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Journal Articles

Defect layer in SiO$$_2$$-SiC interface proved by a slow positron beam

Maekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Miyashita, Atsumi; Suzuki, Ryoichi*; Odaira, Toshiyuki*

Physica B; Condensed Matter, 376-377, p.354 - 357, 2006/04

 Times Cited Count:2 Percentile:86.49(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Effects of a low-energy proton irradiation on n$$^{+}$$/p-AlInGaP solar cells

Lee, H. S.*; Yamaguchi, Masafumi*; Ekins-Daukes, N. J.*; Khan, A.*; Takamoto, Tatsuya*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi

Physica B; Condensed Matter, 376-377, p.564 - 567, 2006/04

 Times Cited Count:2 Percentile:86.49(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Identification of divacancies in 4H-SiC

Son, N. T.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; et al.

Physica B; Condensed Matter, 376-377, p.334 - 337, 2006/04

 Times Cited Count:3 Percentile:80.94(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Positron study of electron irradiation-induced vacancy defects in SiC

Kawasuso, Atsuo; Yoshikawa, Masahito; Ito, Hisayoshi; Krause-Rehberg, R.*; Redmann, F.*; Higuchi, Takatoshi*; Betsuyaku, Kiyoshi*

Physica B; Condensed Matter, 376-377, p.350 - 353, 2006/04

 Times Cited Count:11 Percentile:50.66(Physics, Condensed Matter)

In this presentation, we report identification of vacancy defects in cubic and hexagonal SiC irradiated with fast electrons through electron-pisitron momentum distribution measurements and theoretical analyses. In cubic SiC isolated silicon vacancies are responsible for positron trapping. The lifetime of positrons trapped at silicon vacancies is prolonged due to the outward lattice relaxation. Because of the local tetrahedral symmetry of silicon vacancies, the observed momentum distributions are consistently explained. In the case of hexagonal SiC, one particular vacancy defects appearing after annealing of isolated silicon vacancies have dangling bonds along the c-axis. From the enhancement of positron annihilation probability with carbon 1s electrons, the above defects are attributed to carbon-vacancy-antisite-carbon complexes.

Journal Articles

Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H-SiC

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

Physica B; Condensed Matter, 376-377, p.342 - 345, 2006/04

 Times Cited Count:8 Percentile:59.35(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Electron irradiation-induced defects in ZnO studied by positron annihilation

Chen, Z. Q.*; Maekawa, Masaki; Kawasuso, Atsuo; Sakai, Seiji; Naramoto, Hiroshi

Physica B; Condensed Matter, 376-377, p.722 - 725, 2006/04

 Times Cited Count:17 Percentile:37.73(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Isolated hydrogen center in wide gap semiconductors studied by $$mu$$SR

Shimomura, Koichiro*; Kadono, Ryosuke*; Nishiyama, Kusuo*; Watanabe, Isao*; Suzuki, Takao*; Pratt, F.*; Oishi, Kazuki; Mizuta, Masashi*; Saito, Mineo*; Chow, K. H.*; et al.

Physica B; Condensed Matter, 376-377, p.444 - 446, 2006/04

 Times Cited Count:1 Percentile:92.88(Physics, Condensed Matter)

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