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論文

Radiation response of silicon carbide metal-oxide-semiconductor transistors in high dose region

大島 武; 横関 貴史; 村田 航一; 松田 拓磨; 三友 啓; 阿部 浩之; 牧野 高紘; 小野田 忍; 土方 泰斗*; 田中 雄季*; et al.

Japanese Journal of Applied Physics, 55(1S), p.01AD01_1 - 01AD01_4, 2016/01

 被引用回数:6 パーセンタイル:43.79(Physics, Applied)

In this study, we report the effects of $$gamma$$-ray irradiation and subsequent annealing on the electrical characteristics of vertical structure power 4H Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with the blocking voltage of 1200 V. The MOSFETs were irradiated with $$gamma$$-rays up to 1.2 MGy in a N$$_{2}$$ atmosphere at room temperature (RT). During the irradiation, no bias was applied to each electrode of the MOSFETs. After the irradiation, the MOSFETs were kept at RT for 240 h to investigate the stability of their degraded characteristics. Then, the irradiated MOSFETs were annealed up to 360 $$^{circ}$$C in the atmosphere. The current-voltage (I-V) characteristics of the MOSFETs were measured at RT. By 1.2 MGy irradiation, the shift of threshold voltage (V$$_{T}$$) for the MOSFETs was -3.39 V. After RT preservation for 240 h, MOSFETs showed no significant recovery in V$$_{T}$$. By annealing up to 360 $$^{circ}$$C, the MOSFETs showed remarkable recovery, and the values of V$$_{T}$$ become 91 % of the initial values. Those results indicate that the degraded characteristics of SiC MOSFETs can be recovered by thermal annealing at 360 $$^{circ}$$C.

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