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p diodesOnoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Hishiki, Shigeomi; Iwamoto, Naoya; Kojima, Kazutoshi*; Kawano, Katsuyasu*
Materials Science Forum, 600-603, p.1039 - 1042, 2009/00
no abstracts in English
Iwamoto, Naoya; Onoda, Shinobu; Hishiki, Shigeomi; Oshima, Takeshi; Murakami, Makoto*; Nakano, Itsuo*; Kawano, Katsuyasu*
Materials Science Forum, 600-603(Part 2), p.1043 - 1046, 2009/00
The 6H-SiC n
p diodes were fabricated on a p-type substrate. To clarify the radiation resistance of the device performance, the diodes were irradiated with 1MeV-electrons at fluence up to 6
10
/cm
and the Charge Collection Efficiencies (CCEs) and diffusion length (L) of minority carriers were evaluated from the evaluation of the Transient Ion Beam Induced Current (TIBIC). The saturated CCE of 93% was obtained for non-electron irradiated diodes, and the value of CCE was kept up to electron fluences of 110
/cm, although L decreased to 0.6
m from 2.5m by the irradiation. The degradation of CCE was observed at fluences above 510/cm.
Hishiki, Shigeomi; Iwamoto, Naoya; Oshima, Takeshi; Ito, Hisayoshi; Kojima, Kazutoshi*; Kawano, Katsuyasu*
Materials Science Forum, 600-603, p.707 - 710, 2009/00
The n-channel 6H-SiC MOSFETs were fabricated using different process. The carbon-coated MOSFETs showed higher radiation resistance than non-coated ones. The generation of interface traps for carbon-coated MOSFETs was smaller than that for non-coated MOSFETs. This origin can be interptered in terms of the surface degradation by thermal annealing process after ion implantation.
-type 4
-SiCUmeda, Takahide*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*
Materials Science Forum, 600-603, p.409 - 412, 2009/00
We have performed photo-electron paramagnetic resonance (photo-EPR) analyses on four types of fundamental vacancy-related defects in 3MeV electron-irradiated 4-SiC, i.e., carbon vacancies 
), silicon vacancies (
-type 
), divacancies 
), and carbon antisite-vacancy pairs (C). The photo-induced transitions from their -2 to -1 charged states or from their -1 charged to neutral states were detected in the photon energy range between 0.80 and 1.20 eV. Based on these transitions, we have discussed positions of their defect levels with respect to the conduction band edge.
-raysHishiki, Shigeomi; Reshanov, S. A.*; Oshima, Takeshi; Ito, Hisayoshi; Pensl, G.*
Materials Science Forum, 600-603, p.703 - 706, 2009/00
Times Cited Count：1 Percentile：46.32(Materials Science, Ceramics)N-channel 6H-SiC MOSFETs has been investigated radiation effect. The MOSFETs were irradiated by -rays up to 3.16 MGy(SiO
) at room temperature. The electrical characteristic was estimated by Hall effect measurement and current vs. voltage measurement. The -rays irradiated MOSFETs were observed that channel mobility increased due to decrease interface traps.
