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Journal Articles

Bandgaps of Ga$$_{1-x}$$In$$_x$$N by all-electron GWA calculation

Usuda, Manabu; Hamada, Noriaki*; Shiraishi, Kenji*; Oshiyama, Atsushi*

Physica Status Solidi (C), 0(7), p.2733 - 2736, 2003/12

https://doi.org/10.1002/pssc.200303278
 Times Cited Count：2 Percentile：67.47(Crystallography)

The electronic band-structures of wurtzite-type Ga$$_{1-x}$$In$$_x$$N are calculated by using an all-electron FLAPW method in the $$GW$$ approximation(GWA). Our calculations show that the bandgap of InN is smaller than 1 eV, and strongly support the recently observed smaller bandgaps.

Journal Articles

Improvement of luminescence capability of Tb$$^{3+}$$-related emission by Al$$_{x}$$Ga$$_{1-x}$$N

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi

Physica Status Solidi (B), 240(2), p.372 - 375, 2003/11

https://doi.org/10.1002/pssb.200303479
 Times Cited Count：19 Percentile：64.46(Physics, Condensed Matter)

Luminescence propeties of Tb-doped Al$$_{x}$$Ga$$_{1-x}$$N were studied. The samples were grown on sapphire substrates using OMVPE. Tb implantation was cariied out to introduce Tb into samples. After implantation, samples were annealed at 1000 to 1150 $$^{o}$$C in 10% NH$$_{3}$$ diluted with N$$_{2}$$. The luminescence intensity for Al$$_{x}$$Ga$$_{1-x}$$N x=0.1 is 5 times stronger than that for x=0 at 14 K. The luminesecence intensity for GaN rapidly decreases with temperature and its activation enegy is 7.8 meV. With increasing Al content, the activation enegy increases, and the activation energy for Al$$_{0.1}$$Ga$$_{0.9}$$N is 70 meV.

Journal Articles

Effects of Al composition on luminescence properties of europium implanted Al$$_{x}$$Ga$$_{1-x}$$N(0$$<$$x$$<$$1)

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Shibata, Tomohiko*; Tanaka, Mitsuhiro*

Physica Status Solidi, 0(7), p.2623 - 2626, 2003/07

In our previous study, it was reported that Eu-doped Nitride semiconductors show luminescence propetires. In this study, we investigate the relationship between luminescence properties and Al composition using Al$$_{x}$$Ga$$_{1-x}$$N(0$$<$$x$$<$$1). Al$$_{x}$$Ga$$_{1-x}$$N were grown using OMVPE. Eu atoms were doped into the samples by ion implantation (200keV). After implantation, the samples were annealed to remove residual damege. Luminescence propreties of the samples were measured using photoluminescence and cathodeluminescence. As a result, luminescence at 621 nm which relates 4f-4f transition were observed for all samples (x=0 to 1). As for intensity, samples with x=0.5 show the strongest luminescence. This result can be interpreted in terms of the internal stress of crystals by the existence of Al atoms.

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