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Journal Articles

Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H- and 6H-silicon carbide

Weidner, M.*; Frank, T.*; Pensl, G.*; Kawasuso, Atsuo; Ito, Hisayoshi; Krause-Rehberg, R.*

Physica B; Condensed Matter, 308-310, p.633 - 636, 2001/12

 Times Cited Count:27 Percentile:21.11

no abstracts in English

Journal Articles

Illumination effects in irradiated 6H n-type SiC observed by positron annihilation spectroscopy

Redmann, F.*; Kawasuso, Atsuo; Petters, K.*; Ito, Hisayoshi; Krause-Rehberg, R.*

Physica B; Condensed Matter, 308-310, p.629 - 632, 2001/12

 Times Cited Count:3 Percentile:75.6

no abstracts in English

Journal Articles

Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Sperr, P.*; Krause-Rehberg, R.*; Triftsh$"a$user, W.*; Pensl, G.*

Physica B; Condensed Matter, 308-310, p.660 - 663, 2001/12

 Times Cited Count:12 Percentile:41.77

no abstracts in English

Journal Articles

Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions

Oshima, Takeshi; Uedono, Akira*; Abe, Hiroshi; Chen, Z. Q.*; Ito, Hisayoshi; Yoshikawa, Masahito; Abe, Koji*; Eryu, Osamu*; Nakashima, Kenshiro*

Physica B; Condensed Matter, 308-310, p.652 - 655, 2001/12

 Times Cited Count:6 Percentile:59.86

Co-implantation of Al(2E18/cm3) and C(1E18/cm3) into 6H-SiC and subsequent thermal annealing up to 1650 C werer carried out. Vacancy-type defects in the implanted layer were studied by monoenergetic positron beams. The mean size of vacancy-type defects in as-implanted samples is found to be close to the size of divacancy. Although vacancy clsters near a surface region were created by 1000 C-annealing, clustering is suppressed in a deep region.The mean size of vacancys decrease by annealing above 1000 C, and major vacancy defects annealed out after annealing at 1400 C. No significant difference in defect annealing between only Al- and co-implanted samles was observed.This result suggests that electrical activation of Al is enhanced by the site competition mechanism.

Journal Articles

Deep-level transient spectroscopy analysis of proton-irradiated n$$^{+}$$/p InGaP solar cell

Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, K.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Physica B; Condensed Matter, 308-310, p.1181 - 1184, 2001/12

 Times Cited Count:6 Percentile:59.86

Carrier concentration and defects in n+/p InGaP irradiated with 100keV-protons (1E10, 5E12 /cm2) were studied.As a result of C-V measurements, the carrier removal rate was estimated to be 6.1E4 /cm2 which was extremely high as compared to 1MeV-electron irradiation case (0.93 /cm). H1 peak whose energy corresponds to Ev+0.90V was obtained from DLTS measurements. This suggests that carrier removal rate in proton-irradiated ones is much higher than that in electron-irradiated ones due to the generation of the defects (H1 peak) which act as majority carrier traps.

Journal Articles

Induced lattice defects in InGaAs laser diodes by high-temperature $$gamma$$-ray irradiation

Oyama, Hidenori*; Hirao, Toshio; Simoen, E.*; Claeys, C.*; Onoda, Shinobu; Takami, Yasukiyo*; Ito, Hisayoshi

Physica B; Condensed Matter, 308-310, p.1185 - 1188, 2001/12

 Times Cited Count:8 Percentile:52.58

no abstracts in English

Journal Articles

Impact of lattice defects on the preformance degradation of Si photodiodes by high-temperature $$gamma$$ and electron irradiation

Oyama, Hidenori*; Hirao, Toshio; Simoen, E.*; Claeys, C.*; Onoda, Shinobu*; Takami, Yasukiyo*; Ito, Hisayoshi

Physica B; Condensed Matter, 308-310, p.1226 - 1229, 2001/12

 Times Cited Count:29 Percentile:23.87

no abstracts in English

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