitsu; Kaizu, Toshiyuki; Mizuki, Junichiro
no journal, ,
no abstracts in English
Saeki, Morihisa; Oba, Hironori; Yamada, Yoichi; Yamamoto, Hiroyuki; Esaka, Fumitaka; Yokoyama, Atsushi
no journal, ,
no abstracts in English
Sagisaka, Akito; Daido, Hiroyuki; Yogo, Akifumi; Ogura, Koichi; Orimo, Satoshi; Ma, J.-L.; Mori, Michiaki; Pirozhkov, A. S.; Takai, Mamiko; Oishi, Yuji*; et al.
no journal, ,
no abstracts in English
-ray induced interface trapsOshima, Takeshi; Hishiki, Shigeomi; Iwamoto, Naoya; Kawano, Katsuyasu*; Ito, Hisayoshi
no journal, ,
p-channel silicon carbide (SiC) metal-oxide-semiconductor field effect transisters were irradiated with -rays at dose rate of 0.87
8.70kGy/h at room temperature. As a result of electrical characteristics measurements, it was found that the channel mobility decreased with the density of interface traps. By thermal annealing up to 400
C, the density of interface traps generated by -rays decreases and as a result, the recovery of channel mobilty were obsereved. Threshold volatge also recovered by the thermal annealing.
Koike, Masato; Ishino, Masahiko; Imazono, Takashi
no journal, ,
no abstracts in English
Ishino, Masahiko; Koike, Masato; Sano, Kazuo*
no journal, ,
no abstracts in English
Akahane, Yutaka; Aoyama, Makoto; Ogawa, Kanade; Tsuji, Koichi; Harimoto, Tetsuo*; Kawanaka, Junji*; Nishioka, Hajime*; Fujita, Masayuki*; Yamakawa, Koichi
no journal, ,
no abstracts in English
adsorption on Si(111)-7
7 at room temperatureYoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
We found that the metastable adsorbate was assigned to be the molecularly adsorbate normally observed in oxygen adsorption process on Si(111)-77 at room temperature exsisting on Si adatoms having oxygen atoms at the backbond, thus it indicated that it is not precursor states in the dissociative adsorption process on clean Si(111)-77. Since the number of oxugen atoms at the backbond of Si adatom has not been clear due to only O1s XPS measurement, we studied the initial adsorption process based on the Si oxidation number by means of Si2p XPS measurement. All experiment were performed SUREAC2000 at BL23SU in SPring-8. The clean surface exposed in the oxygen gas ambient whose pressure was controlled by variable leak valve to be 5.310-7Pa. Real-time O1s and Si2p XPS measurement was performed. The Si
oxidation states was clearly observed at the observable condition of metastable adsorbate in Si2p XPS. This result indiacates that the metastable adsorbates is assigned to be ins-paul structure. Furthemore, when the metastable adsorbate disappeared, the Si
oxidation state was observed, thus the insx2-ad structure was formed via the oxygen dissociative process of ins-paul.
Tokura, Akio*; Maeda, Fumihiko*; Takagi, Daisuke*; Homma, Yoshikazu*; Yoshigoe, Akitaka; Teraoka, Yuden; Watanabe, Yoshio*; Kobayashi, Yoshihiro*
no journal, ,
no abstracts in English
Hashinokuchi, Michihiro*; Okada, Michio*; Moritani, Kosuke*; Teraoka, Yuden; Kasai, Toshio*
no journal, ,
no abstracts in English
Tagawa, Masahito*; Sogo, Chie*; Yokota, Kumiko*; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
no abstracts in English
2 surfacesTogashi, Hideaki*; Takahashi, Yuya*; Kato, Atsushi*; Konno, Atsushi*; Suemitsu, Maki*; Asaoka, Hidehito; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
no abstracts in English
2Yamamoto, Yoshihisa*; Togashi, Hideaki*; Konno, Atsushi*; Kato, Atsushi*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka
no journal, ,
no abstracts in English
Onoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Hishiki, Shigeomi; Iwamoto, Naoya; Mishima, Kenta; Kawano, Katsuyasu*
no journal, ,
no abstracts in English
-FeSi
fabricated by ion beam sputter deposition methodZhuravlev, A. V.; Yamamoto, Hiroyuki; Shimura, Kenichiro*; Yamaguchi, Kenji; Shamoto, Shinichi; Hojo, Kiichi; Terai, Takayuki*
no journal, ,
no abstracts in English
2 surfacesTakahashi, Yuya*; Togashi, Hideaki*; Kato, Atsushi*; Konno, Atsushi*; Suemitsu, Maki*; Asaoka, Hidehito; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
no abstracts in English