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Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Krause-Rehberg, R.*; Pensl, G.*; Sperr, P.*; Triftsh
user, W.*; Ito, Hisayoshi
Materials Science Forum, 389-393, p.489 - 492, 2002/05
no abstracts in English
Yoshikawa, Masahito; Sato, Mirei; Oshima, Takeshi; Ito, Hisayoshi
Materials Science Forum, 389-393, p.1009 - 1012, 2002/05
no abstracts in English
Oshima, Takeshi; Lee, K. K.; Oi, Akihiko; Yoshikawa, Masahito; Ito, Hisayoshi
Materials Science Forum, 389-393, p.1093 - 1096, 2002/05
Gamma-ray irradiation effects on the electrical characteristics such as threshold voltage (V
) and channel mobility (
) for 6H-SiC MOSFETs were studied.The gate oxide of the MOSFETs were annealed in hydrogen at 700 
or steam at 800 in fabrication process to improve the initial electrical characteristics of the MOSFETs.As for the hydrogen-annealed MOSFETs,V was changed from 0.9V to 3.1 V by irradiation at 530kGy. decreased after irradiation above 60 kGy. As for the steam-annealed MOSFETs,V was changed from 2.7 to 3.3 V by irradiation at 530kGy. decreased above 180 kGy. This indicates that radiation resistance for the steam-annealed MOSFETs is higher than that for the hydrogen-annealed MOSFETs.
Oi, Akihiko; Oshima, Takeshi; Yoshikawa, Masahito; Lee, K. K.; Iwami, Motohiro*; Ito, Hisayoshi
Materials Science Forum, 389-393, p.831 - 834, 2002/05
no abstracts in English
Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Yoshida, Sadafumi*
Materials Science Forum, 389-393, p.1033 - 1036, 2002/05
no abstracts in English
Lee, K. K.; Oshima, Takeshi; Ito, Hisayoshi
Materials Science Forum, 389-393, p.1097 - 1100, 2002/05
The effect of gamma-ray irradiation on electrical characteristics of n-channel and p-chanel enhancement type 6H-SiC MOSFET was studied. The gate oxide of the MOSFETs were formed using pyrogenic condition. Gamma-ray irradiation was carried out at room temperature at 8.8 kGy(SiO
)/hour. The channel mobility and thrshold voltage for the MOSFETs were estimated from I
-V and I-V curves, respectively. The channel mobility for n-channel one does not change up to 1MGy. The channel mobility for p-channel one increases around 40 kGy and decreases above 40 kGy. This behavior is interpreted in terms of the compensation of intrinsic interface traps by the interface traps generated by irradiation. The fluctuation of thershold voltage for n-channel one by irradiation is less than 0.5V. For p-channel one, the threshold voltage decreases with increasing irradiation dose.
/4H-SiC(0001) interfaceYamashita, Kenya*; Kitabatake, Makoto*; Kusumoto, Osamu*; Takahashi, Kunimasa*; Uchida, Masao*; Miyanaga, Ryoko*; Ito, Hisayoshi; Yoshikawa, Masahito
Materials Science Forum, 389-393, p.1037 - 1040, 2002/00
Times Cited Count：3 Percentile：15.90(Materials Science, Multidisciplinary)no abstracts in English
Mizuochi, Norikazu*; Isoya, Junichi*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi
Materials Science Forum, 389-393, p.497 - 500, 2002/00
Times Cited Count：3 Percentile：15.90(Materials Science, Multidisciplinary)The spin triplet (S=1) single silicon vacancy relared defects in electron irradiated (3MeV 4
10
e/cm
, room temperature) n-type 4H- and p-type 6H-SiC were studied by electron paramagnetic resonance (EPR) spectroscopy. By laser irradiation, the hyperfine couplings (HFC) with nearest-neighbor (NN) atoms of T
were observed. As a result of detailed analysis, T was unambiguously assigned to be the single silicon vacancy.
interfaces by optical and electrical measurementsIshida, Yuki*; Takahashi, Tetsuo*; Okumura, Hajime*; Jikimoto, Tamotsu*; Tsuchida, Hidekazu*; Yoshikawa, Masahito; Tomioka, Yuichi*; Midorikawa, Masahiko*; Hijikata, Yasuto*; Yoshida, Sadafumi*
Materials Science Forum, 389-393, p.1013 - 1016, 2002/00
Times Cited Count：5 Percentile：23.66(Materials Science, Multidisciplinary)no abstracts in English
Tomioka, Yuichi*; Iida, Takeshi*; Midorikawa, Masahiko*; Tsukada, Hiroyuki*; Yoshimoto, Kimihiro*; Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Ishida, Yuki*; Kosugi, Ryoji*; et al.
Materials Science Forum, 389-393, p.1029 - 1032, 2002/00
Times Cited Count：4 Percentile：20.01(Materials Science, Multidisciplinary)no abstracts in English
