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Fukaya, Yuki; Kawasuso, Atsuo; Hayashi, Kazuhiko; Ichimiya, Ayahiko
Applied Surface Science, 237(1-4), p.29 - 33, 2004/10
no abstracts in English
Hayashi, Kazuhiko; Fukaya, Yuki; Kawasuso, Atsuo; Ichimiya, Ayahiko
Applied Surface Science, 237(1-4), p.34 - 39, 2004/10
no abstracts in English
Baba, Yuji; Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Nath, K. G.
Applied Surface Science, 237(1-4), p.176 - 180, 2004/10
Times Cited Count:7 Percentile:38.14(Chemistry, Physical)no abstracts in English
Takahashi, Masamitsu; Yoneda, Yasuhiro; Mizuki, Junichiro
Applied Surface Science, 237(1-4), p.219 - 223, 2004/10
Times Cited Count:5 Percentile:30.22(Chemistry, Physical)The GaAs(001)- reconstructed surface was investigated by in situ surface X-ray diffraction. The sample was subjected to measurements under molecular-beam epitaxy conditions without being transferred another chamber. Several X-ray diffraction patterns were measured with increasing the substrate temperature within the
-phase of GaAs(001)-
in a constant As flux of 5
10
Torr. At relatively low temperatures up to 545
C, the observed X-ray diffraction patterns agree well to the
2(2
4) surface. However, a different X-ray diffraction pattern was obtained at 585
C, while the
periodicity still persited. This change is explained by partial As-dimer desorption which results in a mixture of the
2(2
4) and
2(2
4) structures.
Kasukabe, Yoshitaka*; Wang, J. J.*; Yamamura, Tsutomu*; Yamamoto, Shunya; Fujino, Yutaka*
Thin Solid Films, 464-465, p.180 - 184, 2004/10
Times Cited Count:9 Percentile:44.53(Materials Science, Multidisciplinary)no abstracts in English
Wang, J. J.*; Kasukabe, Yoshitaka*; Yamamura, Tsutomu*; Yamamoto, Shunya; Fujino, Yutaka*
Thin Solid Films, 464-465, p.175 - 179, 2004/10
Times Cited Count:1 Percentile:7.25(Materials Science, Multidisciplinary)no abstracts in English