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Oral presentation

Enhancement of carbon diffusion caused by thermal oxidation on Si$$_{1-x}$$C$$_{x}$$ alloy layer/Si(001) surfaces

Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Harries, J.; Teraoka, Yuden; Takakuwa, Yuji*

no journal, , 

In this study, to clarify the behavior of C on the basis of the oxidation kinetics, the oxidation kinetics of an Si$$_{1-x}$$C$$_{x}$$ alloy layer was investigated by real-time photoelectron spectroscopy. The Si$$_{1-x}$$C$$_{x}$$ alloy layer was formed by exposing an Si(001) surface to ethylene (C$$_{2}$$H$$_{4}$$). Although the solubility of C in an Si bulk is as small as about 3.5 $$times$$ 10$$^{17}$$ cm$$^{-3}$$, it is reported that the solubility of C can be increased by about 10$$^{4}$$ times due to the dimerization-induced strain. This makes it possible to form an Si$$_{1-x}$$C$$_{x}$$ alloy layer on the Si(001) surface with x up to 0.2 but within only the first several Si layers. From a comparison between the changes in the depth profile of C and oxygen uptake, the enhancement of C diffusion is considered in terms of the oxidation-induced strain.

Oral presentation

In situ X-ray diffraction study of lateral and vertical structures of InAs/GaAs(001) quantum dots

Takahashi, Masamitsu

no journal, , 

Oral presentation

Epitaxy of graphene on Si substrates toward three-dimensional graphene devices

Fukidome, Hirokazu*; Miyamoto, Yu*; Handa, Hiroyuki*; Takahashi, Ryota*; Imaizumi, Kei*; Suemitsu, Maki*; Yoshigoe, Akitaka; Teraoka, Yuden

no journal, , 

Graphene, two-dimensional network of sp$$^{2}$$ carbon, is one of promising materials beyond CMOS, as described in the semiconductor roadmap. The major issue is a lack of reasonable process for epitaxial growth on substrates. In fact, current production methods, such as exfoliation from graphite and epitaxy on SiC single crystals, are not mass-productive. We are seeking the ways to develop graphene-on-silicon (3D-GOS) process to match recent trends of silicon technologies. One of key issues toward 3D-GOS is the formation of epitaxial graphene on main plane directions of silicon, such as (100), (110) and (111). In this article, large area epitaxy of graphene on Si(110), Si(100) and Si(111) is presented. The result must be a good news because it can open new and realistic ways to three-dimensionally fabricate graphene-based devices beyond CMOS.

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