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Imaizumi, Mitsuru*; Oshima, Takeshi
Proceedings of SPIE, Vol.8725 (CD-ROM), 8 Pages, 2013/06
Times Cited Count：5 Percentile：90.61Radiation effects in solar cells are described. Degradation behavior of space solar cells, such as silicon solar cells and InGaP/GaAs/Ge triple-junction solar cells, due to high-energy electrons and protons are elaborated in the presentation. Space solar cell design technology is also explained. In addition, technologies for practical application of solar cells in space including methodology for radiation protection and degradation prediction are interpreted. Furthermore, recent development status of state-of-the-art space solar cells is introduced.
Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Nozaki, Shinji*
Proceedings of SPIE, Vol.8725 (CD-ROM), 8 Pages, 2013/06
Times Cited Count：0 Percentile：0.01Sato, Shinichiro; Oshima, Takeshi
Proceedings of SPIE, Vol.8725 (CD-ROM), 8 Pages, 2013/05
Times Cited Count：0 Percentile：0.01The dominant electronic conduction mechanism of hydrogenated amorphous silicon thin films changes from the band transport to the hopping transport due to ion irradiation. Dark conductivity (DC) and photoconductivity (PC) variations as a function of 100 keV proton fluence, and variations of temperature dependence of DC due to 100 keV proton irradiation are investigated. The decrease in DC and PC due to reduction of the band transport is observed at the fluence of less than 10
cm
, and the drastic increase in DC and the loss of photoconduction due to enhancement of the hopping transport are observed in the high fluence regime. However, the hopping transport easily disappears at above 300 K and after that, the band transport dominates the electric conduction again. The conductivity based on the band transport after irradiation is not completely restored even after thermal annealing, indicating that thermally stable dangling bonds remain.
Ito, Hisayoshi
Proceedings of SPIE, Vol.8725 (CD-ROM), 7 Pages, 2013/05
Times Cited Count：0 Percentile：0.01Research and development of radiation resistant semiconductor devices have been performed at Japan Atomic Energy Agency (JAEA) for their application to electronic system used in harsh environments like space, accelerator and nuclear facilities. Such devices are also indispensable for robots and equipment necessary for decommissioning of the damaged reactors at Fukushima Daiichi Nuclear Power Plants. For this purpose, we have fabricated transistors based on a wide band-gap semiconductor SiC and examined their radiation degradation. As a result, SiC-based transistors exhibited no significant degradation up to 1MGy, indicating their excellent radiation resistance. Recent our R&Ds of radiation resistant devices based on SiC are summarized and reviewed.
