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Journal Articles

Radiation response of p-channel 6H-SiC MOSFETs fabricated using pyrogenic conditions

Lee, K. K.; Oshima, Takeshi; Ito, Hisayoshi

Materials Science Forum, 389-393, p.1097 - 1100, 2002/05

The effect of gamma-ray irradiation on electrical characteristics of n-channel and p-chanel enhancement type 6H-SiC MOSFET was studied. The gate oxide of the MOSFETs were formed using pyrogenic condition. Gamma-ray irradiation was carried out at room temperature at 8.8 kGy(SiO$$_{2}$$)/hour. The channel mobility and thrshold voltage for the MOSFETs were estimated from I$$_{D}$$-V$$_{D}$$ and I$$_{D}$$-V$$_{D}$$ curves, respectively. The channel mobility for n-channel one does not change up to 1MGy. The channel mobility for p-channel one increases around 40 kGy and decreases above 40 kGy. This behavior is interpreted in terms of the compensation of intrinsic interface traps by the interface traps generated by irradiation. The fluctuation of thershold voltage for n-channel one by irradiation is less than 0.5V. For p-channel one, the threshold voltage decreases with increasing irradiation dose.

Journal Articles

Effects of successive annealing of oxides on electrical characteristics of silicon carbide metal-oxide-semiconductor structures

Yoshikawa, Masahito; Sato, Mirei; Oshima, Takeshi; Ito, Hisayoshi

Materials Science Forum, 389-393, p.1009 - 1012, 2002/05

no abstracts in English

Journal Articles

Gamma-ray irradiation effects on the electrical characteristics of 6H-SiC MOSFETs with annealed gate-oxide

Oshima, Takeshi; Lee, K. K.; Oi, Akihiko; Yoshikawa, Masahito; Ito, Hisayoshi

Materials Science Forum, 389-393, p.1093 - 1096, 2002/05

Gamma-ray irradiation effects on the electrical characteristics such as threshold voltage (V$$_{T}$$) and channel mobility ($$mu$$) for 6H-SiC MOSFETs were studied.The gate oxide of the MOSFETs were annealed in hydrogen at 700 $$^{o}$$ or steam at 800 $$^{o}$$ in fabrication process to improve the initial electrical characteristics of the MOSFETs.As for the hydrogen-annealed MOSFETs,V$$_{T}$$ was changed from 0.9V to 3.1 V by irradiation at 530kGy.$$mu$$ decreased after irradiation above 60 kGy. As for the steam-annealed MOSFETs,V$$_{T}$$ was changed from 2.7 to 3.3 V by irradiation at 530kGy.$$mu$$ decreased above 180 kGy. This indicates that radiation resistance for the steam-annealed MOSFETs is higher than that for the hydrogen-annealed MOSFETs.

Journal Articles

Post-implantation annealing effects on the surface morphology and electrical characteristics of 6H-SiC implanted with aluminum

Oi, Akihiko; Oshima, Takeshi; Yoshikawa, Masahito; Lee, K. K.; Iwami, Motohiro*; Ito, Hisayoshi

Materials Science Forum, 389-393, p.831 - 834, 2002/05

no abstracts in English

Journal Articles

X-ray photoelectron spectroscopy studies of post-oxidation process effects on oxide/SiC interfaces

Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Yoshida, Sadafumi*

Materials Science Forum, 389-393, p.1033 - 1036, 2002/05

no abstracts in English

Journal Articles

Radiation-induced defects in 4H- and 6H-SiC epilayers studies by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Krause-Rehberg, R.*; Pensl, G.*; Sperr, P.*; Triftsh$"a$user, W.*; Ito, Hisayoshi

Materials Science Forum, 389-393, p.489 - 492, 2002/05

no abstracts in English

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