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Journal Articles

Charge enhancement effects in 6H-SiC MOSFETs induced by heavy ion strike

Onoda, Shinobu; Makino, Takahiro; Iwamoto, Naoya*; Vizkelethy, G.*; Kojima, Kazutoshi*; Nozaki, Shinji*; Oshima, Takeshi

IEEE Transactions on Nuclear Science, 57(6), p.3373 - 3379, 2010/12

no abstracts in English

Journal Articles

Characterization of microdose damage caused by single heavy ion observed in trench type power MOSFETs

Kuboyama, Satoshi*; Maru, Akifumi*; Ikeda, Naomi*; Hirao, Toshio; Tamura, Takashi*

IEEE Transactions on Nuclear Science, 57(6), p.3257 - 3261, 2010/12

 Times Cited Count:16 Percentile:72.46(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

DICE-based flip-flop with SET pulse discriminator on a 90 nm bulk CMOS process

Maru, Akifumi*; Shindo, Hiroyuki*; Ebihara, Tsukasa*; Makihara, Akiko*; Hirao, Toshio; Kuboyama, Satoshi*

IEEE Transactions on Nuclear Science, 57(6), p.3602 - 3608, 2010/12

 Times Cited Count:11 Percentile:62.45(Engineering, Electrical & Electronic)

no abstracts in English

Oral presentation

Digital single event transient pulse-widths estimation in logic cells from heavy-ion-induced transient currents in a single MOSFET

Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Ikeda, Hirokazu*; Hirose, Kazuyuki*

no journal, , 

no abstracts in English

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