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Journal Articles

Optimization for SEU/SET immunity on 0.15 $$mu$$m fully depleted CMOS/SOI digital logic devices

Makihara, Akiko*; Asai, Hiroaki*; Tsuchiya, Yoshihisa*; Amano, Yukio*; Midorikawa, Masahiko*; Shindo, Hiroyuki*; Kuboyama, Satoshi*; Onoda, Shinobu; Hirao, Toshio; Nakajima, Yasuhito*; et al.

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.95 - 98, 2006/10

no abstracts in English

Journal Articles

Observation of charge collection efficiency of 6H-SiC n$$^{+}$$p diodes irradiated with Au-ions

Iwamoto, Naoya; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; et al.

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.185 - 188, 2006/10

no abstracts in English

Journal Articles

Performance recovery of proton-irradiated III-V solar cells by current injection

Sato, Shinichiro; Miyamoto, Haruki; Oshima, Takeshi; Imaizumi, Mitsuru*; Morioka, Chiharu*; Kawano, Katsuyasu*; Ito, Hisayoshi

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.161 - 164, 2006/10

The performance recovery of III-V solar cells irradiated with protons by current injection was investigated. InGaP/GaAs/Ge triple-junction (3J) solar cells were irradiated with 50keV protons at 1$$times$$10$$^{12}$$ or 10MeV protons at 1$$times$$10$$^{10}$$ions/cm$$^{2}$$ at room temperature. Then, the recoveries of the electric (current-voltage: $$I$$-$$V$$) characteristics of these samples were investigated by forward current (minority carrier) injection. As a result, the open circuit voltage ($$V_{rm{oc}}$$) of these 3J solar cells was recovered although no significant change in their short circuit current ($$I_{rm{sc}}$$) was observed due to current injection. In addition, the samples irradiated with 50keV protons were recovered compared to the ones irradiated with 10MeV protons.

Journal Articles

Electron irradiation test method for the evaluation of space solar cells

Miyamoto, Haruki; Sato, Shinichiro; Oshima, Takeshi; Imaizumi, Mitsuru*; Morioka, Chiharu*; Ito, Hisayoshi; Kawano, Katsuyasu*

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.189 - 191, 2006/10

InGaP/GaAs/Ge triple-junction (3J) and Si single junction solar cells designed for space application were irradiated with 1.0 MeV- and 0.8 MeV-electrons at 1$$times$$10$$^{15}$$$$sim$$5$$times$$10$$^{15}$$/cm$$^{2}$$ in the atmosphere. The distance between the irradiation window and samples was changed from 20 to 50 cm. The accelerated electron energy changed from 1.0 to 0.93 MeV at the surface of samples with 20 cm below the irradiation window. This energy change caused by the energy attenuation of the Ti irradiation window and atmosphere. The electrical properties of solar cells were measured and compared before irradiation to after irradiation. No significant difference in the degradation of 3J solar cells due to electron irradiation was observed in energies range between 0.93 and 0.71 MeV. For Si solar cells, the value of degradation is the same in energies range between 0.93 and 0.87 MeV, however, the decrease in degradation was observed below 0.73 MeV.

Journal Articles

Electrical characteristics of p-channel 6H-SiC MOSFETs irradiated with $$gamma$$-rays

Hishiki, Shigeomi; Oshima, Takeshi; Iwamoto, Naoya; Kawano, Katsuyasu*; Ito, Hisayoshi

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.173 - 176, 2006/10

no abstracts in English

Journal Articles

Flight demonstration of Cu(In,Ga)Se$$_{2}$$ thin-film solar cells using micro-satellite

Kawakita, Shiro*; Imaizumi, Mitsuru*; Kibe, Koichi*; Oshima, Takeshi; Ito, Hisayoshi; Yoda, Shinichi*; Nakamura, Yuya*; Nakasuka, Shinichi*

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.61 - 64, 2006/10

no abstracts in English

Journal Articles

Analysis of radiation response and recovery characteristics of amorphous silicon solar cells

Shimazaki, Kazunori*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi; Kibe, Koichi*

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.49 - 52, 2006/10

no abstracts in English

Journal Articles

Si substrate suitable for radiation-resistant space solar cells

Matsuura, Hideharu*; Kawakita, Shiro*; Oshima, Takeshi; Ito, Hisayoshi

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.157 - 160, 2006/10

no abstracts in English

Journal Articles

Electron radiation-induced defects in lattice mismatched InGaAs solar cells

Sasaki, Takuo*; Takamoto, Tatsuya*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi; Yamaguchi, Masafumi*

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.165 - 168, 2006/10

no abstracts in English

Journal Articles

Study on optimum structure of AlInGaP top-cells for triple-junction space solar cells

Morioka, Chiharu*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi; Kibe, Koichi*

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.169 - 172, 2006/10

no abstracts in English

Journal Articles

Decrease in hole concentration in Al-doped 4H-SiC by irradiation of 200 keV electrons

Matsuura, Hideharu*; Minohara, Nobumasa*; Takahashi, Miyuki*; Oshima, Takeshi; Ito, Hisayoshi

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.181 - 184, 2006/10

no abstracts in English

Journal Articles

Effects of $$gamma$$ and heavy ion damage on the time-resolved gain of a low breakdown voltage Si avalanche photodiode

Laird, J. S.*; Onoda, Shinobu; Hirao, Toshio; Becker, H.*; Johnston, A.*; Ito, Hisayoshi

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.37 - 40, 2006/10

no abstracts in English

Journal Articles

Analysis of transient current in SiC diodes irradiated with MeV ions

Onoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Hishiki, Shigeomi; Mishima, Kenta; Iwamoto, Naoya; Kamiya, Tomihiro; Kawano, Katsuyasu*

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.115 - 118, 2006/10

no abstracts in English

Oral presentation

Operation / maintenance of JAEA electron accelerator

Hanaya, Hiroaki; Kaneko, Hirohisa; Haneda, Noriyuki; Yamagata, Ryohei; Seito, Hajime; Kojima, Takuji; Yamaguchi, Toshiyuki*; Kawashima, Ikuo*; Yagi, Norihiko*; Takagi, Masahide*

no journal, , 

no abstracts in English

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