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Journal Articles

Structure evolution and corresponding electrical properties in weakly bound Co-C60 mixture

Sakai, Seiji; Naramoto, Hiroshi; Xu, Y.; Priyanto, T. H.; Lavrentiev, V.; Narumi, Kazumasa

Materials Research Society Symposium Proceedings, Vol.788, p.L11.49.1 - L11.49.6, 2004/00

Mixture films between cobalt and C$$_{60}$$ (CoxC$$_{60}$$, x = 0.5-700) were prepared by co-evaporation technique under UHV conditions. The composition-dependent features of dilatation and downshift of Raman peak suggest that the mixtures are composed of cobalt particles and a C$$_{60}$$-based phase in which certain number of cobalt atoms are coordinated with C$$_{60}$$ molecules. It is deduced that the equilibrated number of cobalt atoms in the C$$_{60}$$-based phase is 4 atoms per C$$_{60}$$ molecule and in which an electron transfer occurs from a cobalt atom to a C$$_{60}$$ molecule. The evaluation of their temperature dependences reveals that: (1) The mixtures with x $$leq$$ 4 are thermally activated-type, and their conductive nature can be attributed to the C$$_{60}$$-based phase. Further (2) the mixtures between 4 $$<$$ x $$<$$ 60 are also thermally activated, however, the electron hopping process between the isolated cobalt particles is supposed to be operative (variable-range-hopping). And (3) in the mixtures with x $$geq$$ 60 which corresponds to a percolation threshold for cobalt particles, the system changes into metallic conduction.

Journal Articles

Effects of high-energy ion irradiation in bismuth thin films at low temperature

Chimi, Yasuhiro; Ishikawa, Norito; Iwase, Akihiro*

Materials Research Society Symposium Proceedings, Vol.792, p.379 - 384, 2004/00

We have studied high-energy ion irradiation effects in bismuth by measuring the electrical resistivity at low temperature in relation to its structural change. Bismuth thin films (300-600 $AA  thick) are irradiated below $sim$$10 K with several kinds of energetic (100-200 MeV) heavy ions. The resistivity of the specimen is measured in-situ at $$sim$$7 K during irradiation. After irradiation, annealing behavior of the resistivity is observed up to $$sim$$35 K. The temperature dependence of the resistivity during annealing shows an abrupt increase around 20 K, implying re-crystallization of irradiation-induced amorphous region. Since amorphous bismuth also shows a superconducting transition below $$sim$$6 K, high-density electronic excitation due to energetic heavy-ion irradiation may induce columnar region of superconducting amorphous bismuth in normal crystalline bismuth. We are trying to detect the superconducting transition as a result of irradiation-induced amorphization.

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