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Weidner, M.*; Frank, T.*; Pensl, G.*; Kawasuso, Atsuo; Ito, Hisayoshi; Krause-Rehberg, R.*
Physica B; Condensed Matter, 308-310, p.633 - 636, 2001/12
Times Cited Count：29 Percentile：78.16(Physics, Condensed Matter)no abstracts in English
Redmann, F.*; Kawasuso, Atsuo; Petters, K.*; Ito, Hisayoshi; Krause-Rehberg, R.*
Physica B; Condensed Matter, 308-310, p.629 - 632, 2001/12
Times Cited Count：3 Percentile：22.26(Physics, Condensed Matter)no abstracts in English
Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Sperr, P.*; Krause-Rehberg, R.*; Triftsh
user, W.*; Pensl, G.*
Physica B; Condensed Matter, 308-310, p.660 - 663, 2001/12
Times Cited Count：13 Percentile：57.90(Physics, Condensed Matter)no abstracts in English
Oshima, Takeshi; Uedono, Akira*; Abe, Hiroshi; Chen, Z. Q.*; Ito, Hisayoshi; Yoshikawa, Masahito; Abe, Koji*; Eryu, Osamu*; Nakashima, Kenshiro*
Physica B; Condensed Matter, 308-310, p.652 - 655, 2001/12
Times Cited Count：6 Percentile：37.46(Physics, Condensed Matter)Co-implantation of Al(2E18/cm3) and C(1E18/cm3) into 6H-SiC and subsequent thermal annealing up to 1650 C werer carried out. Vacancy-type defects in the implanted layer were studied by monoenergetic positron beams. The mean size of vacancy-type defects in as-implanted samples is found to be close to the size of divacancy. Although vacancy clsters near a surface region were created by 1000 C-annealing, clustering is suppressed in a deep region.The mean size of vacancys decrease by annealing above 1000 C, and major vacancy defects annealed out after annealing at 1400 C. No significant difference in defect annealing between only Al- and co-implanted samles was observed.This result suggests that electrical activation of Al is enhanced by the site competition mechanism.
/p InGaP solar cellDharmarasu, N.*; Yamaguchi, Masafumi*; Khan, K.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*
Physica B; Condensed Matter, 308-310, p.1181 - 1184, 2001/12
Times Cited Count：7 Percentile：41.30(Physics, Condensed Matter)Carrier concentration and defects in n+/p InGaP irradiated with 100keV-protons (1E10, 5E12 /cm2) were studied.As a result of C-V measurements, the carrier removal rate was estimated to be 6.1E4 /cm2 which was extremely high as compared to 1MeV-electron irradiation case (0.93 /cm). H1 peak whose energy corresponds to Ev+0.90V was obtained from DLTS measurements. This suggests that carrier removal rate in proton-irradiated ones is much higher than that in electron-irradiated ones due to the generation of the defects (H1 peak) which act as majority carrier traps.
-ray irradiationOyama, Hidenori*; Hirao, Toshio; Simoen, E.*; Claeys, C.*; Onoda, Shinobu; Takami, Yasukiyo*; Ito, Hisayoshi
Physica B; Condensed Matter, 308-310, p.1185 - 1188, 2001/12
Times Cited Count：8 Percentile：44.87(Physics, Condensed Matter)no abstracts in English
and electron irradiationOyama, Hidenori*; Hirao, Toshio; Simoen, E.*; Claeys, C.*; Onoda, Shinobu*; Takami, Yasukiyo*; Ito, Hisayoshi
Physica B; Condensed Matter, 308-310, p.1226 - 1229, 2001/12
Times Cited Count：31 Percentile：79.61(Physics, Condensed Matter)no abstracts in English
