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Journal Articles

Low-temperature epitaxial growth of [Fe$$_{3}$$Si/SiGe]$$_{n}$$ (n = 1-2) multi-layered structures for spintronics application

Sado, Taizo*; Ueda, Koji*; Ando, Yuichiro*; Kumano, Mamoru*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*

ECS Transactions, 11(6), p.473 - 479, 2007/00

https://doi.org/10.1149/1.2778404

Our recent progresses in epitaxial growth of Fe$$_{3}$$Si on Ge substrates are reviewed. Single crystalline Fe$$_{3}$$Si layers with atomically flat interfaces were achieved on Ge(111) substrates by optimizing growth conditions at low temperatures (60$$sim$$200 $$^{circ}$$C). Thermal stability of it was guaranteed up to 400 $$^{circ}$$C. In addition, epitaxial growth of mixed layers composed of Fe$$_{3}$$Si, FeGe, and FeSi on Ge substrates at 400 $$^{circ}$$C is reported. Finally, epitaxial growth of Fe$$_{3}$$Si/Ge/Fe$$_{3}$$Si/Ge structures is discussed. These results will be a powerful tool to open up SiGe related spintronics.

Journal Articles

Effect of Fe/Si ratio on epitaxial growth of Fe$$_{3}$$Si on Ge substrate

Kumano, Mamoru*; Ando, Yuichiro*; Ueda, Koji*; Sado, Taizo*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*

ECS Transactions, 11(6), p.481 - 485, 2007/00

https://doi.org/10.1149/1.2778405

The effects of the Fe/Si ratios on molecular beam epitaxy (MBE) of Fe$$_{3}$$Si on Ge substrate have been investigated in a wide range of growth temperatures (60$$sim$$300 $$^{circ}$$C). From XRD measurements, it was found that Fe$$_{3}$$Si layers were epitaxially grown on Ge(111) substrates at 60$$sim$$200 $$^{circ}$$C under the stoichiometric (Fe:Si = 3:1) and non-stoichiometric (Fe:Si = 4:1) conditions. From RBS measurement, it was found that atomic mixing of Fe and Ge at Fe$$_{3}$$Si/Ge interfaces began at a growth temperature of 300 $$^{circ}$$C. In the case of MBE under the stoichiometric condition, the crystallinity of Fe$$_{3}$$Si is significantly improved compared to the non-stoichiometric condition. As a result, very low $$chi$$$$_{min}$$ was obtained in a wide temperature (60$$sim$$200 $$^{circ}$$C) under the stoichiometric condition. From the transmission electron microscopy measurements, it was shown that high-quality DO3-type Fe$$_{3}$$Si/Ge structures with atomically flat interfaces were realized at a low temperature ($$sim$$200 $$^{circ}$$C) under the stoichiometric condition.

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