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Journal Articles

Degradation of charge collection efficiency obtained for 6H-SiC n $^{+}$ p diodes irradiated with gold ions

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; Tanaka, Reisaburo*; et al.

Materials Science Forum, 556-557, p.913 - 916, 2007/00

https://doi.org/10.4028/www.scientific.net/MSF.556-557.913

Times Cited Count：4 Percentile：75.64(Materials Science, Ceramics)

no abstracts in English

Journal Articles

Generation of amorphous SiO $_{2}$ /SiC interface structure by the first-principles molecular dynamics simulation

Miyashita, Atsumi; Onuma, Toshiharu*; Iwasawa, Misako*; Tsuchida, Hidekazu*; Yoshikawa, Masahito

Materials Science Forum, 556-557, p.521 - 524, 2007/00

SiC semiconductor devices are expected to be used in severe environments. However, SiC devices don't present the theoretically expected performance. This is considered to be attributed to the SiO $_{2}$ /SiC interface defects that reduce electrical characteristics of devices. To generate the real device interface structure with the computer simulation, it is important to construct the a-SiO $_{2}$ structure on SiC. The slab model using 444 atoms for a-SiO $_{2}$ on a 4H-SiC (0001) crystal layer was constructed by using first-principles MD simulation. The heating and rapid quenching method was carried out to make an a-SiO $_{2}$ /SiC interface structure. The heating temperature, the heating time and the speed of rapid quenching is 4000 K, 3.0 ps and -1000 K/ps, respectively. The interatomic distance and the bond angles of SiO $_{2}$ layers agreed well with the most probable values in bulk a-SiO $_{2}$ , and there were no coordination defects in the neighborhood of the SiC substrate.

Journal Articles

Dynamical simulation of SiO $_{2}$ /4H-SiC(0001) interface oxidation process; From first-principles

Onuma, Toshiharu*; Miyashita, Atsumi; Iwasawa, Misako*; Yoshikawa, Masahito; Tsuchida, Hidekazu*

Materials Science Forum, 556-557, p.615 - 620, 2007/00

We performed the dynamical simulation of the SiO $_{2}$ /4H-SiC(0001) interface oxidation process using first-principles molecular dynamics based on plane waves and the slab model supercells method. The heat-and-cool method is used to prepare the initial interface structure. In this structure, there is no transition oxide layer or dangling bond at the SiO $_{2}$ /SiC interface. As the trigger of the oxidation process, the carbon vacancy is introduced in the SiC layer near the interface. The oxygen molecules are added one by one to the empty sphere in the SiO $_{2}$ layer near the interface in the oxidation process simulation. The molecular dynamics simulation is carried out at 2500 K. The oxygen molecule is dissociated and forms bonds with the Si atom in the SiO $_{2}$ layer. The atoms of Si in the SiC layer at the SiO $_{2}$ /4H-SiC(0001) interface are oxidized. Carbon clusters are formed in the interface layer. Oxygen molecules react with the carbon clusters and formed CO molecules.

Journal Articles