Photoemission analysis with synchrotron radiation for nitridation of SiO thin film on Si(001) by irradiation of N ion beams

Teraoka, Yuden; Hachiue, Shunsuke; Yokota, Kumiko*; Tagawa, Masahito*

no journal, , 

The mass-selected atomic nitrogen ion beams with a kinetic energy of 3 keV were irradiated at the ultra-thin silicon dioide overlayers on Si(001) substrates by 6.310 to 2.010 particles/cm at room temperature. Chemical bonding states of Si, O, and N atoms were analyzed via photoemission spectroscopy using high brilliance and energy-resolution synchrotron radiation. Photoemission spectra of N-1s core level could be observed in addition to Si-2p and O-1s peaks owing to the high brilliance synchrotron radiation. It was found that the silicon dioide overlayer and the interface were effectively nitrided even by the dose of 10 particles/cm order as well as the Si(001) substrate.