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Fukaya, Yuki; Entani, Shiro; Sakai, Seiji; Mochizuki, Izumi*; Wada, Ken*; Hyodo, Toshio*; Shamoto, Shinichi
no journal, ,
no abstracts in English
/Si(001) and SiO/Si(111) interfaces studied by X-ray photoelectron spectroscopy and scanning tunnelling microscopyTang, J.*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Teraoka, Yuden; Takakuwa, Yuji*
no journal, ,
Thermal decomposition of SiO layers formed on Si substrate is well known to proceed via the inhomogeneous void nucleation and subsequent 2D enlargement. However, the void nucleation mechanism is still not clear yet. In this study, the thermal decomposition kinetics of SiO/Si(001) and SiO/Si(111) were observed in real time by X-ray photoelectron spectroscopy using synchrotron radiation at SPring-8 to obtain simultaneously information on the interfacial strained Si atom as well as the oxide thickness and oxidation states.
Honda, Mitsunori; Shimoyama, Iwao; Okamoto, Yoshihiro; Suzuki, Shinichi; Yaita, Tsuyoshi
no journal, ,
no abstracts in English
Al(210) surface induced by supersonic oxygen molecular beam at room temperatureXu, Y.*; Demura, Masahiko*; Teraoka, Yuden; Yoshigoe, Akitaka; Sakurai, Junya*; Hirano, Toshiyuki*
no journal, ,
The initial oxidation behavior of a clean NiAl (210) surface was studied at 300 K using a supersonic O molecular beam (O SSMB) having an O translational energy of 2.3 eV, and real-time photoemission spectroscopy performed with high-brilliance synchrotron radiation. The evolution behaviors of the O 1s, Ni 2p, Al 2p, and Ni 3p spectra were examined over time during irradiation with the O SSMB. The spectral analysis revealed that both the Al atoms and the Ni atoms on the surface were oxidized; however, the oxidation of Al progressed much faster than that of Ni.
Asaoka, Hidehito; Uozumi, Yuki
no journal, ,
We have succeeded in measurements of the surface stress in Si(111) as a function of 7 
7 reconstruction by comparison with the H-terminated Si(111) 1 1 surface and a detail stress evolution during initial nanodot growth stage of Ge growth on Si(111). The stress evolutions are observed by measuring the curvature of free-standing substrates which allows ideally unconstrained bending. As a result, we find the Si(111) 1 1 surface releases 1.4 eV/(1 1 unit cell) of the surface energy from the strong tensile Si(111) 7 7 reconstruction. Moreover, a stress evolution has been found to exist in the early stage of the nanodot formation, which is concurrent with onset of the surface roughening of the wetting layer and of the dislocations in the Ge nanodots.