Development of a fast-rising short-pulse high-voltage power supply using SiC-MOSFETs for the J-PARC kicker system

高柳 智弘; 小野 礼人*; 堀野 光喜*; 植野 智晶*; 杉田 萌; 不破 康裕; 篠崎 信一; 徳地 明*; 生駒 直弥*; 亀崎 広明*

no journal, , 

J-PARC has developed a new kicker power supply that takes advantage of the high-speed characteristics of SiC-MOSFETs and replaces the thyratron with a semiconductor-type switch. In addition, the three main components of the kicker power supply currently in operation, the silatron, PFN circuit, and end clipper, were combined on a single board as a new modular circuit board to achieve a smaller power supply. The modular circuit of the new power supply consists of two types of boards: a main board that forms trapezoidal pulses and a compensation board that compensates flatness droop. 32 main boards and 20 compensation boards are connected in series in a hierarchical manner to achieve the rated specifications required for the RCS kicker system. This presentation will report on the test results, power-saving characteristics of the next-generation semiconductor switch, and results of suppressing corona discharges that occur at high voltages.