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Abderrahmane, A.*; Takahashi, Hiroki*; Tashiro, Tatsuya*; Ko, P. J.*; Okada, Hiroshi*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*
AIP Conference Proceedings 1585, p.123 - 127, 2014/02
Times Cited Count:1 Percentile:50.83(Physics, Applied)The effect of annealing at 673 K on irradiated micro-Hall sensors irradiated with protons at 380 keV and fluences of 1 cm
, 1
cm
, 1
cm
is reported. Cathodoluminescence measurements were carried out at room temperature before and after annealing and showed improvement in the band edge band emission of the GaN layer. After annealing a sensor irradiated by 1
cm
the device became operational with improvements in its magnetic sensitivity. All irradiated sensors showed improvement in their electrical characteristics after annealing.