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Journal Articles

Muon-induced SEU analysis and simulation for different cell types in 12-nm FinFET SRAMs, and 28-nm planar SRAMs and register files

Gomi, Yuibi*; Takami, Kazusa*; Mizuno, Rurie*; Niikura, Megumi*; Yasuda, Ryuichi*; Deng, Y.*; Kawase, Shoichiro*; Watanabe, Yukinobu*; Abe, Shinichiro; Liao, W.*; et al.

IEEE Transactions on Nuclear Science, 72(8), p.2751 - 2762, 2025/08

 Times Cited Count:4 Percentile:65.74(Engineering, Electrical & Electronic)

The study of muon-induced soft errors in terrestrial settings remains underexplored even though the incidence of muon-induced soft errors tends to increas. In this study, we conducted positive and negative muon irradiation experiments on four types of 12-nm FinFET SRAMs. At the momentum where the SEU cross section peaks, 2-fin cells exhibit larger SEU cross sections than 1-fin cells for negative muons. Conversely, for positive muons, the SEU cross section is larger in 1-fin cells than in 2-fin cells due to the increased diffusion capacitance in 2-fin cells. We also performed the Monte Carlo simulations. The results suggest that a single sensitive volume with the same critical charge value cannot consistently reproduce the SEU cross sections for both types of muons.

Journal Articles

Validating terrestrial SER in 12-, 28-, and 65-nm SRAMs estimated by simulation coupled with one-time neutron irradiation

Takami, Kazusa*; Gomi, Yuibi*; Yasuda, Ryuichi*; Abe, Shinichiro; Ito, Masatoshi*; Kanda, Hiroki*; Fukuda, Mitsuhiro*; Hashimoto, Masanori*

IEEE Transactions on Nuclear Science, 72(8), p.2622 - 2628, 2025/08

 Times Cited Count:4 Percentile:65.74(Engineering, Electrical & Electronic)

Neutron-induced soft errors in the terrestrial environment pose reliability issues for semiconductor devices. We have developed the new method for estimating terrestrial SER based on simulation coupled with one-time irradiation using a conventional neutron source. This method has been validated using 65-nm planar SRAMs. However, with the ongoing progression of process shrinkage and the increasing adoption of devices fabricated with newer processes, there is a growing demand for further experimental validation of the terrestrial SER estimation method for these advanced processes. In this work, we validated the estimation method for 12-nm 1-fin FinFETs and 28-nm planer SRAMs. The SERs estimated by our method were consistent with the SERs measured using a white neutron beam at RCNP within 28% error.

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