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Journal Articles

C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance

Umeda, Takahide*; Okamoto, Mitsuo*; Arai, Ryo*; Sato, Yoshihiro*; Kosugi, Ryoji*; Harada, Shinsuke*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi

Materials Science Forum, 778-780, p.414 - 417, 2014/02

 Times Cited Count:2 Percentile:78.54

Interface defects of Metal-Oxide-Semiconductors (MOSFETs) fabricated on Carbone (C) face 4H-SiC were investigated by Electrically Detected Magnet Resistance (EDMR). Gate oxide of the MOSFETs was formed by either wet-oxidation and H$$_{2}$$ annealing or dry-oxidation. The values of channel mobility for MOSFETS with wet gate oxide and dry gate oxide are less than 1 and 90 cm$$^{2}$$/Vs, respectively. By EDMR measurement under low temperature (less than 20 K), EDMR signals related to C were detected. The peak height of the signals increased with increasing $$gamma$$-ray doses, and the channel mobility decreased. From this result, it is assumed that hydrogen atoms passivating C dangling bonds are released by $$gamma$$-rays and the channel mobility decreases with increasing the C related defects.

Journal Articles

Radiation-induced currents in 4H-SiC dosimeters for real-time $$gamma$$-ray dose rate monitoring

Fujita, Natsuko; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi

Materials Science Forum, 778-780, p.1042 - 1045, 2014/02

 Times Cited Count:1 Percentile:60.31

A Silicon Carbide (SiC) dosimeter has been exposed to $$gamma$$-rays emitted from a $$^{60}$$Co source in order to test the response of radiation-induced current in the dose rate ranging from 0.4 Gy/h to 4 kGy/h. The SiC dosimeter in this study is a high purity semi-insulating 4H-SiC with nickel and aluminum electrode. The radiation-induced currents in the dosimeter show a linear relationship with the dose rate, and are repeatable and stable.

Journal Articles

Temperature dependence of electric conductivities in femtosecond laser modified areas in silicon carbide

Deki, Manato*; Oka, Tomoki*; Takayoshi, Shodai*; Naoi, Yoshiki*; Makino, Takahiro; Oshima, Takeshi; Tomita, Takuro*

Materials Science Forum, 778-780, p.661 - 664, 2014/02

 Times Cited Count:2 Percentile:78.54

no abstracts in English

Journal Articles

Defect levels in high purity semi-insulating 4H-SiC studied by alpha particle induced charge transient spectroscopy

Iwamoto, Naoya; Onoda, Shinobu; Fujita, Natsuko; Makino, Takahiro; Oshima, Takeshi

Materials Science Forum, 778-780, p.289 - 292, 2014/02

 Times Cited Count:0 Percentile:0.32

Journal Articles

Single event gate rupture in SiC MOS capacitors with different gate oxide thicknesses

Deki, Manato*; Makino, Takahiro; Kojima, Kazutoshi*; Tomita, Takuro*; Oshima, Takeshi

Materials Science Forum, 778-780, p.440 - 443, 2014/02

 Times Cited Count:1 Percentile:60.31

no abstracts in English

Journal Articles

Annealing of electron irradiated, thick, ultrapure 4H SiC between 1100$$^{circ}$$C and 1500$$^{circ}$$C and measurements of lifetime and photoluminescence

Klahold, W. M.*; Devaty, R. P.*; Choyke, W. J.*; Kawahara, Kotaro*; Kimoto, Tsunenobu*; Oshima, Takeshi

Materials Science Forum, 778-780, p.273 - 276, 2014/02

Journal Articles

Impact of carrier lifetime on efficiency of photolytic hydrogen generation by p-type SiC

Miyake, Keiko*; Yasuda, Tomonari*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

Materials Science Forum, 778-780, p.503 - 506, 2014/02

Journal Articles

Identification of structures of the deep levels in 4H-SiC

Nakane, Hiroki*; Kato, Masashi*; Ichimura, Masaya*; Oshima, Takeshi

Materials Science Forum, 778-780, p.277 - 280, 2014/02

Oral presentation

The Carbon vacancy in SiC

Son, N. T.*; Trinh, X. T.*; Suda, Jun*; Kimoto, Tsunenobu*; L${o}$vile, L. S.*; Svensson, B. G.*; Szasz, K.*; Hornos, T.*; Gali, A.*; Umeda, Takahide*; et al.

no journal, , 

no abstracts in English

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