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1 surface in atmosphereYoshigoe, Akitaka
Japanese Journal of Applied Physics, 59(SM), p.SMMB05_1 - SMMB05_5, 2020/07
Times Cited Count：0 Percentile：0.00(Physics, Applied)This study presents the results on synchrotron radiation photoelectron spectroscopy (SR-XPS) analysis of oxides formed in the air on a well-defined clean Ge(100)21 surface prepared in UHV condition. Owing to high energy-resolution SR-XPS, detailed chemical information on Ge oxidation states at the Ge surface was clarified. The result showed that the water vapor in the atmosphere plays an important role to progress slow oxidation of the Ge surface. We believe that the data obtained in this study is valuable for the basic understanding of the formation mechanisms of native oxides at the Ge surfaces.
Ogawa, Shuichi*; Yoshigoe, Akitaka; Tang, J.*; Sekihata, Yuki*; Takakuwa, Yuji*
Japanese Journal of Applied Physics, 59(SM), p.SM0801_1 - SM0801_42, 2020/07
Times Cited Count：7 Percentile：37.82(Physics, Applied)In this paper, we review the study of the unified Si oxidation reaction model mediated by point defect generation, in which O
dissociative adsorption occurs at dangling bonds of point defects (emitted Si atoms and vacancies) at the SiO/Si interface, and the point defect generation rate is given by a combination of oxidation-induced strain, thermal strain due to the difference in thermal expansion coefficient between Si and SiO, thermal excitation of Si emission rate, and heat of adsorption.
Nozaki, Mikito*; Terashima, Daiki*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
Japanese Journal of Applied Physics, 59(SM), p.SMMA07_1 - SMMA07_7, 2020/07
Times Cited Count：5 Percentile：21.80(Physics, Applied)AlGaN/GaN metal-oxide-semiconductor (MOS) structures were fabricated by low-power inductively coupled plasma reactive ion etching and chemical vapor deposition of SiO dielectrics on the etched surfaces, and they were systematically investigated by physical and electrical characterizations in an effort to develop a low-damage recessed gate process. The comprehensive research demonstrates the significant advantages of the proposed low-damage recessed gate process for fabricating next-generation AlGaN/GaN MOS-HFET devices.
