JOPSS - Search Results

Search Results: Records 1-5 displayed on this page of 5

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Journal Articles

Study of thermal annealing of vacancies in ion implanted 3C-SiC by positron annihilation

Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Abe, Koji*; Suzuki, Ryoichi*; ; Aoki, Yasushi; Tanigawa, Shoichiro*; Yoshikawa, Masahito; Mikado, Tomohisa*; et al.

Mater. Sci. Forum, 264-268, p.745 - 748, 1998/00

no abstracts in English

Journal Articles

ESR studies of defects in P-type 6H-SiC irradiated with 3MeV-electrons

D.Cha*; Ito, Hisayoshi; Morishita, Norio; Kawasuso, Atsuo; Oshima, Takeshi; ; J.Ko*; K.Lee*; Nashiyama, Isamu

Mater. Sci. Forum, 264-268, p.615 - 618, 1998/00

no abstracts in English

Journal Articles

Hot-implantation of phosphorus ions into 6H-SiC

Abe, Koji*; Oshima, Takeshi; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Iwami, Motohiro*

Mater. Sci. Forum, 264-268, p.721 - 724, 1998/00

no abstracts in English

Journal Articles

Generation mechanisms of trapped charges in oxide layers of 6H-SiC MOS structures irradiated with -rays

Yoshikawa, Masahito; ; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; ; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Mater. Sci. Forum, 264-268, p.1017 - 1020, 1998/00

no abstracts in English

Journal Articles

Characterization of defects in electron irradiated 6H-SiC by positron lifetime and electron spin resonance

Kawasuso, Atsuo; Ito, Hisayoshi; Okada, Sohei; D.Cha*

Mater. Sci. Forum, 264-268, p.611 - 614, 1998/00

no abstracts in English