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Journal Articles

Peak degradation of heavy-ion induced transient currents in 6H-SiC MOS capacitor

Makino, Takahiro; Iwamoto, Naoya*; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Nozaki, Shinji*

Materials Science Forum, 717-720, p.469 - 472, 2012/05

 Times Cited Count:1 Percentile:60.76

The peak amplitude of ion induced transient current in n-type 6H-SiC MOS capacitors decreased as the number of incident ions increased and the decrease was recovered to the initial value by applying a positive bias at +1 V. In addition, we monitored a change in the capacitance for the MOS capacitors during ion irradiation. The capacitances increase as the number of incident ion increase. Thus, the result obtained in this study indicates that the depletion layer decreased as the increasing number of incident ions and saturated. Since the number of incident ions at the peak current saturation corresponds to the saturation of the capacitance, we can conclude that the decrease in peak current comes from the decrease in the depletion layer. In addition, the generation of electron-hole pairs by incident ion may result in the formation of an inversion layer. This would have the effect of shielding the charge carriers from the applied bias further reducing the depletion layer width.

Journal Articles

Defects in an electron-irradiated 6H-SiC diode studied by alpha particle induced charge transient spectroscopy; Their impact on the degraded charge collection efficiency

Iwamoto, Naoya*; Koizumi, Atsushi*; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Uchida, Kazuo*; Nozaki, Shinji*

Materials Science Forum, 717-720, p.267 - 270, 2012/05

 Times Cited Count:1 Percentile:60.76

In this study, we carried out an attempt to identify the defects responsible for the degraded charge collection efficiency of the 6H-SiC p$$^{+}$$n diode irradiated with 1 MeV electrons by the alpha particle induced charge transient spectroscopy. To form defects in the SiC crystal, one of the diodes was irradiated with 1 MeV electrons at a fluence of 1$$times$$10$$^{15}$$ /cm$$^{2}$$. Collected charges of the diodes were measured in room temperature using 5.486 MeV alpha particles from $$^{241}$$Am source. After the electron irradiation, the collected charge of the diode at a reverse bias of 100 V decreased to 84% of its initial value. In order to investigate the relationship between degradation of collected charge and defects in detail, time-dependent collected charges of the diodes were measured in temperature ranges from 170 K to 310 K. As a result, two distinct peaks labeled X$$_{1}$$ and X$$_{2}$$ are found for the electron-irradiated diode, and their activation energies are estimated to be 0.30 and 0.47 eV, respectively. These two peaks are considered to correspond to the defect levels introduced by the electron irradiation. In particular, when the diodes are used in room temperature, X$$_{2}$$ is more critical to the charge collection than X$$_{1}$$.

Journal Articles

Electrically Detected Magnetic Resonance (EDMR) studies of SiC-SiO$$_{2}$$ interfaces

Umeda, Takahide*; Kosugi, Ryoji*; Fukuda, Kenji*; Morishita, Norio*; Oshima, Takeshi; Ezaki, Kana*; Isoya, Junichi*

Materials Science Forum, 717-720, p.427 - 432, 2012/05

 Times Cited Count:6 Percentile:95.52

Metal-Oxide (SiO$$_{2}$$)-Semiconductor (MOS) structures fabricated on Silicon Carbide (SiC) were studied using Electrically Detected Magnetic Resonance technique (EDMR). The residual Carbons are expected to be near the interface between SiC and SiC-SiO$$_{2}$$SiO$$_{2}$$, which is different from Si-SiO$$_{2}$$ interface. By the EDMR measurements at 50K, a defect center related to C dangling bonds which is called P$$_{H1}$$ center and also a center related to C dangling bonds terminated by hydrogens or nitrogens (Ns) which is called P$$_{H1}$$ were observed. In addition, a center related to N donor which is called Nh exist near the interface from N-treatment samples. This suggests that carrier concentration increases near the interface due to the introduction of donors, and as a result, the channel conductance increases.

Journal Articles

Local thermal expansion and the C-C stretch vibration of the dicarbon antisite in 4H SiC

Devaty, R. P.*; Yan, F.*; Choyke, W. J.*; Gali, A.*; Kimoto, Tsunenobu*; Oshima, Takeshi

Materials Science Forum, 717-720, p.263 - 266, 2012/05

 Times Cited Count:1 Percentile:60.76

Journal Articles

Synchrotron radiation photoelectron spectroscopy study of thermally grown oxides on 4H-SiC(0001) Si-face and (000-1) C-face substrates

Watanabe, Heiji*; Hosoi, Takuji*; Kirino, Takashi*; Uenishi, Yusuke*; Chanthaphan, A.*; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; et al.

Materials Science Forum, 717-720, p.697 - 702, 2012/05

 Times Cited Count:2 Percentile:79.2

Journal Articles

Impact of interface defect passivation on conduction band offset at SiO$$_{2}$$/4H-SiC interface

Hosoi, Takuji*; Kirino, Takashi*; Chanthaphan, A.*; Uenishi, Yusuke*; Ikeguchi, Daisuke*; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; et al.

Materials Science Forum, 717-720, p.721 - 724, 2012/05

 Times Cited Count:4 Percentile:91.47

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